SIZF918DT-T1-GE3

SiZF918DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.0040 0.0019 0.0067 0.0027 7 17.3 40 60 Dual CPU core power Computer / server peripherals POL Synchronous buck converter Telecom DC/DC N-Channel 1 MOSFET VIN/D1 GHS/G1 G1Return/S1 GLS/G2 N-Channel 2 MOSFET VSW/S1-D2 Schottky Diode GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF918DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD TJ, Tstg CHANNEL-1 30 +20, -16 40 a 40 a 23 b, c 18.4 b, c 130 22 2.8 b, c 15 11.3 26.6 17 3.4 b, c 2.2 b, c CHANNEL-2 30 +16, -12 60 a 60 a 35 b, c 28 b, c 100 60 a 6.1 b, c 18 16 50 32 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f Maximum junction-to-case (source) SYMBOL t ≤ 10 s Steady state RthJA RthJC CHANNEL-1 TYP. MAX. 30 37 3.8 4.7 CHANNEL-2 TYP. MAX. 27 34 2 2.5 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 6 x 5F is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 77 °C/W for channel-1 and 70 °C/W for channel-2 S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 30 - - Ch-2 30 - - Ch-1 36 - - Ch-2 36 - - Ch-1 1.1 - 2.4 Ch-2 1.0 - 2.3 VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 VDS = 0 V, VGS = +16 V, -12 V Ch-2 - - ± 100 UNIT Static Drain-source breakdown voltage Drain-source breakdown voltage (transient) c Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA VDSt VGS = 0 V, t(transient) = ≤ 1 μs VGS(th) VDS = VGS, ID = 250 μA IGSS VDS = 30 V, VGS = 0 V Zero Gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs VDS ≥ 5 V, VGS = 10 V Ch-1 - - 1 Ch-2 - 20 350 Ch-1 - - 5 Ch-2 - 200 3000 Ch-1 20 - - Ch-2 20 - - VGS = 10 V, ID = 10 A Ch-1 - 0.0029 0.0040 VGS = 10 V, ID = 10 A Ch-2 - 0.0012 0.0019 VGS = 4.5 V, ID = 5 A Ch-1 - 0.0047 0.0068 VGS = 4.5 V, ID = 5 A Ch-2 - 0.0018 0.0027 VDS = 10 V, ID = 20 A Ch-1 - 53 - VDS = 10 V, ID = 20 A Ch-2 87 - V nA μA A Ω S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg Qgs Gate-drain charge Qgd Turn-on delay time Rise time Turn-off delay time Fall time S20-0024-Rev. B, 03-Feb-2020 1060 - 2650 - Ch-1 - 600 - Ch-2 - 1240 - Ch-1 - 45 Ch-2 - 140 - Ch-1 - 0.042 0.085 0.053 0.106 Ch-2 Gate-source charge Gate resistance - Ch-2 VDS = 15 V, VGS = 10 V, ID = 10 A Ch-1 - 14.6 22 VDS = 15 V, VGS = 10 V, ID = 10 A Ch-2 - 37 56 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-1 7 11 VDS = 15 V, VGS = 4.5 V, ID = 10 A Output charge Ch-1 Qoss Rg td(on) tr td(off) tf Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 15 V, VGS = 0 V f = 1 MHz Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-2 - 17.4 27 Ch-1 - 3 - Ch-2 - 6.1 - Ch-1 - 1.5 - Ch-2 - 3.5 - Ch-1 - 14 - Ch-2 - 31 - Ch-1 0.2 1 2 Ch-2 0.1 0.5 1 Ch-1 - 17 35 Ch-2 - 22 45 Ch-1 - 45 90 Ch-2 - 55 110 Ch-1 - 20 40 Ch-2 - 30 60 Ch-1 - 10 20 Ch-2 - 10 20 pF nC Ω ns Document Number: 75963 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 10 20 Ch-2 - 15 30 Ch-1 - 5 10 Ch-2 - 26 50 Ch-1 - 20 40 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 - 30 60 Ch-1 - 5 10 Ch-2 - 5 10 Ch-1 - - 22 Ch-2 - - 60 Ch-1 - - 130 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage Body diode reverse recovery time ISM VSD Ch-2 - - 100 IS = 5 A, VGS = 0 V Ch-1 - 0.8 1.2 IS = 3 A, VGS = 0 V Ch-2 - 0.4 0.6 trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C IS Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C tb Ch-1 - 32 70 Ch-2 - 55 110 Ch-1 - 24 50 Ch-2 - 66 135 Ch-1 - 18 - Ch-2 - 27 - Ch-1 - 14 - Ch-2 - 28 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. Based on characterization, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 80 VGS = 10 V thru 4 V 40 100 20 60 1000 1st line 2nd line 60 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 25 °C 40 100 20 VGS = 3 V TC = 125 °C TC = -55 °C 0 0 10 0 0.5 1.0 1.5 2.0 2.5 3.0 10 0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 10000 1800 10000 1000 0.004 100 VGS = 10 V 900 Coss 600 100 300 0 10 0 20 40 60 80 Crss 0 100 10 0 5 10 15 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 1.6 ID = 10 A 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 7.5 V VDS = 24 V 100 2 0 10 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 30 Axis Title 10 0 1000 Ciss 10000 ID = 5 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S20-0024-Rev. B, 03-Feb-2020 1st line 2nd line 0.002 1200 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 1500 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.008 2nd line VGS - Gate-to-Source Voltage (V) 3 Document Number: 75963 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.010 10000 10000 ID = 5 A 1000 TJ = 25 °C 1 100 0.1 0.008 1000 0.006 TJ = 125 °C 0.004 100 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 0.002 0 10 0 10 0 1.4 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 50 10000 2.0 1.8 10000 40 1000 1000 2nd line Power (W) 1.4 1.2 30 1st line 2nd line 1.6 1st line 2nd line 2nd line VGS(th) (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 