SIZ790DT-T1-GE3

SiZ790DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V 35a PowerPAIR® G1 1 D1 2 D1 17 nC • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFETs and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS D1 • System Power - Notebook - Server • POL • Synchronous Buck Converter 3.73 mm D1 3 G1 N-Channel 1 MOSFET S1/D2 Pin 7 G2 S2 5 7.7 nC 6 x 3.7 Pin 1 6 Qg (Typ.) S2 S1/D2 Schottky Diode G2 6 mm N-Channel 2 MOSFET 4 S2 Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Unit V a 16 16a 35 35a 12.9b, c 10.3b, c 70 16a 23.4b, c 18.7b, c 100 3.2 16 13 27 17 35a 3.8b, c 30 45 48 31 3.9b, c 2.5b, c 4.6b, c 3b, c b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 30 ± 20 a IDM Pulsed Drain Current (t = 300 µs) Channel-1 A mJ W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Junction-to-Ambientb, f t  10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 24 3.5 32 4.6 20 2 27 2.6 Unit Maximum °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 VDS = VGS, ID = 250 µA Ch-1 1 VDS = VGS, ID = 250 µA Ch-2 1.1 VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs 2.2 V 2.2 Ch-1 ± 100 Ch-2 ± 100 Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 15 VDS 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 15 A Ch-1 0.0075 0.0093 VGS = 10 V, ID = 20 A Ch-2 0.0038 0.0047 VGS = 4.5 V, ID = 13 A Ch-1 0.0105 0.0130 VGS = 4.5 V, ID = 20 A Ch-2 0.0048 0.0059 VDS = 15 V, ID = 15 A Ch-1 48 VDS = 15 V, ID = 20 A Ch-2 85 50 200 5 140 nA µA 1400 A  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 15 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg VDS = 15 V, VGS = 10 V, ID = 20 A Rg 830 Ch-2 1980 Ch-1 185 Ch-2 455 Ch-1 80 Ch-2 165 Ch-1 15.6 24 Ch-2 36 54 7.7 12 26 Ch-2 17 Ch-1 2.6 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 5.7 Ch-1 3 Ch-2 f = 1 MHz pF Ch-1 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Qgs Qgd Ch-1 nC 5 Ch-1 0.2 1 2 Ch-2 0.2 0.9 1.8  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 10 20 Ch-2 20 40 Ch-1 15 30 Ch-2 15 30 Ch-1 15 30 Ch-2 25 50 Ch-1 7 15 Ch-2 10 20 Ch-1 5 10 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Ch-2 10 20 Ch-1 15 30 Ch-2 10 20 Ch-1 17 35 Ch-2 25 50 Ch-1 7 15 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD Ch-1 16 Ch-2 35 Ch-1 70 Ch-2 100 IS = 10 A, VGS = 0 V Ch-1 0.8 1.2 IS = 2 A, VGS = 0 V Ch-2 0.38 0.48 Ch-1 15 30 Ch-2 20 40 Ch-1 6 12 Ch-2 15 32 trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A Ch-1 9 Ch-2 10.5 Ch-1 6 Ch-2 9.5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 20 VGS = 10 V thru 4 V 60 50 ID - Drain Current (A) ID - Drain Current (A) 16 40 30 VGS = 3 V 20 12 TC = 25 °C 8 TC = 125 °C 4 10 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 2.5 3.0 25 30 1200 1000 C - Capacitance (pF) 0.012 RDS(on) - On-Resistance (Ω) TC = - 55 °C 0 VGS = 4.5 V 0.010 VGS = 10 V 0.008 0.006 Ciss 800 600 400 Coss 200 Crss 0.004 0 0 10 20 30 40 50 60 0 70 5 10 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 1.8 ID = 15.2 A 1.6 6 VDS = 15 V VDS = 24 V 4 VGS = 10 V ID = 15 A VDS = 7.5 V 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 VGS = 4.5 V 1.4 1.2 1.0 2 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID = 15 A 0.025 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.020 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.0 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 1.2 20 10 1.0 0.8 - 50 30 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 1000 ID - Drain Current (A) 100 Limited by RDS(on)* 10 100 μs 1 ms 1 0.1 10 ms 100 ms 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 30 25 20 30 Power (W) ID - Drain Current (A) 40 20 15 10 Package Limited 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 100 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 VGS = 3 V 60 40 12 TC = 25 °C 8 20 4 0 0 TC = 125 °C TC = - 55 °C 0.0 0.5 1.0 1.5 0.0 2.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 25 30 2500 Ciss 0.0055 2000 0.0050 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 VDS - Drain-to-Source Voltage (V) 0.0060 VGS = 4.5 V 0.0045 VGS = 10 V 0.0040 1500 1000 Coss 500 0.0035 Crss 0 0.0030 0 40 20 80 60 0 100 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 20 A VDS = 7.5 V ID = 20 A VGS = 10 V 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 0.5 6 VDS = 15 V VDS = 24 V 4 1.4 VGS = 4.5 V 1.2 1.0 2 0.8 0 0 www.vishay.com 8 10 20 30 40 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.010 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.008 TJ = 125 °C 0.006 0.004 TJ = 25 °C 0.002 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source 1.E-01 10 50 1.E-02 VR = 30 V 1.E-03 40 VR = 20 V Power (W) IR - Reverse Current (A) 2 VSD - Source-to-Drain Voltage (V) 1.E-04 1.E-05 30 20 1.E-06 10 VR = 10 V 1.E-07 1.E-08 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Reverse Current vs. Junction Temperature Single Pulse Power 1000 ID - Drain Current (A) 100 Limited by RDS(on)* 100 μs 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix 100 50 80 40 60 30 Power (W) ID - Drain Current (A) CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Package Limited 40 20 20 10 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 4. Surface Mounted 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67669. Document Number: 67669 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE A D 0.10 C 2X Pin 5 K2 K2 Pin 4 Pin 4 Pin 5 Pin 6 K L Pin 6 E E1 D1 K1 Pin #1 Ident (Optional) Pin 1 Pin 2 0.10 C Pin 3 Pin 2 Pin 3 2X E2 D1 Pin 1 e b BACK SIDE VIEW b1 C A1 C A 0.08 c 0.10 C Z Z MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.65 3.73 3.81 0.144 0.147 0.150 D1 2.41 2.53 2.65 0.095 0.100 0.104 E 5.92 6.00 6.08 0.233 0.236 0.239 E1 2.62 2.67 2.72 0.103 0.105 0.107 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.05 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. K2 L 0.60 TYP. 0.38 0.43 0.024 TYP. 0.48 0.015 0.017 0.019 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 Document Number: 69028 17-Nov-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0, 0.03 0.1070 (2.718) 0.1040 (2.642) 0.4390 (11.151) 0, 0 0.0220 (0.559) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 1 0.0500 (1.27) Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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