SIZ910DT-T1-GE3

SiZ910DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0058 at VGS = 10 V 40a 0.0075 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V a 40 Qg (Typ.) 12.5 nC 29 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL • Synchronous Buck Converter D1 PowerPAIR® 6 x 5 Pin 1 G1 1 D1 2 D1 5 mm G1 D1 3 D1 N-Channel 1 MOSFET 4 G2 S1/D2 Pin 9 S2 8 7 G2 6 mm 6 S1/D2 5 N-Channel 2 MOSFET Ordering Information: SiZ910DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Channel-1 ID Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD a 40 40a 40 40a 22b, c 17b, c 100 24a 32b, c 26b, c 120 3.8b, c 25 31 48 31 28a 4.3b, c 40 80 100 64 4.6b, c 3b, c 5.2b, c 3.3b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V a IDM Pulsed Drain Current (t = 300 µs) Channel-2 30 ± 20 - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f t  10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 22 2.1 27 2.6 19 1 24 1.25 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited - TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2. Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 ID = 250 µA Ch-2 31 ID = 250 µA Ch-1 - 5.4 V 33 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1.2 2.2 VDS = VGS, ID = 250 µA Ch-2 1 2.2 - 6.1 Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 25 VGS = 10 V, ID = 20 A Ch-1 0.0048 0.0058 VGS = 10 V, ID = 20 A Ch-2 0.0025 0.0030 VGS = 4.5 V, ID = 20 A Ch-1 0.0060 0.0075 VGS = 4.5 V, ID = 20 A Ch-2 0.0029 0.0035 VDS = 10 V, ID = 20 A Ch-1 94 VDS = 10 V, ID = 20 A Ch-2 140 Ch-1 1500 Ch-2 3600 Ch-1 285 Ch-2 660 Ch-1 125 Ch-2 305 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-1 26 40 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 60 110 Ch-1 VDS = 0 V, VGS = ± 20 V V nA µA 5 A  S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 12.5 19 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 29 51 Ch-1 4.7 Ch-2 10 Ch-1 4 Ch-2 9.5 Qgs Gate-Drain Charge Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate Resistance Rg f = 1 MHz Ch-1 0.5 2.6 5.2 Ch-2 0.1 0.6 1.2 nC  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 20 40 Ch-2 30 60 Ch-1 25 50 Ch-2 35 70 Ch-1 25 50 Ch-2 35 70 Ch-1 10 20 Ch-2 12 25 Ch-1 10 20 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Ch-2 12 25 Ch-1 25 25 Ch-2 12 25 Ch-1 30 60 Ch-2 35 70 Ch-1 10 20 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD 40 Ch-1 100 Ch-2 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 26 50 Ch-2 36 70 Ch-1 25 50 Ch-2 36 70 Ch-1 17 Ch-2 20 Ch-1 9 Ch-2 16 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 120 Ch-1 trr tb 40 Ch-2 IS = 10 A, VGS = 0 V Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 60 VGS = 3 V 40 20 12 TC = 25 °C 8 TC = 125 °C 4 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 3.0 0.0 0.5 0.008 2000 0.007 1600 VGS = 4.5 V 0.006 0.005 VGS = 10 V Ciss 1200 800 Coss 400 0.004 0.003 Crss 0 0 20 40 60 80 0 100 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 30 Capacitance 1.8 10 ID = 20 A ID = 20 A VDS = 7.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 24 30 1.6 1.4 VGS = 10, 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.016 100 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.014 TJ = 150 °C 10 TJ = 25 °C 1 0.012 0.010 TJ = 125 °C 0.008 0.006 TJ = 25 °C 0.004 0.1 0.002 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 2.0 1.8 80 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 60 40 1.2 20 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 100 ms 1s 10 s 1 TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 80 70 40 50 Power (W) ID - Drain Current (A) 60 Package Limited 40 30 20 30 20 10 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 62 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 100 VGS = 10 V thru 4 V 16 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 80 60 40 12 TC = 25 °C 8 20 4 0 0 TC = 125 °C TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0.0 3.0 0.5 Output Characteristics 5000 0.0030 4000 VGS = 4.5 V C - Capacitance (pF) Ciss 0.0028 0.0026 VGS = 10 V 0.0024 3000 2000 Coss 1000 0.0022 0.0020 Crss 0 0 20 40 60 80 100 120 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 30 Capacitance 10 1.8 ID = 20 A ID = 20 A VDS = 7.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics 0.0032 RDS(on) - On-Resistance (Ω) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 60 70 1.6 1.4 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.012 100 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.010 TJ = 150 °C 10 TJ = 25 °C 1 0.008 0.006 TJ = 125 °C 0.004 0.002 0.1 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 100 2.0 80 Power (W) VGS(th) (V) 1.8 1.6 1.4 ID = 250 μA 60 40 1.2 20 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 1 ms 10 10 ms 1 100 ms 1s 10 s TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 160 140 80 100 Power (W) ID - Drain Current (A) 120 80 60 60 40 Package Limited 40 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ910DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 55 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63539. Document Number: 63539 S11-2380-Rev. C, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000