SIZ926DT-T1-GE3

SiZ926DT www.vishay.com Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs FEATURES PowerPAIR® 6 x 5 S2 S2 6 5 G2 S2 8 7 • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested S1/D2 (Pin 9) • Optimized Qgs/Qgs ratio improves switching characteristics D1 6 1 2 G 3 D 1 4 D 1 1 D1 Bottom View m m 1 m 5m Top View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 CHANNEL-1 CHANNEL-2 25 0.00480 0.00790 5.9 40 25 0.00220 0.00335 12.5 60 D1 • CPU core power • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter G2 • Telecom DC/DC N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5 SiZ926DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (100 μs pulse width) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d TJ, Tstg CHANNEL-1 CHANNEL-2 25 25 +16, -12 +16, -12 40 a 60 a 40 a 60 a b, c 22 37 b, c b, c 17.5 30 b, c 100 170 16.8 33.6 3.2 b, c 4 b, c 15 28 11 39 20.2 40 12.9 25.8 3.8 b, c 4.8 b, c 2.4 b, c 3.1 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 26 4.7 TYP. 21 2.5 MAX. 33 6.2 MAX. 26 3.1 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2 g. TC = 25 °C S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VGS = 0 V, ID = 250 μA Ch-1 25 - - VGS = 0 V, ID = 250 μA Ch-2 25 - - VDS/TJ ID = 250 μA Ch-1 - 19 - ID = 250 μA Ch-2 - 15 - VGS(th)/TJ ID = 250 μA Ch-1 - 4.9 - VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA Ch-2 - 4.6 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.2 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 Ch-1 - - 100 Ch-2 - - 100 1 VDS = 0 V, VGS = +16 V, -12 V VDS = 25 V, VGS = 0 V Ch-1 - - VDS = 25 V, VGS = 0 V Ch-2 - - 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 10 VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 10 VDS 5 V, VGS = 10 V Ch-1 20 - - VDS 5 V, VGS = 10 V Ch-2 20 - - VGS = 10 V, ID = 5 A Ch-1 - 0.00380 0.00480 VGS = 10 V, ID = 8 A Ch-2 - 0.00173 0.00220 VGS = 4.5 V, ID = 3 A Ch-1 - 0.00640 0.00790 VGS = 4.5 V, ID = 5 A Ch-2 - 0.00265 0.00335 VGS = 10 V, ID = 5 A Ch-1 - 40 - VGS = 10 V, ID = 8 A Ch-2 - 55 - Ch-1 - 925 - V mV/°C V nA μA A  S Dynamic a Input capacitance Ciss Ch-2 - 2150 - Ch-1 - 310 - Ch-2 - 800 - Ch-1 - 52 - Ch-2 - 100 - Ch-1 - 0.056 0.115 Ch-2 - 0.047 0.095 VDS = 10 V, VGS = 10 V, ID = 5 A Ch-1 - 12.5 19 Output capacitance Coss Channel-1 VDS = 10 V, VGS = 10 V, f = 1 MHz Reverse transfer capacitance Crss Channel-2 VDS = 10 V, VGS = 10 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg VDS = 10 V, VGS = 10 V, ID = 8 A Ch-2 - 27 41 VDS = 10 V, VGS = 4.5 V, ID = 5 A Ch-1 - 5.9 8.9 VDS = 10 V, VGS = 4.5 V, ID = 8 A Ch-2 - 12.5 19 Ch-1 - 2.5 - Ch-2 - 5.4 - Ch-1 - 1.2 - Ch-2 - 2.1 - Ch-1 - 5 - Gate-source charge Qgs Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 5 A Gate-drain charge Qgd Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 8 A Output charge Gate resistance S19-0939-Rev. C, 11-Nov-2019 Qoss Rg VDS = 10 V, VGS = 0 V f = 1 MHz Ch-2 - 13 - Ch-1 0.18 0.92 1.9 Ch-2 0.12 0.6 1.2 pF nC  Document Number: 68127 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time Channel-2 VDD = 10 V, RL = 2  ID  5 A, VGEN = 10 V, Rg = 1  tf td(on) Rise time Turn-off delay time Channel-1 VDD = 10 V, RL = 2  ID  5 A, VGEN = 10 V, Rg = 1  tr td(off) Fall time Channel-1 VDD = 10 V, RL = 2  ID  5 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 10 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf Ch-1 - 8 Ch-2 - 10 20 Ch-1 - 20 40 Ch-2 - 20 40 Ch-1 - 12 25 Ch-2 - 17 35 Ch-1 - 8 20 Ch-2 - 8 20 Ch-1 - 12 25 Ch-2 - 16 35 Ch-1 - 47 100 Ch-2 - 40 80 Ch-1 - 6 15 Ch-2 - 13 30 Ch-1 - 12 25 Ch-2 - 12 25 Ch-1 - - 16.8 Ch-2 - - 33.6 Ch-1 - - 100 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage TC = 25 °C IS ISM VSD Ch-2 - - 170 IS = 5 A, VGS = 0 V Ch-1 - 0.81 1.2 IS = 8 A, VGS = 0 V Ch-2 - 0.77 1.2 Ch-1 - 25 50 Ch-2 - 20 40 Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Channel-1 IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 15 30 Ch-2 - 15 30 Reverse recovery fall time ta Channel-2 IF = 8 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 13.5 - Reverse recovery rise time tb Ch-2 - 13 - Ch-1 - 11.5 - Ch-2 - 7 