20 100 ID = 250 μA 100 10 1.0 0.8 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 ID(ON) Limited Limited by RDS(on) (1) IDM Limited 10000 100 μs 10 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 1 100 ms100 1s 10 s DC TA = 25 °C Single pulse 0.1 0.01 0.01 (1) 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 35 10000 80 10000 25 Package limited 100 20 1000 1st line 2nd line 40 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 30 60 20 15 100 10 5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 PDM 1000 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 77 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 VGS = 10 V thru 4 V 80 100 1000 60 TC = 25 °C 40 100 20 20 1st line 2nd line 40 2nd line ID - Drain Current (A) 1000 VGS = 3 V 60 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 125 °C TC = -55 °C 0 0 10 0.5 1.0 1.5 10 0 2.0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title VGS = 4.5 V 1000 VGS = 10 V 0.001 100 2nd line C - Capacitance (pF) 0.002 0.0015 10000 4000 10000 1st line 2nd line 0.0005 3000 Ciss 1000 2000 Coss 100 1000 Crss 0 10 0 20 40 60 80 0 100 10 0 5 10 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 1.6 ID = 10 A 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 7.5 V VDS = 24 V 100 2 0 10 10 20 30 40 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 30 Axis Title Axis Title 10 0 15 10000 ID = 10 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S20-0024-Rev. B, 03-Feb-2020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.0025 2nd line VGS - Gate-to-Source Voltage (V) 3 1st line 2nd line 0 Document Number: 75963 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 0.008 ID = 10 A 1000 TJ = 25 °C 1 100 0.006 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 0.004 100 TJ = 125 °C 0.002 TJ = 25 °C 0.1 0 10 0 0.2 0.4 0.6 0.8 1.0 10 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10-1 50 10000 10000 10-2 40 10-3 1000 30 1st line 2nd line 10-5 20 100 VDS = 10 V 10-6 2nd line Power (W) 1000 VDS = 30 V 10-4 1st line 2nd line IR - Reverse Current (A) 6 100 10 10-7 10-8 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line 1 10 100 10 1000 Time (s) 2nd line Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 ID(ON) limited Limited by RDS(on) (1) IDM limited 1000 10 100 μs 1 ms 1 10 ms 100 ms 100 1s 10 s DC 0.1 TA = 25 °C single pulse 0.01 0.01 (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 120 45 1000 Package limited 60 1st line 2nd line 90 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 10000 60 30 100 100 15 30 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF918DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 1000 Notes: 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 PDM 0.1 0.05 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.05 0.02 100 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75963. S20-0024-Rev. B, 03-Feb-2020 Document Number: 75963 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix A1 K3 4x 5 6 7 8 K L1 A D L 0.10 C 2x L2 PowerPAIR® 6 x 5 F Case Outline K8 2x K4 E1 K1 D1 K5 D2 D3 K7 2x K6 E2 K2 E K7 0.10 C 4 L 2x Pin 1 index 3 e 6x Top side view 0.10 C A C e1 2x 1 b 8x 0.1 M C A B 0.05 M C A1 Back side view c b1 2 e 2 0.08 C See datail A DIMENSION Datail A (Scale 3:1) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 - 0.10 0.000 - 0.004 b 0.35 0.41 0.46 0.014 0.016 0.018 b1 0.38 ref. 0.015 ref. c 0.15 0.20 0.25 0.006 0.008 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.26 3.31 3.36 0.128 0.130 0.132 D2 4.20 4.30 4.40 0.165 0.169 0.173 D3 4.15 4.20 4.25 0.163 0.165 0.167 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 2.50 2.55 2.60 0.098 0.100 0.102 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC e1 0.010 0.050 BSC 3.81 BSC 0.150 BSC K 0.52 0.57 0.62 0.020 0.022 0.024 K1 0.69 0.74 0.79 0.027 0.029 0.031 K2 0.60 0.65 0.70 0.024 0.026 0.028 K3 0.39 BSC 0.015 BSC K4 0.50 0.55 0.60 0.020 0.022 0.024 K5 0.25 0.30 0.35 0.010 0.012 0.014 K6 0.40 0.45 0.50 0.016 0.018 0.020 K7 0.35 0.40 0.45 0.014 0.016 0.018 K8 0.30 0.35 0.40 0.012 0.014 0.016 L 0.33 0.43 0.53 0.013 0.017 0.021 L1 1.31 1.36 1.41 0.052 0.054 0.056 L2 0.20 ref. 0.008 ref. ECN: T20-0097-Rev. C, 25-Feb-2020 DWG: 6043 Note • Millimeters will govern Document Number: 67777 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 25-Feb-2020 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAIR® 6 x 5F 7.00 6.00 (pkg.) 0.40 0.98 0.40 1.05 0.50 1.69 1.98 0.50 0.50 0.27 0.595 0.595 1 8 0.40 0.65 8x 5.00 (pkg.) 1.27 x 3 = 3.81 7 2 1.27 6x 4.46 3 6 1.27 x 2 = 2.54 0.65 4 5 0.595 0.595 0.27 0.50 2.80 0.97 0.40 Component for PowerPair 6 x 5F Land Pattern for PowerPair 6 x 5F Note • Dimensions in millimeters Rev. B, 10-May-2022 Document Number: 76480 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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