SIZ728DT-T1-GE3

SiZ728DT Vishay Siliconix N-Channel 25 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.) 8.1 nC 20.5 nC PowerPAIR® 6 x 3.7 Pin 1 G1 1 D1 2 D1 3.73 mm • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • System Power - Notebook - Server • POL • Synchronous Buck Converter D1 D1 3 G1 S1/D2 (Pin 7) G2 6 S2 5 S2 N-Channel 1 MOSFET 6 mm 4 S1/D2 G2 Ordering Information: SiZ728DT-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Channel-1 Unit V 16a 35a 16a 35a a, b, c 28.8b, c 23b, c 100 16 14.2b, c 70 16a 3.2b, c 18 16 27 17 35a 3.8b, c 30 45 48 31 3.9b, c 2.5b, c 4.6b, c 3b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 25 ± 20 A mJ W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Junction-to-Ambientb, f t  10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 24 3.5 32 4.6 20 2 27 2.6 Unit Maximum °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 25 VGS = 0 V, ID = 250 µA Ch-2 25 ID = 250 µA Ch-1 ID = 250 µA Ch-2 25 ID = 250 µA Ch-1 -5 V 34 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 2.2 VDS = VGS, ID = 250 µA Ch-2 1 2.2 - 5.4 Ch-1 ± 100 Ch-2 ± 100 VDS = 25 V, VGS = 0 V Ch-1 1 VDS = 25 V, VGS = 0 V Ch-2 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 15 VDS 5 V, VGS = 10 V Ch-2 20 VDS = 0 V, VGS = ± 20 V V nA µA 5 A VGS = 10 V, ID = 18 A Ch-1 0.0063 0.0077 VGS = 10 V, ID = 20 A Ch-2 0.0029 0.0035 VGS = 4.5 V, ID = 15 A Ch-1 0.0088 0.0110 VGS = 4.5 V, ID = 20 A Ch-2 0.0039 0.0048 VDS = 15 V, ID =18 A Ch-1 37 VDS = 15 V, ID = 20 A Ch-2 80  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Crss Qg Channel-1 VDS = 12.5 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 12.5 V, VGS = 0 V, f = 1 MHz Rg 890 Ch-2 2360 Ch-1 230 Ch-2 580 Ch-1 105 Ch-2 260 pF VDS = 12.5 V, VGS = 10 V, ID = 15 A Ch-1 17 VDS = 12.5 V, VGS = 10 V, ID = 20 A Ch-2 42.5 64 Ch-1 8.1 13 Channel-1 VDS = 12.5 V, VGS = 4.5 V, ID = 15 A Ch-2 20.5 17 Ch-1 3 Channel-2 VDS = 12.5 V, VGS = 4.5 V, ID = 20 A Ch-2 7.7 Ch-1 2.5 Qgs Qgd Ch-1 Ch-2 f = 1 MHz 26 nC 6.4 Ch-1 0.2 1 2 Ch-2 0.2 0.8 1.6  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 12 25 Ch-2 20 40 Ch-1 15 30 Ch-2 18 35 Ch-1 15 30 Ch-2 30 60 Ch-1 10 20 Ch-2 10 20 Ch-1 7 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 12.5 V, RL = 1.25  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 12.5 V, RL = 1.25  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Ch-2 10 20 Ch-1 12 25 Ch-2 12 25 Ch-1 25 50 Ch-2 30 60 Ch-1 10 20 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD Ch-1 16 Ch-2 35 Ch-1 70 Ch-2 100 IS = 10 A, VGS = 0 V Ch-1 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 0.78 1.2 Ch-1 12 25 Ch-2 25 50 trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A Ch-1 4 8 Ch-2 15 30 Ch-1 6.6 Ch-2 12.5 Ch-1 5.5 Ch-2 12.5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 70 VGS = 10 V thru 5 V 60 16 50 ID - Drain Current (A) ID - Drain Current (A) VGS = 4 V 40 30 20 12 TC = 25 °C 8 TC = 125 °C 4 VGS = 3 V 10 TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0160 1200 0.0140 1000 3.5 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 0.0120 VGS = 4.5 V 0.0100 0.0080 800 600 400 Coss VGS = 10 V Crss 0.0060 200 0.0040 0 0 10 20 30 40 50 60 70 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 25 1.6 ID = 20 A 8 1.4 6 VDS = 15 V VDS = 24 V 4 VGS = 10 V ID = 18 A VDS = 7.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 0 2 VGS = 4.5 V 1.2 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 18 A 0.025 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.020 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 50 2.0 40 Power (W) VGS(th) (V) 1.8 1.6 ID = 250 μA 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 1000 ID - Drain Current (A) 100 Limited by RDS(on)* 10 100 μs 1 10 ms 1 ms 0.1 100 ms 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix 60 30 50 25 40 20 Power (W) ID - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 20 15 10 Package Limited 5 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 100 VGS = 10 V thru 4 V 16 60 ID - Drain Current (A) ID - Drain Current (A) 80 VGS = 3 V 40 TC = 25 °C 12 8 TC = 125 °C 20 4 0 0 TC = - 55 °C 0.5 1.0 1.5 0.0 2.0 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0050 3500 0.0045 3000 VGS = 4.5 V 0.0040 0.0035 0.0030 VGS = 10 V 0.0025 3.0 Ciss 2500 2000 1500 1000 Coss Crss 500 0.0020 0 0 20 40 80 60 5 0 100 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 25 1.8 10 ID = 20 A VDS = 7.5 V ID = 20 A 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 0.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 6 VDS = 15 V VDS = 24 V 4 2 VGS = 4.5 V, 10 V 1.4 1.2 1.0 0.8 0 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 40 50 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.010 100 TJ = 150 °C ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.008 10 TJ = 25 °C 1 0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source 2.0 50 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 1.2 30 20 1.0 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 0.1 100 ms 1s 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix 100 50 80 40 60 30 Power (W) ID - Drain Current (A) CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Package Limited 40 20 10 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ728DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67694. Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE A D 0.10 C 2X Pin 5 K2 K2 Pin 4 Pin 4 Pin 5 Pin 6 K L Pin 6 E E1 D1 K1 Pin #1 Ident (Optional) Pin 1 Pin 2 0.10 C Pin 3 Pin 2 Pin 3 2X E2 D1 Pin 1 e b BACK SIDE VIEW b1 C A1 C A 0.08 c 0.10 C Z Z MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.65 3.73 3.81 0.144 0.147 0.150 D1 2.41 2.53 2.65 0.095 0.100 0.104 E 5.92 6.00 6.08 0.233 0.236 0.239 E1 2.62 2.67 2.72 0.103 0.105 0.107 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.05 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. K2 L 0.60 TYP. 0.38 0.43 0.024 TYP. 0.48 0.015 0.017 0.019 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 Document Number: 69028 17-Nov-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0, 0.03 0.1070 (2.718) 0.1040 (2.642) 0.4390 (11.151) 0, 0 0.0220 (0.559) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 1 0.0500 (1.27) Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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