SIZ988DT-T1-GE3

SiZ988DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (MAX.) ID (A) 0.0075 at VGS = 10 V 40 g 0.0120 at VGS = 4.5 V 32 g 0.0041 at VGS = 10 V 60 0.0052 at VGS = 4.5 V 60 Qg (TYP.) • Optimized Qgs/Qgs ratio improves switching characteristics 15.4 nC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 G2 S2 8 7 APPLICATIONS m m 1 m 5m Top View D1 • CPU core power S1/D2 (Pin 9) D1 6 • 100 % Rg and UIS tested 6.9 nC PowerPAIR® 6 x 5 S2 S2 6 5 • TrenchFET® Gen IV power MOSFETs 1 2 G 3 D 1 4 D 1 1 D1 Bottom View • Computer / server peripherals G1 • POL N-Channel 1 MOSFET • Synchronous buck converter • Telecom DC/DC S1/D2 G2 Ordering Information: N-Channel 2 MOSFET SiZ988DT-T1-GE3 (lead (Pb)-free and halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) CHANNEL-1 TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) g ID IDM Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e CHANNEL-2 30 +20, -16 VDS VGS TJ, Tstg UNIT V a 40 60 32 g 60 a b, c 17.5 27 b, c b, c 14 21.7 b, c 70 140 16.8 33.6 3.2 b, c 4 b, c 10 20 5 20 20.2 40 12.9 25.8 3.8 b, c 4.8 b, c 2.4 b, c 3.1 b, c -55 to +150 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. TYP. MAX. MAX. Maximum Junction-to-Ambient b, f t  10 s RthJA 26 33 21 26 Maximum Junction-to-Case (Drain) Steady State RthJC 4.7 6.2 2.5 3.1 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2. g. TC = 25 °C. S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - VDS = VGS, ID = 250 μA Ch-1 1.2 - 2.4 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.2 Ch-1 - - ± 100 Ch-2 - - ± 100 Ch-1 - - 1 Ch-2 - - 1 Ch-1 - - 10 Ch-2 - - 10 Ch-1 25 - - Ch-2 25 - - VGS = 10 V, ID = 10 A Ch-1 - 0.0057 0.0075 VGS = 10 V, ID = 19 A Ch-2 - 0.0028 0.0041 VGS = 4.5 V, ID = 8 A Ch-1 - 0.0077 0.0120 VGS = 4.5 V, ID = 15 A Ch-2 - 0.0040 0.0052 VDS = 10 V, ID = 10 A Ch-1 - 54 - VDS = 10 V, ID = 10 A Ch-2 - 52 - Ch-1 - 1000 - Ch-2 - 2425 - VDS = 0 V, VGS = ± 20 V, -16 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b ID(on) RDS(on) gfs VDS  5 V, VGS = 10 V V V nA μA A  S Dynamic a Input Capacitance Ciss Output Capacitance Coss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 - 280 - Ch-2 - 730 - Reverse Transfer Capacitance Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 - 34 - Crss / Ciss Ratio VDS = 15 V, VGS = 10 V, ID = 10 A Total Gate Charge Qg Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate-Source Charge Qgs Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate-Drain Charge Qgd Output Charge Qoss VDS = 15 V, VGS = 0 V Rg f = 1 MHz Gate Resistance S15-2567-Rev. A, 02-Nov-15 Ch-2 - 65 - Ch-1 - 0.034 0.068 Ch-2 - 0.027 0.054 Ch-1 - 14.3 21.5 Ch-2 - 34 51 Ch-1 - 6.9 10.5 Ch-2 - 15.4 23.1 Ch-1 - 2.8 - Ch-2 - 5.8 - Ch-1 - 1.6 - Ch-2 - 2.6 - Ch-1 - 7.8 - Ch-2 - 20 - Ch-1 0.4 1.6 3.2 Ch-2 0.3 1.7 3.4 pF nC  Document Number: 66937 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Dynamic SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 15 30 Ch-2 - 20 40 Ch-1 - 10 20 Ch-2 - 15 30 Ch-1 - 15 30 Ch-2 - 25 50 Ch-1 - 7 15 UNIT a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  td(off) Channel-2 VDD = 15 V, RL = 1.5 ID  10 A, VGEN = 4.5 V, Rg = 1  tf td(on) tr Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  td(off) Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Ch-2 - 10 20 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 15 30 Ch-2 - 27 50 Ch-1 - 5 10 Ch-2 - 10 20 Ch-1 - - 16.8 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current (t = 100 μs) Body Diode Voltage IS TC = 25 °C ISM VSD Ch-2 - - 33.6 Ch-1 - - 70 Ch-2 - - 140 IS = 5 A, VGS = 0 V Ch-1 - 0.77 1.2 