SIZF906BDT-T1-GE3

SiZF906BDT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 0.00210 0.00370 11.7 105 30 0.00068 0.00130 38 257 CPU core power Computer / server peripherals POL Synchronous buck converter Telecom DC/DC N-Channel 1 MOSFET GHS/G1 G1Return/S1 GLS/G2 N-Channel 2 MOSFET Dual VIN/D1 VSW/S1-D2 Schottky Diode GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF906BDT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD CHANNEL-1 30 +20, -16 105 84 36 b, c 29 b, c 120 34 4.1 b, c 23 26.5 38 24 4.5 b, c 2.9 b, c TJ, Tstg CHANNEL-2 30 +20, -16 257 206 63 b, c 50 b, c 350 141 a 8.5 b, c 40 80 83 53 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. 22 2.6 MAX. 28 3.3 CHANNEL-2 TYP. 20 1.2 MAX. 25 1.5 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (source) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 20 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 60 °C/W for channel-1 and 60 °C/W for channel-2 S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 5 mA Ch-2 30 - - Ch-1 36 - - Ch-2 36 - - Ch-1 1.1 - 2.2 Ch-2 1.1 - 2.2 Ch-1 - - ± 100 Ch-2 - - ± 100 Drain-source breakdown voltage VDS Drain-source breakdown voltage c (transient) VDSt VGS = 0 V, t(transient)  1 μs VGS(th) VDS = VGS, ID = 250 μA Gate-source threshold voltage Gate-source leakage IGSS VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - 1 Ch-2 - 100 1000 Ch-1 - - 5 Ch-2 - 500 5000 Ch-1 20 - - Ch-2 20 - - VGS = 10 V, ID = 15 A Ch-1 - 0.00150 0.00210 VDS = 30 V, VGS = 0 V Zero Gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs VDS  5 V, VGS = 10 V VGS = 10 V, ID = 20 A Ch-2 - 0.00045 0.00068 VGS = 4.5 V, ID = 10 A Ch-1 - 0.00250 0.00370 VGS = 4.5 V, ID = 15 A Ch-2 - 0.00085 0.00130 VDS = 10 V, ID = 40 A Ch-1 - VDS = 10 V, ID = 30 A Ch-2 93 - 170 - V nA μA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Qg 1630 - - 5550 - Ch-1 - 690 - Ch-2 - 2320 - Ch-1 - 50 - Ch-2 - 205 - Ch-1 - 0.030 0.060 0.037 0.080 Gate-source charge Qgs Gate-drain charge Qgd Ch-1 - 25 49 Ch-2 - 81 165 Ch-1 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Output charge Qoss VDS = 15 V, VGS = 0 V Gate resistance Rg f = 1 MHz S20-0516-Rev. A, 29-Jun-2020 - Ch-2 Ch-2 VDS = 15 V, VGS = 10 V, ID = 20 A Total gate charge Ch-1 11.7 22 Ch-2 - 38 80 Ch-1 - 5.8 - Ch-2 - 17.8 - Ch-1 - 2.9 - Ch-2 - 8.4 - Ch-1 - 18 - Ch-2 - 65 - Ch-1 0.2 1.2 2 Ch-2 0.12 0.6 1.2 pF nC  Document Number: 77619 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 22 40 Ch-2 - 40 80 Ch-1 - 75 150 Ch-2 - 130 260 Ch-1 - 21 40 Ch-2 - 41 80 Ch-1 - 10 20 Ch-2 - 20 40 Ch-1 - 12 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time tf td(on) Rise time Turn-off delay time tr td(off) Fall time tf Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  Ch-2 - 20 40 Ch-1 - 5 10 Ch-2 - 30 60 Ch-1 - 22 40 Ch-2 - 40 80 Ch-1 - 5 10 Ch-2 - 10 20 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C IS tb Ch-1 - - 34 Ch-2 - - 141 Ch-1 - - 120 350 Ch-2 - - IS = 10 A, VGS = 0 V Ch-1 - 0.8 1.1 IS = 5 A, VGS = 0 V Ch-2 - 0.39 0.59 Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 27 55 Ch-2 - 55 110 Ch-1 - 17 35 Ch-2 - 65 130 Ch-1 - 15 - Ch-2 - 31 - Ch-1 - 12 - Ch-2 - 24 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 % c. Based on characterization, not subject to production testing        Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 120 10000 120 VGS = 10 V thru 4 V 100 VGS = 3 V 100 40 20 1000 80 1st line 2nd line 60 2nd line ID - Drain Current (A) 1000 80 1st line 