SIZ902DT-T1-GE3

SiZ902DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PowerPAIR® 6 x 5 S2 S2 6 5 G2 S2 8 7 • TrenchFET® power MOSFET • 100 % Rg and UIS tested S1/D2 (Pin 9) • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 D1 6 m m 1 1 2 G 3 D 1 4 D 1 1 D1 Bottom View m 5m Top View APPLICATIONS D1 • Notebook system power • POL PRODUCT SUMMARY CHANNEL-1 CHANNEL-2 30 0.0120 0.0145 6.8 16 30 0.0064 0.0083 21 16 VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration G1 • Synchronous buck converter N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5 SiZ902DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage SYMBOL VDS VGS Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD CHANNEL-1 30 ± 20 16 a 16 a 14.3 b, c 11.4 b, c 50 16 a 3.4 b, c 18 16 29 18 4.2 b, c 2.7 b, c TJ, Tstg CHANNEL-2 30 ± 20 16 a 16 a 16 a, b, c 16 a, b, c 80 16 a 4.1 b, c 30 45 66 42 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. 24 3.4 MAX. 30 4.3 CHANNEL-2 TYP. 20 1.5 MAX. 25 1.9 UNIT t  10 s RthJA Maximum junction-to-ambient °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W for channel-1 and 57 °C/W for channel-2 b, f S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 30 - - Ch-2 30 - - Ch-1 - 33 - Ch-2 - 33 - Ch-1 - -5 - UNIT Static Drain-source breakdown voltage VDS temperature coefficient VDS VGS = 0 V, ID = 250 μA VDS/TJ ID = 250 μA VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage VGS(th)/TJ VGS(th) VDS = VGS, ID = 250 μA IGSS VDS = 0 V, VGS = +20 V VDS = 30 V, VGS = 0 V Zero gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs Ch-2 - -4.6 - Ch-1 1 - 2.2 Ch-2 1 - 2.2 Ch-1 - - ± 100 Ch-2 - - ± 100 Ch-1 - - 1 Ch-2 - - 1 Ch-1 - - 5 Ch-2 - - 5 VDS  5 V, VGS = 10 V Ch-1 20 - - Ch-2 20 - - VGS = 10 V, ID = 13.8 A Ch-1 - 0.0100 0.0120 VGS = 10 V, ID = 20 A Ch-2 - 0.0053 0.0064 VGS = 4.5 V, ID = 12.6 A Ch-1 - 0.0120 0.0145 0.0083 VGS = 4.5 V, ID = 20 A Ch-2 - 0.0068 VDS = 10 V, ID = 13.8 A Ch-1 - 47 - VDS = 10 V, ID = 20 A Ch-2 - 63 - Ch-1 - 790 - Ch-2 - 2600 - Ch-1 - 190 - Ch-2 - 485 - V mV/°C V nA μA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Gate-source charge Gate-drain charge Gate resistance S11-2380 Rev. B, 28-Nov-11 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 - 76 Ch-2 - 215 - VDS = 15 V, VGS = 10 V, ID = 13.8 A Ch-1 - 14 21 65 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 - 43 VDS = 15 V, VGS = 4.5 V, ID = 13.8 A Ch-1 - 6.8 11 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 - 21 32 Qgs Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 13.8 A Ch-1 - 2.6 - Ch-2 - 8.1 - Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 - 1.9 - Ch-2 - 6.5 - Ch-1 0.4 2 - Ch-2 0.3 1.5 - Qg Rg f = 1 MHz pF nC  Document Number: 63465 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 15 30 Ch-2 - 23 50 Ch-1 - 12 20 Ch-2 - 20 40 Ch-1 - 20 40 Ch-2 - 35 70 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 10 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time tf td(on) Rise time Turn-off delay time tr td(off) Fall time tf Channel-1 VDD = 15 V, RL = 1.5 , ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5 , ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5 , ID  10 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5 , ID  10 A, VGEN = 10 V, Rg = 1  Ch-2 - 22 25 Ch-1 - 12 20 Ch-2 - 10 20 Ch-1 - 20 40 Ch-2 - 35 70 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - - 16 Ch-2 - - 16 Ch-1 - - 50 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C tb IS = 10 A, VGS = 0 V Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-2 - - 80 Ch-1 - 0.85 1.2 Ch-2 - 0.8 1.2 Ch-1 - 20 40 Ch-2 - 25 50 Ch-1 - 10 20 Ch-2 - 13 25 Ch-1 - 11 - Ch-2 - 12 - Ch-1 - 9 - Ch-2 - 13 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 %        Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 60 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 3.0 3.5 1200 1000 0.012 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TC = - 55 °C 0 0.0 VGS = 4.5 V 0.010 VGS = 10 V Ciss 800 600 400 Coss 0.008 200 Crss 0.006 0 0 10 20 30 40 50 60 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 1.7 R DS(on) - On-Resistance (Normalized) ID = 13.8 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge S11-2380 Rev. B, 28-Nov-11 15 1.6 ID = 13.8 A 1.5 VGS = 10 V; 4.5 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 - 50 -- 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 63465 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 50 1.9 1.8 1.7 40 1.6 ID = 250 µA Power (W) VGS(th) (V) 1.5 1.4 1.3 1.2 30 20 1.1 10 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* 100 μs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 50 25 20 30 20 Power (W) ID - Drain Current (A) 40 Package Limited 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 12 T = 25 °C 8 20 TC = 125 °C 4 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 2.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics Output Characteristics 3500 0.008 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3000 VGS = 4.5 V 0.007 0.006 VGS = 10 V 0.005 2500 2000 1500 1000 Coss Crss 500 0.004 0 0 20 40 ID - Drain Current (A) 60 80 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1.6 10 RDS(on) - On-Resistance (Normalized) ID = 20 A VDS = 7.5 V VGS - Gate-to-Source Voltage (V) 30 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 9 18 27 36 Qg - Total Gate Charge (nC) Gate Charge S11-2380 Rev. B, 28-Nov-11 45 ID = 20 A VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63465 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.016 100 0.014 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.012 0.010 TJ = 125 °C 0.008 0.006 TJ = 25 °C 0.004 0.002 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 °C 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 100 80 60 Power (W) ID - Drain Current (A) 60 40 20 Package Limited 20 40 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ902DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 57 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63465. S11-2380 Rev. B, 28-Nov-11 Document Number: 63465 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000