IS = 10 A, VGS = 0 V Ch-2 - 0.8 1.2 Ch-1 - 19 35 Ch-2 - 31 62 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 5 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 7 14 Ch-2 - 19 40 Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 10 - Ch-2 - 14 - Ch-1 - 9 - Ch-2 - 17 - Reverse Recovery Rise Time tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 μs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 55 VGS = 10 V thru 4 V 44 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 56 42 28 14 33 TC = 25 °C 22 11 TC = 125 °C VGS = 2 V 0 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 1200 0.016 960 5 0.012 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.008 VGS = 10 V 720 Coss 480 240 0.004 Crss 0 0.000 0 0 14 28 42 ID - Drain Current (A) 56 5 70 10 20 25 30 Capacitance On-Resistance vs. Drain Current 1.7 10 ID = 10 A RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge S15-2567-Rev. A, 02-Nov-15 15 VGS = 10 V 1.5 1.3 VGS = 4.5 V 1.1 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 66937 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID = 10 A 0.024 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.018 TJ = 125 °C 0.012 0.006 0.01 TJ = 25 °C 0.000 0.001 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0 1.5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 0.5 0.2 - 0.1 Power (W) VGS(th) - Variance (V) 30 ID = 5 mA - 0.4 20 ID = 250 μA 10 - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 Threshold Voltage 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 1000 Limited by RDS(on)* IDM Limited ID - Drain Current (A) 100 IDM Limited 10 100 μs 1 ms 10 ms 100 ms 1s 10 s DC 1 0.1 TA = 25 °C BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 20 40 30 Power (W) ID - Drain Current (A) 15 20 10 5 10 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 20 VGS = 10 V thru 4 V 70 16 ID - Drain Current (A) ID - Drain Current (A) 60 50 40 30 VGS = 3 V 12 TC = 25 °C 8 TC = 125 °C 20 4 TC = - 55 °C 10 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 0.0050 2.5 3.0 3.5 3000 0.0045 2400 VGS = 4.5 V C - Capacitance (pF) Ciss 0.0040 0.0035 0.0030 VGS = 10 V 1800 1200 Coss 600 0.0025 Crss 0.0020 0 0 10 20 30 40 50 60 70 80 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 1.6 10 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 2.0 Transfer Characteristics Output Characteristics RDS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 8 VDS = 7.5 V 6 VDS = 15 V VDS = 24 V 4 2 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge S15-2567-Rev. A, 02-Nov-15 28 35 ID = 10 A VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 66937 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.010 ID = 10 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.008 TJ = 150 °C 10 TJ = 25 °C 1 0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.1 40 1.9 30 Power (W) VGS(th) (V) 1.7 1.5 ID = 250 μA 20 1.3 10 1.1 0.9 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 100 Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 1000 Limited by RDS(on)* IDM Limited ID - Drain Current (A) 100 IDM Limited 10 100 μs 1 ms 10 ms 100 ms 1s 10 s DC 1 0.1 TA = 25 °C BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 100 80 60 Power (W) ID - Drain Current (A) 30 Package Limited 40 20 10 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ988DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 57 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66937. S15-2567-Rev. A, 02-Nov-15 Document Number: 66937 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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