2nd line 2nd line ID - Drain Current (A) 100 60 TC = 25 °C 100 40 20 TC = 125 °C TC = -55 °C 10 0 0.5 1.0 1.5 2.0 2.5 3.0 10 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10000 10 000 0.0030 1000 0.0025 0.0020 VGS = 10 V 100 0.0015 2nd line C - Capacitance (pF) Ciss VGS = 4.5 V 1st line 2nd line 1000 1000 Coss 100 100 Crss 0.0010 10 0.0005 0 20 40 60 80 100 10 10 120 0 5 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1st line 2nd line 1000 VDS = 24 V 4 100 2 10 0 0 5 10 15 20 25 30 2nd line RDS(on) - On-Resistance (Normalized) VDS = 15 V VDS = 7.5 V 10000 1.8 ID = 20 A 8 20 Axis Title 10000 10 6 15 ID = 15 A 1.6 VGS = 10 V 1000 1.4 1.2 VGS = 4.5 V 100 1.0 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S20-0516-Rev. A, 29-Jun-2020 1st line 2nd line RDS(on) - On-Resistance (Ω) 4 Axis Title 10000 0.0035 2nd line VGS - Gate-to-Source Voltage (V) 3 1st line 2nd line 0 0 Document Number: 77619 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 TJ = 25 °C 1 100 0.1 0.0080 1000 0.0060 1st line 2nd line TJ = 150 °C RDS(on) - On-Resistance (Ω) 2nd line 10 10000 0.0100 10000 1st line 2nd line 2nd line IS - Source Current (A) 100 0.0040 100 TJ = 125 °C 0.0020 TJ = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 10 0 1 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 2.0 10000 50 1.8 40 1.4 100 1.2 30 1st line 2nd line ID = 250 μA 1000 2nd line P - Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 6 20 100 10 1.0 0 0.0001 0.001 0.01 10 0.8 -50 -25 0 25 50 75 100 125 150 0.1 1 10 100 10 1000 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 Limited by RDS(on) a IDM limited ID(ON) limited 1000 10 1 ms, 100 μs 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms,100 10 ms 0.1 1s 10 s TA = 25 °C, single pulse DC BVDSS limited 0.01 0.01 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 120 100 60 100 40 1000 30 1st line 2nd line 1000 80 2nd line P - Power (W) 40 1st line 2nd line 2nd line ID - Drain Current (A) 10000 50 20 100 10 20 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 1000 0.1 0.1 PDM 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 t1 0.02 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 60 °C/W Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 0.05 0.1 1000 Single pulse 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 100 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 120 10000 10000 120 VGS = 10V thru 4 V 1000 60 40 100 1000 80 1st line 2nd line 80 2nd line ID - Drain Current (A) 100 VGS = 3 V 1st line 2nd line 2nd line ID - Drain Current (A) 100 60 TC = 25 °C 100 40 20 20 0 0 TC = 125 °C TC = -55 °C 10 0 0.5 1.0 1.5 2.0 2.5 10 0 3.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.0012 10 000 10000 1000 0.0008 0.0006 VGS = 10 V 100 1000 Coss 1000 100 0.0004 Crss 10 0.0002 20 40 60 80 100 10 100 0 120 5 10 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1st line 2nd line 1000 VDS = 24 V 4 100 2 10 0 20 40 60 80 100 2nd line RDS(on) - On-Resistance (Normalized) VDS = 15 V VDS = 7.5 V 10000 2.0 ID = 20 A 8 30 Axis Title 10000 0 20 ID - Drain Current (A) 10 6 15 ID = 15 A 1.8 VGS = 10 V 1.6 1000 1.4 VGS = 4.5 V 1.2 100 1.0 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S20-0516-Rev. A, 29-Jun-2020 1st line 2nd line 0 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.0010 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 77619 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.0040 10000 RDS(on) - On-Resistance (Ω) 1000 