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 %    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 80 10000 80 100 20 60 1000 1st line 2nd line 40 2nd line ID - Drain Current (A) 1000 1st line 2nd line 40 VGS = 3 V 0 10 0.5 1 1.5 2 2.5 3 10 0 1 2 Output Characteristics Transfer Characteristics 10000 1200 1000 VGS = 4.5 V 0.006 100 0.003 0 600 Coss 400 60 100 Crss 0 10 40 1000 800 200 VGS = 10 V 20 Ciss 1st line 2nd line 1000 0.009 2nd line C - Capacitance (pF) 0.012 0 80 10 0 5 10 15 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 1.6 ID = 5 A VDS = 10 V 1000 1st line 2nd line VDS = 15 V VDS = 5 V 4 100 2 0 10 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) 10000 6 25 Axis Title Axis Title 10 8 5 Axis Title 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 3 VDS - Drain-to-Source Voltage (V) 2nd line 0.015 0 TC = -55 °C TC = 125 °C 0 0 100 TC = 25 °C 20 10000 ID = 5 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S19-0939-Rev. C, 11-Nov-2019 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 4 V 60 Document Number: 68127 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 0.020 1000 TJ = 25 °C 1 100 0.1 0.015 1000 0.010 TJ = 150 °C 0.2 0.4 0.6 0.8 1.0 100 0.005 TJ = 25 °C 0 10 0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 5 A 10 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.2 40 10000 30 1.8 Power (W) 1000 1st line 2nd line 2nd line VGS(th) (V) 2.0 1.6 ID = 250 μA 20 100 10 1.4 1.2 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM Limited RDS(on) Limited (1) ID(on) Limited 1000 10 100 μs 1 ms 10 ms 100 ms 100 1s 10 s DC 1 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 BVDSSLimited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 60 20 10000 Package limited 30 Power (W) 15 1000 40 1st line 2nd line 2nd line ID - Drain Current (A) 50 10 100 20 5 10 0 10 0 25 50 75 100 TC - Case Temperature (°C) 2nd line Current Derating a 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 VGS = 10 V thru 4 V 1st line 2nd line 40 100 20 2 2.5 TC = -55 °C 0 10 1.5 100 TC = 25 °C TC = 125 °C 0 1 40 20 VGS = 3 V 0.5 1000 60 1st line 2nd line 1000 60 0 10000 80 2nd line ID - Drain Current (A) 80 2nd line ID - Drain Current (A) 100 10000 3 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 2500 10000 0.004 0.002 VGS = 10 V 100 0.001 1000 1500 Coss 1000 100 500 Crss 0 10 20 40 60 80 0 100 10 0 5 10 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 1.6 ID = 8 A VDS = 10 V 1000 1st line 2nd line VDS = 15 V 6 VDS = 5 V 4 100 2 0 10 5 10 15 20 25 30 2nd line RDS(on) - On-Resistance (Normalized) 10000 8 25 Axis Title Axis Title 10 0 15 10000 ID = 8 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S19-0939-Rev. C, 11-Nov-2019 1st line 2nd line 0 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 1000 2nd line C - Capacitance (pF) 2000 VGS = 4.5 V 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 68127 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 TJ = 25 °C 1 100 0.1 0.2 0.4 0.6 0.8 1.0 1000 0.008 0.006 TJ = 150 °C 0.004 100 0.002 TJ = 25 °C 0 10 0 ID = 8 A 0.010 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 10000 0.012 1st line 2nd line 2nd line IS - Source Current (A) 100 1.2 0 2 4 10 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.0 10000 40 30 1.6 Power (W) 1000 1st line 2nd line 2nd line VGS(th) (V) 1.8 1.4 ID = 250 μA 20 100 10 1.2 1.0 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM Limited RDS(on) Limited (1) ID(on) Limited 1000 10 100 μs 1 ms 10 ms 100 ms 100 1s 10 s DC 1 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 BVDSSLimited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 40 10000 120 Package limited 60 40 Power (W) 30 1000 80 1st line 2nd line 2nd line ID - Drain Current (A) 100 20 100 10 20 0 10 0 25 50 75 100 TC - Case Temperature (°C) 2nd line Current Derating a 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ926DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 57 °C/W Single Pulse 0.01 0.0001 0.001 t1 t2 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68127. S19-0939-Rev. C, 11-Nov-2019 Document Number: 68127 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000