SIZ900DT-T1-GE3

SiZ900DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.) 13.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS 34 nC • Notebook System Power • POL • Synchronous Buck Converter D1 PowerPAIR® 6 x 5 Pin 1 G1 2 D1 G1 D1 N-Channel 1 MOSFET D1 3 4 G2 S2 7 S1/D2 S1/D2 Pin 9 S2 8 5 mm D1 1 G2 6 mm S2 6 5 N-Channel 2 MOSFET Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Unit V a 24 24a 28 28a 19b, c 15.5b, c 90 24a 28b, c 22b, c 110 3.8b, c 20 20 48 31 28a 4.3b, c 35 61 100 64 4.6b, c 3b, c 5.2b, c 3.3b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 30 ± 20 a IDM Pulsed Drain Current Channel-1 - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f t  10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 22 2.1 27 2.6 19 1 24 1.25 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2. Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 ID = 250 µA Ch-2 32 ID = 250 µA Ch-1 -6 V 32 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1.2 2.4 VDS = VGS, ID = 250 µA Ch-2 1 2.2 - 6.5 Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 25 VDS = 0 V, VGS = ± 20 V V nA µA 5 A VGS = 10 V, ID = 19.4 A Ch-1 0.0059 0.0072 VGS = 10 V, ID = 20 A Ch-2 0.0032 0.0039 VGS = 4.5 V, ID = 17.2 A Ch-1 0.0075 0.0092 0.0038 0.0047 VGS = 4.5 V, ID = 20 A Ch-2 VDS = 10 V, ID = 19.4 A Ch-1 76 VDS = 10 V, ID = 20 A Ch-2 120 Ch-1 1830 Ch-2 4900 Ch-1 300 Ch-2 710 Ch-1 120 Ch-2 280  S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 19.4 A Ch-1 29 45 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 73 110 Ch-1 13.5 21 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 19.4 A Ch-2 34 51 Ch-1 5.8 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 15 Ch-1 3.1 Qgs Qgd Rg pF Ch-2 f = 1 MHz nC 7.3 Ch-1 0.5 2.4 4.8 Ch-2 0.2 0.9 1.8  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 20 40 Ch-2 35 70 Ch-1 10 20 Ch-2 10 20 Ch-1 25 50 Ch-2 35 70 Ch-1 10 20 Ch-2 10 20 Ch-1 15 30 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Ch-2 15 30 Ch-1 10 20 Ch-2 7 15 Ch-1 30 60 Ch-2 40 80 Ch-1 10 20 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD Ch-1 24 Ch-2 28 Ch-1 90 Ch-2 110 IS = 10 A, VGS = 0 V Ch-1 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 16 30 Ch-2 30 60 trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A Ch-1 6 12 Ch-2 21 40 Ch-1 9 Ch-2 17 Ch-1 7 Ch-2 13 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 VGS = 3 V 20 12 TC = 25 °C 8 TC = 125 °C 4 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 2.5 3.0 25 30 2500 0.009 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0.008 VGS = 4.5 V 0.007 0.006 VGS = 10 V Ciss 1500 1000 500 0.005 Coss Crss 0.004 0 0 20 40 60 0 80 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 VDS = 7.5 V ID = 18.8 A 8 RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 6 VDS = 15 V VDS = 24 V 4 2 0 0 6 12 18 24 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 30 ID = 19.4 A 1.6 1.4 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.018 TJ = 150 °C 10 TJ = 25 °C 1 ID = 19.4 A 0.016 0.014 0.012 TJ = 125 °C 0.010 0.008 0.006 TJ = 25 °C 0.004 0.002 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 2.2 2.0 80 Power (W) VGS(th) (V) 1.8 1.6 ID = 250 μA 1.4 60 40 1.2 20 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 Threshold Voltage Single Pulse Power 100 1000 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 100 ms 1s 10 s TC = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 70 60 Power (W) ID - Drain Current (A) 40 50 40 30 Package Limited 30 20 20 10 10 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = R thJA = 62 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 100 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 60 VGS = 3 V 40 12 TC = 25 °C 8 TC = 125 °C 20 4 0 0 TC = - 55 °C 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 0.0 2.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 0.0050 6000 0.0045 5000 VGS = 4.5 V 0.0040 0.0035 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 3.5 VGS = 10 V 0.0030 0.0025 Ciss 4000 3000 2000 Coss 1000 Crss 0.0020 0 0 20 40 60 80 100 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 20 A VDS = 7.5 V 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 6 VDS = 15 V VDS = 24 V 4 2 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 80 ID = 20 A 1.6 1.4 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.010 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.008 TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 100 2.2 2.0 80 Power (W) VGS(th) (V) 1.8 1.6 ID = 250 μA 1.4 60 40 1.2 20 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 1000 Limited by RDS(on)* ID - Drain Current (A) 100 1 ms 10 10 ms 1 100 ms 1s 10 s TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 140 120 Power (W) ID - Drain Current (A) 80 100 80 60 60 40 40 Package Limited 20 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ900DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 56 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67344. Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 BW Case Outline (for SiZ900DT only) A Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z D 0.10 C 2X E E1 D1 K1 Pin #1 Ident (Optional) 0.10 C Pin 1 Pin 2 Pin 3 Pin 4 Pin 4 2X Pin 3 E2 D1 Pin 2 Pin 1 e TOP SIDE VIEW BACK SIDE VIEW 0.08 C A1 C C A 0.10 A3 b1 F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.20 REF 0.008 REF b 0.51 BSC 0.020 BSC b1 0.25 BSC 0.010 BSC D D1 5.00 BSC 3.75 E 3.80 0.197 BSC 3.85 0.148 6.00 BSC E1 2.62 E2 0.87 e 0.150 0.152 0.236 BSC 2.67 2.72 0.103 0.92 0.97 0.034 1.27 BSC 0.105 0.107 0.036 0.038 0.005 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. L 0.43 BSC 0.017 BSC z 0.34 BSC 0.013 BSC ECN: C11-1247-Rev. D, 31-Oct-11 DWG: 5978 Revision: 31-Oct-11 1 Document Number: 69027 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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