TJ = 25 °C 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 10 1 100 0.1 10000 0.0030 1000 1st line 2nd line 100 0.0020 100 TJ = 125 °C 0.0010 TJ = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 10 0.0000 0 1.0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10-1 10000 40 10000 10-2 VDS = 20 V 10-5 100 10-6 1000 1st line 2nd line 10-4 2nd line P - Power (W) 1000 1st line 2nd line IR (A) 30 VDS = 30 V 10-3 20 100 10 10-7 10-8 0 0.0001 0.001 0.01 10 -50 -25 0 25 50 75 100 125 150 0.1 1 10 100 10 1000 TJ - Junction Temperature (°C) t - Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient Axis Title 1000 ID(ON) limited 1000 10 1 ms, 100 μs 100 ms,100 10 ms 1s 10 s 1 0.1 TA = 25 °C, single pulse DC BVDSS limited 0.01 0.01 1st line 2nd line 2nd line ID - Drain Current (A) 100 10000 IDM limited Limited by RDS(on) a 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 300 250 150 100 100 1000 60 1st line 2nd line 1000 200 2nd line P - Power (W) 80 1st line 2nd line 2nd line ID - Drain Current (A) 10000 100 40 100 20 50 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF906BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 1000 0.1 PDM 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 t1 0.02 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 60 °C/W Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 0.05 0.1 1000 Single pulse 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 100 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77619. S20-0516-Rev. A, 29-Jun-2020 Document Number: 77619 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix A1 K3 4x 5 6 7 8 K L1 A D L 0.10 C 2x L2 PowerPAIR® 6 x 5 F Case Outline K8 2x K4 E1 K1 D1 K5 D2 D3 K7 2x K6 E2 K2 E K7 0.10 C 4 L 2x Pin 1 index 3 e 6x Top side view 0.10 C A C e1 2x 1 b 8x 0.1 M C A B 0.05 M C A1 Back side view c b1 2 e 2 0.08 C See datail A DIMENSION Datail A (Scale 3:1) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 - 0.10 0.000 - 0.004 b 0.35 0.41 0.46 0.014 0.016 0.018 b1 0.38 ref. 0.015 ref. c 0.15 0.20 0.25 0.006 0.008 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.26 3.31 3.36 0.128 0.130 0.132 D2 4.20 4.30 4.40 0.165 0.169 0.173 D3 4.15 4.20 4.25 0.163 0.165 0.167 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 2.50 2.55 2.60 0.098 0.100 0.102 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC e1 0.010 0.050 BSC 3.81 BSC 0.150 BSC K 0.52 0.57 0.62 0.020 0.022 0.024 K1 0.69 0.74 0.79 0.027 0.029 0.031 K2 0.60 0.65 0.70 0.024 0.026 0.028 K3 0.39 BSC 0.015 BSC K4 0.50 0.55 0.60 0.020 0.022 0.024 K5 0.25 0.30 0.35 0.010 0.012 0.014 K6 0.40 0.45 0.50 0.016 0.018 0.020 K7 0.35 0.40 0.45 0.014 0.016 0.018 K8 0.30 0.35 0.40 0.012 0.014 0.016 L 0.33 0.43 0.53 0.013 0.017 0.021 L1 1.31 1.36 1.41 0.052 0.054 0.056 L2 0.20 ref. 0.008 ref. ECN: T20-0097-Rev. C, 25-Feb-2020 DWG: 6043 Note • Millimeters will govern Document Number: 67777 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 25-Feb-2020 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAIR® 6 x 5F 7.00 6.00 (pkg.) 0.40 0.98 0.40 1.05 0.50 1.69 1.98 0.50 0.50 0.27 0.595 0.595 1 8 0.40 0.65 8x 5.00 (pkg.) 1.27 x 3 = 3.81 7 2 1.27 6x 4.46 3 6 1.27 x 2 = 2.54 0.65 4 5 0.595 0.595 0.27 0.50 2.80 0.97 0.40 Component for PowerPair 6 x 5F Land Pattern for PowerPair 6 x 5F Note • Dimensions in millimeters Rev. B, 10-May-2022 Document Number: 76480 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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