SIZ904DT-T1-GE3

SiZ904DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PowerPAIR® 6 x 5 S2 S2 6 5 G2 S2 8 7 • TrenchFET® power MOSFETs • 100 % Rg and UIS tested S1/D2 (Pin 9) D1 6 m m 1 1 2 G 3 D 1 4 D 1 1 D1 Bottom View m 5m Top View APPLICATIONS D1 • Notebook system power • POL PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 CHANNEL-1 CHANNEL-2 30 30 0.0240 0.0135 0.0300 0.0170 3.8 7.3 12 16 Dual G1 • Low current DC/DC N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5 SiZ904DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) ID IDM Source drain current diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg CHANNEL-1 CHANNEL-2 30 30 ± 20 ± 20 12 a 16 a a 12 16 a 9.5 b, c 14.5 b, c 7.6 b, c 11.6 b, c 30 40 12 a 16 a 3.2 b, c 4 b, c 10 15 5 11 20 33 12.9 21 3.8 b, c 4.8 b, c 2.4 b, c 3.1 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 25 4.7 TYP. 20 3 MAX. 33 6.2 MAX. 26 3.8 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2 S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - VDS/TJ ID = 250 μA Ch-1 - 35 - ID = 250 μA Ch-2 - 33 - VGS(th)/TJ ID = 250 μA Ch-1 - -4.5 - VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA Ch-2 - -5 - VDS = VGS, ID = 250 μA Ch-1 1 - 2.5 VDS = VGS, ID = 250 μA Ch-2 1.2 - 2.5 Ch-1 - - ± 100 Ch-2 - - ± 100 VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Ch-1 - - 1 VDS = 30 V, VGS = 0 V Ch-2 - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 5 VDS  5 V, VGS = 10 V Ch-1 20 - - VDS  5 V, VGS = 10 V Ch-2 20 - - VGS = 10 V, ID = 7.8 A Ch-1 - 0.0200 0.0240 VGS = 10 V, ID = 10 A Ch-2 - 0.0105 0.0135 VGS = 4.5 V, ID = 7 A Ch-1 - 0.0240 0.0300 0.0135 0.0170 VGS = 4.5 V, ID = 7 A Ch-2 - VDS = 10 V, ID = 7.8 A Ch-1 - 17 - VDS = 10 V, ID = 10 A Ch-2 - 24 - Ch-1 - 435 - V mV/°C V nA μA A  S Dynamic a Input capacitance Output capacitance Reverse transfer capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 7.8 A Total gate charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 7.8 A Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg S11-2380-Rev. B, 28-Nov-11 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz Ch-2 - 846 - Ch-1 - 95 - Ch-2 - 187 - Ch-1 - 42 - Ch-2 - 72 - Ch-1 - 8 12 23 Ch-2 - 15.4 Ch-1 - 3.8 6 Ch-2 - 7.3 11 Ch-1 - 1.4 - Ch-2 - 2.3 - Ch-1 - 1.1 - Ch-2 - 2.2 - Ch-1 0.6 3.2 6.4 Ch-2 0.2 0.8 1.6 pF nC  Document Number: 63482 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic a Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Ch-1 - 15 30 Channel-1 VDD = 15 V, RL = 2.4  ID  6.3 A, VGEN = 4.5 V, Rg = 1  Ch-2 - 15 30 Ch-1 - 12 24 Ch-2 - 12 24 Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Ch-1 - 13 26 Ch-2 - 13 26 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 5 10 18 td(on) tr td(off) tf td(on) tr td(off) Channel-1 VDD = 15 V, RL = 2.4  ID  6.3 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Ch-2 - 9 Ch-1 - 10 20 Ch-2 - 9 18 Ch-1 - 15 30 Ch-2 - 14 28 Ch-1 - 10 20 Ch-2 - 8 16 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage Body diode reverse recovery time IS ISM VSD Qrr Reverse recovery fall time ta tb Ch-1 - - 12 Ch-2 - - 16 Ch-1 - - 30 Ch-2 - - 40 IS = 6.3 A, VGS = 0 V Ch-1 - 0.8 1.2 IS = 3 A, VGS = 0 V Ch-2 - 0.78 1.2 Ch-1 - 15 30 Channel-1 IF = 6.3 A, di/dt = 100 A/μs, TJ = 25 °C Ch-2 - 17 34 Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C trr Body diode reverse recovery charge Reverse recovery rise time TC = 25 °C Ch-1 - 7 15 Ch-2 - 9.5 19 Ch-1 - 9 - Ch-2 - 10 - Ch-1 - 6 - Ch-2 - 7 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 %    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 30 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 VGS = 3 V 10 4 TC = 25 °C 2 5 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 25 30 600 0.035 500 0.030 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6 VGS = 4.5 V 0.025 0.020 VGS = 10 V 0.015 Ciss 400 300 200 Coss 100 Crss 0 0.010 0 5 10 15 20 25 0 30 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 R DS(on) - On-Resistance (Normalized) ID = 7.8 A VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge S11-2380-Rev. B, 28-Nov-11 8 ID = 7.8 A 1.6 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 63482 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7.8 A 10 TJ = 25 °C TJ = 150 °C 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.9 50 1.8 1.7 1.5 Power (W) VGS(th) (V) 40 ID = 250 µA 1.6 1.4 1.3 30 20 1.2 1.1 10 1.0 0.9 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 25 Power Dissipation (W) I D - Drain Current (A) 20 15 Package Limited 10 15 10 5 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 4. Surface Mounted 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 8 VGS = 10 V thru 5 V VGS = 4 V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 VGS = 3 V 6 4 TC = 25 °C 2 10 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0 2.5 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 0.025 1100 0.020 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 880 VGS = 4.5 V 0.015 VGS = 10 V 660 440 Coss 0.010 220 Crss 0.005 0 0 10 20 30 40 50 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 8 VDS = 10 V VDS = 20 V 6 VDS = 15 V 4 2 0 0.0 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge S11-2380-Rev. B, 28-Nov-11 12.8 16.0 R DS(on) - On-Resistance (Normalized) 1.8 ID = 10 A VGS - Gate-to-Source Voltage (V) 30 ID = 10 A 1.6 VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 63482 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.06 100 ID = 10 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.05 TJ = 25 °C 1 0.1 0.01 0.04 0.03 TJ = 125 °C 0.02 0.01 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2.0 50 1.8 40 1.6 30 1.4 ID = 250 μA 1.2 1.0 - 50 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 1 20 10 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 Threshold Voltage Single Pulse Power 100 1000 100 Limited by RDS(on)* 100 μs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 50 25 Power Dissipation (W) ID - Drain Current (A) 40 30 20 Package Limited 10 20 15 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ904DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 61 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.0001 0.02 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63482. S11-2380-Rev. B, 28-Nov-11 Document Number: 63482 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000