SIZ998DT-T1-GE3

SiZ998DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PowerPAIR® 6 x 5 S2 5 S2 S2 7 6 G2 8 • TrenchFET® Gen IV power MOSFETs • SkyFET® low side MOSFET with integrated Schottky S1/D2 (Pin 9) • 100 % Rg and UIS tested D1 6 m m 1 m 5m Top View 1 2 G 3 D 1 4 D 1 1 D1 Bottom View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration D1 • CPU core power CHANNEL-1 CHANNEL-2 30 30 0.0067 0.0028 0.0100 0.0038 5.4 13.2 20 60 Dual plus integrated Schottky (SkyFET) • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter • Telecom DC/DC Schottky Diode G2 N-Channel 2 MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5 SiZ998DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg CHANNEL-1 CHANNEL-2 30 +20, -16 20 a 60 a a 20 60 a 18.8 b, c 32.8 b, c 15 c 26.2 b, c 90 130 16.8 27.4 3.2 b, c 4 b, c 15 20 11.25 20 20.2 32.9 12.9 21.1 3.8 b, c 4.8 b, c b, c 2.4 3.1 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 26 4.7 TYP. 21 3 MAX. 33 6.2 MAX. 26 3.8 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2 g. TC = 25 °C S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate threshold voltage Gate source leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.2 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.2 Ch-1 - - ± 100 Ch-2 - - ± 100 VDS = 0 V, VGS = ± 20 V, -16 V VDS = 30 V, VGS = 0 V Zero gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs Ch-1 - - 1 Ch-2 - - 150 Ch-1 - - 5 Ch-2 - - 3 VDS  5 V, VGS = 10 V Ch-1 20 - - Ch-2 20 - - VGS = 10 V, ID = 15 A Ch-1 - 0.0047 0.0067 VGS = 10 V, ID = 19 A Ch-2 - 0.0022 0.0028 VGS = 4.5 V, ID = 12 A Ch-1 - 0.0065 0.0100 VGS = 4.5 V, ID = 15 A Ch-2 - 0.0030 0.0038 VDS = 10 V, ID = 15 A Ch-1 - 80 - VDS = 10 V, ID = 19 A Ch-2 - 165 - V V nA μA mA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Ch-1 - 930 - Ch-2 - 2620 - Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 - 325 - Ch-2 - 902 - Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 - 21 - Ch-2 - 55 - Ch-1 - 0.023 0.046 Ch-2 - 0.021 0.042 Ch-1 - 12 18 Ch-2 - 29.5 44.3 Ch-1 - 5.4 8.1 19.8 Crss/Ciss ratio VDS = 15 V, VGS = 10 V, ID = 20 A Total gate charge Qg Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss Gate resistance S16-0001-Rev. B, 11-Jan-16 Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A VDS = 15 V, VGS = 0 V f = 1 MHz Ch-2 - 13.2 Ch-1 - 3 - Ch-2 - 7.1 - Ch-1 - 0.75 - Ch-2 - 1.3 - Ch-1 - 10 - Ch-2 - 30 - Ch-1 0.3 1.5 3 Ch-2 0.2 1.1 2.2 pF nC  Document Number: 62979 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 15 30 Ch-2 - 25 50 Ch-1 - 65 130 Ch-2 - 65 130 Ch-1 - 10 20 Ch-2 - 17 34 Ch-1 - 10 20 UNIT Dynamic a Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5 ID  10 A, VGEN = 4.5 V, Rg = 1  tf td(on) tr td(off) Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf Ch-2 - 10 20 Ch-1 - 10 20 Ch-2 - 15 30 Ch-1 - 25 50 Ch-2 - 20 40 Ch-1 - 15 30 Ch-2 - 22 44 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - - 20 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage Body diode reverse recovery time IS ISM VSD Qrr Reverse recovery fall time ta tb Ch-2 - - 60 Ch-1 - - 90 130 Ch-2 - - IS = 10 A, VGS = 0 V Ch-1 - 0.8 1.2 IS = 2 A, VGS = 0 V Ch-2 - 0.41 0.53 Ch-1 - 30 60 Ch-2 - 47 94 Ch-1 - 11 22 Ch-2 - 55 110 Ch-1 - 18 - Ch-2 - 27 - Ch-1 - 12 - Ch-2 - 20 - trr Body diode reverse recovery charge Reverse recovery rise time TC = 25 °C Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 %     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 60 40 VGS = 3 V 12 TC = 25 °C 8 TC = 125 °C 20 4 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 Output Characteristics 2.5 3.0 3.5 1200 1000 0.008 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2.0 Transfer Characteristics 0.010 0.006 0.004 VGS = 10 V 0.002 Ciss 800 600 Coss 400 200 0.000 0 Crss 0 20 40 60 80 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 1.8 10 ID = 19 A VDS = 7.