SIZ916DT-T1-GE3

SiZ916DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A) g Qg (TYP.) RDS(on) () (MAX.) 30 0.00640 at VGS = 10 V 16 a 0.01000 at VGS = 4.5 V 16 a 0.00130 at VGS = 10 V 40 a 0.00175 at VGS = 4.5 V 40 a 7.2 nC 45 nC S2 5 G2 S2 8 7 m m 1 m 5m Top View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 • CPU core power • Computer/server peripherals S1/D2 (Pin 9) G1 • Synchronous buck converter D1 6 • 100 % Rg and UIS tested APPLICATIONS PowerPAIR® 6 x 5 S2 6 • TrenchFET® Gen IV power MOSFETs N-Channel 1 MOSFET • POL 1 2 G 3 D 1 4 D 1 1 D1 Bottom View S1/D2 • Telecom DC/DC G2 N-Channel 2 MOSFET Ordering Information: SiZ916DT-T1-GE3 (lead (Pb)-free and halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS +20, -16 Continuous Drain Current (TJ = 150 °C) 16 a 40 a TC = 70 °C a 40 a a, b, c 40 a, b, c 15.5 b, c 38.8 b, c 80 100 19 28 TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy 16 16 IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS 3.25 TC = 70 °C TA = 25 °C 10 15 5 11.25 22.7 100 PD 14.5 64 3.9 b, c 5.2 b, c 2.5 b, c TJ, Tstg A 4.3 b, c IAS TA = 70 °C Operating Junction and Storage Temperature Range b, c EAS TC = 25 °C Maximum Power Dissipation V TC = 25 °C ID UNIT mJ W 3.3 b, c -55 to 150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. MAX. TYP. MAX. Maximum Junction-to-Ambient b, f t  10 s RthJA 25 32 19 24 Maximum Junction-to-Case (Drain) Steady State RthJC 4.4 5.5 1 1.25 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2. g. TC = 25 °C. S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a VDS VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - VDS/TJ ID = 250 μA Ch-1 - 17 - ID = 250 μA Ch-2 - 8.8 - VGS(th)/TJ ID = 250 μA Ch-1 - -5 - VGS(th) IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA Ch-2 - -5.9 - VDS = VGS, ID = 250 μA Ch-1 1.2 - 2.4 VDS = VGS, ID = 250 μA Ch-2 1 - 2.4 Ch-1 - - ± 100 Ch-2 - - ± 100 VDS = 0 V, VGS = +20 V, -14 V V = 30 V, VDS GS = 0 V Ch-1 - - 1 VDS = 30 V, VGS = 0 V Ch-2 - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 5 VDS  5 V, VGS = 10 V Ch-1 20 - - VDS  5 V, VGS = 10 V Ch-2 25 - - VGS = 10 V, ID = 19 A Ch-1 - 0.00530 0.00640 VGS = 10 V, ID = 20 A Ch-2 - 0.00105 0.00130 VGS = 4.5 V, ID = 15 A Ch-1 - 0.00800 0.01000 VGS = 4.5 V, ID = 20 A Ch-2 - 0.00140 0.00175 VDS = 10 V, ID = 19 A Ch-1 - 55 - VDS = 10 V, ID = 20 A Ch-2 - 116 - Ch-1 - 1208 - Ch-2 - 8082 - Ch-1 - 375 - Ch-2 - 1961 - Ch-1 - 30 - V mV/°C V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 - 227 - Ch-1 - 0.025 0.050 - Ch-2 - 0.028 0.056 - VDS = 15 V, VGS = 10 V, ID = 20 A Ch-1 - 17 26 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 - 106 160 Ch-1 - 7.2 11 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 - 45 68 Ch-1 - 3.6 - Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 - 23.2 - Ch-1 - 0.94 - Ch-2 - 5 - Cr/Ci Ratio Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Output Charge Qoss Gate Resistance S15-1672-Rev. B, 20-Jul-15 Rg pF VDS = 15 V, VGS = 0 V f = 1 MHz Ch-1 - 10 Ch-2 - 57.5 - Ch-1 0.5 2.5 5 Ch-2 0.2 1 2 nC  Document Number: 62721 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 16 24 Ch-2 - 36 54 Ch-1 - 11 20 Ch-2 - 55 83 Ch-1 - 15 23 Ch-2 - 44 66 Ch-1 - 5 10 Ch-2 - 8 16 Ch-1 - 10 20 UNIT Dynamic b Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  tf td(on) tr td(off) Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Ch-2 - 18 27 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 20 30 Ch-2 - 45 68 Ch-1 - 5 10 Ch-2 - 8 16 Ch-1 - - 40 Ch-2 - - 40 Ch-1 - - 80 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage TC = 25 °C IS ISM VSD Ch-2 - - 100 IS = 10 A, VGS = 0 V Ch-1 - 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 - 0.8 1.2 Ch-1 - 15 23 Ch-2 - 65 98 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 4 8 Ch-2 - 52 78 Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 9 - Ch-2 - 30 - Ch-1 - 6 - Ch-2 - 22 - Reverse Recovery Rise Time tb A V ns nC ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 80 5 VGS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) 4 VGS = 4 V 60 40 3 TC = 25 °C 2 20 1 VGS = 3 V 0 TC = 125 °C TC = - 55 °C 0 0 0.5 1 1.5 2 0 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 3 1350 Ciss 1080 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 0.003 810 540 Coss 270 Crss 0 0 0 14 28 42 56 0 70 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 20 1.7 ID = 19 A RDS(on) - On-Resistance (Normalized) ID = 19 A VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) VDS = 15 V 8 6 VDS = 8 V VDS = 24 V 4 2 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge S15-1672-Rev. B, 20-Jul-15 20 VGS = 10 V 1.45 VGS = 4.5 V 1.2 0.95 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62721 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 100 0.02 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 19 A TJ = 150 °C 10 TJ = 25 °C 1 0.015 TJ = 125 °C 0.01 TJ = 25 °C 0.005 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 70 2.1 56 Power (W) VGS(th) (V) 1.8 ID = 250 μA 1.5 42 28 1.2 14 0.9 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 ID - Drain Current (A) Limited by RDS(on)* 10 100 μs 1 10 ms 1 ms 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 30 52 24 Power (W) ID - Drain Current (A) 39 26 18 12 13 6 0 0 0 25 50 75 100 125 0 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 125 150 2.5 Power (W) 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient      * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 5 100 VGS = 10 V thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 75 VGS = 3V 50 3 TC = 25 °C 2 25 1 TC = 125 °C TC = - 55 0 0 0 0.5 1 1.5 2 0 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0025 3 8800 0.0020 6600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0015 VGS = 10 V 0.0010 4400 Coss 2200 Crss 0.0005 0 0 20 40 60 80 100 0 6 12 On-Resistance vs. Drain Current 24 30 Capacitance 1.7 10 ID = 20A RDS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 22 44 66 Qg - Total Gate Charge (nC) Gate Charge S15-1672-Rev. B, 20-Jul-15 88 110 VGS = 10 V 1.45 VGS = 4.5 V 1.2 0.95 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62721 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 100 0.0030 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.0025 TJ = 150 °C 10 TJ = 25 °C 1 0.0020 TJ = 125 °C 0.0015 TJ = 25 °C 0.0010 0.1 0.0 0.0005 0.2 0.4 0.6 0.8 1.0 1.2 2 4 Source-Drain Diode Forward Voltage 8 10 On-Resistance vs. Gate-to-Source Voltage 2.3 100 2 80 Power (W) VGS(th) (V) 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 1.7 ID = 250 μA 1.4 60 40 20 1.1 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 100 100 μs ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 120 210 140 Power (W) ID - Drain Current (A) 90 60 70 30 0 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 2.8 Power (W) 2.1 1.4 0.7 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient        * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 0.02 2. Per Unit Base = R thJA = 55 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62721. S15-1672-Rev. B, 20-Jul-15 Document Number: 62721 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000