SIZ920DT-T1-GE3

New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V 40a Qg (Typ.) 10.5 nC 29 nC PowerPAIR® 6 x 5 Pin 1 G1 1 5 mm D1 2 D1 D1 3 • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • CPU Core Power Computer Peripherals POL Synchronous Buck Converter D1 S1/D2 Pin 9 S2 8 7 G1 N-Channel 1 MOSFET 4 G2 D1 6 mm 6 S1/D2 G2 5 N-Channel 2 MOSFET Ordering Information: SiZ920DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-1 Channel-2 30 ± 20 V 40a 40a 40a 40a 22b, c 17b, c 70 28a 32b, c 26b, c 120 A a 3.6b, c 25 31 39 25 28 4.3b, c 40 80 100 64 4.3b, c 2.8b, c 5.2b, c 3.3b, c TJ, Tstg Unit - 55 to 150 260 mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol RthJA RthJC Typ. Max. Channel-2 Typ. Max. Unit t  10 s 23 29 19 24 Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State 2.5 3.2 1 1.25 Notes: a. Package limited - TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2. Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ VGS(th) Temperature Coefficient VGS(th) Gate Threshold Voltage IGSS Gate Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 ID = 250 µA Ch-2 31 ID = 250 µA Ch-1 - 5.2 V 34 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1.2 2.5 VDS = VGS, ID = 250 µA Ch-2 1 2.2 - 6.1 Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 25 V nA µA 5 A VGS = 10 V, ID = 18.9 A Ch-1 0.0059 0.0071 VGS = 10 V, ID = 20 A Ch-2 0.0025 0.0030 VGS = 4.5 V, ID = 16.9 A Ch-1 0.0074 0.0089 VGS = 4.5 V, ID = 20 A Ch-2 0.0029 0.0035 VDS = 10 V, ID = 18.9 A Ch-1 66 VDS = 10 V, ID = 20 A Ch-2 140 Ch-1 1260 Ch-2 3600 Ch-1 260 Ch-2 660 Ch-1 115  S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 305 VDS = 15 V, VGS = 10 V, ID = 18.9 A Ch-1 22.3 35 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 60 110 Ch-1 10.5 16 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 18.9 A Ch-2 29 51 Ch-1 5.1 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 10 Ch-1 2.8 Qgs Qgd Rg pF Ch-2 f = 1 MHz nC 9.5 Ch-1 0.3 1.6 3.2 Ch-2 0.1 0.6 1.2  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 15 23 Ch-2 30 60 Ch-1 18 30 Ch-2 35 70 Ch-1 15 23 Ch-2 35 70 Ch-1 10 20 Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Ch-2 12 25 Ch-1 4 8 Ch-2 12 25 Ch-1 11 25 Ch-2 12 25 Ch-1 18 30 Ch-2 35 70 Ch-1 8 16 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta ISM VSD Body Diode Voltage Body Diode Reverse Recovery Time 40 Ch-2 40 Ch-1 70 Ch-2 Ch-1 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 17 30 Ch-2 36 70 Ch-1 10 20 Ch-2 36 70 Ch-1 10 Ch-2 20 Ch-1 7 Ch-2 16 trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C tb A 120 IS = 10 A, VGS = 0 V Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 70 VGS = 10 V thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 56 42 VGS = 3V 28 3 TC = 25 °C 2 14 1 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) TC = 125 °C TC = - 55 °C 0 2 0.6 Output Characteristics 1.8 2.4 3 Transfer Characteristics 0.0100 1800 0.0085 1350 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.2 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.0070 VGS = 10 V Ciss 900 450 0.0055 Coss Crss 0 0.0040 0 14 28 42 ID - Drain Current (A) 56 0 70 5 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 8 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 2 0 0 5 10 15 20 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 VGS = 10 V ID = 18.9 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) I D = 18.9 A 4 20 25 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.02 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 18.9 A TJ = 150 °C 10 TJ = 25 °C 1 0.015 TJ = 125 °C 0.01 TJ = 25 °C 0.005 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 2.1 80 Power (W) VGS(th) (V) 1.8 ID = 250 μA 1.5 60 40 1.2 20 0.9 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.01 Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power 100 Limited by RDS(on)* 100 μs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 65 ID - Drain Current (A) 52 39 Package Limited 26 13 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 50 2.5 40 2.0 30 1.5 Power (W) Power (W) Current Derating* 20 10 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 4. Surface Mounted 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 VGS = 10 V thru 4 V 16 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 80 60 40 12 TC = 25 °C 8 20 4 0 0 TC = 125 °C TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 3.0 0.0 0.5 Output Characteristics 5000 0.0030 4000 VGS = 4.5 V C - Capacitance (pF) Ciss 0.0028 0.0026 VGS = 10 V 0.0024 3000 2000 Coss 1000 0.0022 Crss 0 0.0020 0 20 40 60 80 100 0 120 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 30 Capacitance 10 1.8 ID = 20 A ID = 20 A VDS = 7.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics 0.0032 RDS(on) - On-Resistance (Ω) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 60 70 1.6 1.4 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.012 100 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.010 TJ = 150 °C 10 TJ = 25 °C 1 0.008 0.006 TJ = 125 °C 0.004 0.002 0.1 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 2.2 2.0 80 Power (W) VGS(th) (V) 1.8 1.6 1.4 ID = 250 μA 60 40 1.2 20 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 1 ms 10 10 ms 1 100 ms 1s 10 s TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 160 140 80 100 Power (W) ID - Drain Current (A) 120 80 60 60 40 Package Limited 40 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ920DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 55 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63916. Document Number: 63916 S12-0975-Rev. A, 30-Apr-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 11 This document is subject to change without notice. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000