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 ID = 19 A 1.6 VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge S16-0001-Rev. B, 11-Jan-16 12 15 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62979 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.015 100 ID = 19 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.012 TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.009 TJ = 125 °C 0.006 TJ = 25 °C 0.003 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 1.2 ID = 250 μA 30 20 1.0 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 100 Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 1000 Limited by RDS(on)* IDM Limited ID - Drain Current (A) 100 10 100 μs 1 ms 1 10 ms 0.1 100 ms 1s 10 s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix 40 20 30 15 Power Dissipation (W) ID - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Package Limited 20 10 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 130 104 15 ID - Drain Current (A) ID - Drain Current (A) VGS = 10 V thru 4 V 78 VGS = 3 V 52 TC = 25 °C 10 5 26 TC = 125 °C TC = -55 °C VGS = 2 V 0 0 0.5 1 1.5 0 2 0 VDS - Drain-to-Source Voltage (V) 0.7 1.4 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4040 0.005 3030 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.004 VGS = 4.5 V 0.003 VGS = 10 V 0.002 Ciss 2020 Coss 1010 0.001 Crss 0 0 0 20 40 ID - Drain Current (A) 60 0 80 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1.7 10 VGS = 10 V, 19 A RDS(on) - On-Resistance (Normalized) VDS = 8 V; 15 V ID = 19 A VGS - Gate-to-Source Voltage (V) 30 8 6 4 VDS = 24 V 2 0 0 6 12 18 24 Qg - Total Gate Charge (nC) Gate Charge S16-0001-Rev. B, 11-Jan-16 30 1.5 1.3 VGS = 4.5 V, 15 A 1.1 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62979 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.010 ID =19A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.008 TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002 0.000 0.3 0.6 0.9 0 1.2 2 Source-Drain Diode Forward Voltage 6 8 10 On-Resistance vs. Gate-to-Source Voltage 10-1 50 VDS = 30 V 10-2 40 10-3 Power (W) I R- Reverse (A) 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) VDS = 10 V, 20 V 10-4 10-5 30 20 10 10-6 0 25 0 0.001 TJ - Junction Temperature (°C) 1 Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 50 75 100 125 150 0.01 0.1 10 100 1000 1000 Limited by RDS(on)* Limited by IDM ID - Drain Current (A) 100 100 μs 10 1 ms 1 10 ms 100 ms 10 s, 1 s 0.1 DC TA = 25 °C 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ID - Drain Current (A) 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 40 2.5 2 Power (W) Power (W) 30 20 1.5 1 10 0.5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ998DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 61 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.0001 0.02 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62979. S16-0001-Rev. B, 11-Jan-16 Document Number: 62979 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 6 x 5 Case Outline Pin 7 Pin 6 Pin 5 Pin 5 Pin 6 Pin 7 Pin 8 K L Pin 8 b z L3 2X A D 0.10 C K1 E E1 D1 Pin 1 Pin 2 0.10 C Pin 3 Pin 4 Pin 3 Pin 4 2X E2 D1 Pin 2 Pin # 1 ident (optional) Pin 1 e Back side view Top side view 0.10 C A1 A3 b1 A C 0.08 C F F MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.10 0.000 - 0.004 A3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 BSC 0.010 BSC D 4.90 5.00 5.10 0.192 0.196 0.200 D1 3.75 3.80 3.85 0.148 0.150 0.152 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107 E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.050 BSC 0.018 typ. K Option AA (for W/B) 0.45 typ. K Option AB (for BWL) 0.65 typ. 0.025 typ. K1 0.66 typ. 0.025 typ. L 0.33 0.43 0.53 0.013 0.017 L3 0.23 BSC 0.009 BSC z 0.34 BSC 0.013 BSC 0.020 ECN: T14-0782-Rev. C, 22-Dec-14 DWG: 6005 Revision: 22-Dec-14 1 Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000