SIZF920DT-T1-GE3

SiZF920DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 0.00307 0.00530 9 76 30 0.00105 0.00145 38.6 197 CPU core power Computer / server peripherals POL Synchronous buck converter Telecom DC/DC N-Channel 1 MOSFET GHS/G1 G1Return/S1 GLS/G2 N-Channel 2 MOSFET Dual VIN/D1 VSW/S1-D2 Schottky Diode GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF920DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD CHANNEL-1 30 +20, -16 76 61 28 b, c 23 b, c 130 26 3.6 b, c 16 13 28 18 3.9 b, c 2.5 b, c TJ, Tstg CHANNEL-2 30 +16, -12 197 158 49 b, c 39 b, c 130 122 7.4 b, c 28 39 74 47 4.5 b, c 2.9 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. 25 3.5 MAX. 32 4.4 CHANNEL-2 TYP. 22 1.3 MAX. 28 1.7 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (source) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W for channel-1 and 65 °C/W for channel-2 S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 30 - - Ch-2 30 - - Ch-1 1.1 - 2.4 UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.2 VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 VDS = 0 V, VGS = +16 V, -12 V Ch-2 - - ± 100 VDS = 30 V, VGS = 0 V Zero Gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs Ch-1 - - 1 Ch-2 - 60 400 Ch-1 - - 5 Ch-2 - 350 4000 VDS  5 V, VGS = 10 V Ch-1 20 - - Ch-2 20 - - VGS = 10 V, ID = 10 A Ch-1 - 0.00230 0.00307 VGS = 10 V, ID = 10 A Ch-2 - 0.00070 0.00105 VGS = 4.5 V, ID = 5 A Ch-1 - 0.00380 0.00530 VGS = 4.5 V, ID = 5 A Ch-2 - 0.00095 0.00145 VDS = 15 V, ID = 25 A Ch-1 - VDS = 15 V, ID = 25 A Ch-2 65 - 135 - V nA μA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge 1300 - 5230 - Ch-1 - 700 - Ch-2 - 2920 - Ch-1 - 35 - Ch-2 - 360 - Ch-1 - 0.027 0.054 0.069 0.140 Ch-2 Qg Ch-1 - 19 29 VDS = 15 V, VGS = 10 V, ID = 10 A Ch-2 - 83 125 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-1 9 14 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-2 - 38.6 58 Ch-1 - 4.4 - Ch-2 - 17 - Ch-1 - 2 - Ch-2 - 9.2 - Ch-1 - 17 - Ch-2 - 46 - Ch-1 0.2 1 2 Ch-2 0.1 0.4 0.8 Gate-source charge Qgs Gate-drain charge Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A Output charge Qoss VDS = 15 V, VGS = 0 V S18-1125 Rev. A, 12-Nov-2018 - Ch-2 VDS = 15 V, VGS = 10 V, ID = 10 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate resistance Ch-1 Rg f = 1 MHz pF nC  Document Number: 79595 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 18 35 Ch-2 - 34 70 Ch-1 - 95 190 Ch-2 - 116 230 Ch-1 - 17 35 Ch-2 - 45 90 Ch-1 - 10 20 Ch-2 - 27 50 Ch-1 - 11 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time tf td(on) Rise time Turn-off delay time tr td(off) Fall time tf Channel-1 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  Ch-2 - 17 35 Ch-1 - 5 10 Ch-2 - 70 150 Ch-1 - 20 40 Ch-2 - 43 85 Ch-1 - 5 10 Ch-2 - 10 20 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C tb Ch-1 - - 26 Ch-2 - - 122 Ch-1 - - 130 130 Ch-2 - - IS = 10 A, VGS = 0 V Ch-1 - 0.77 1.1 IS = 3 A, VGS = 0 V Ch-2 - 0.36 0.60 Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 27 50 Ch-2 - 55 110 Ch-1 - 15 30 Ch-2 - 66 130 Ch-1 - 16 - Ch-2 - 30 - Ch-1 - 11 - Ch-2 - 25 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 %        Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 120 120 10000 100 30 VGS = 3 V 90 1000 1st line 2nd line 60 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 4 V 90 60 TC = 25 °C 100 30 TC = 125 °C 10 0 0 0.5 1.0 1.5 2.0 2.5 TC = -55 °C 10 0 0 3.0 0.5 1 1.5 2 2.5 3 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4 Axis Title Axis Title 10000 0.007 2000 10000 1000 0.004 0.003 100 0.002 VGS = 10 V 1500 Ciss 1000 Coss 100 500 0.001 Crss 10 0.000 30 60 90 10 0 0 120 5 10 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 8 VDS = 15 V 1000 1st line 2nd line VDS = 7.5 V VDS = 24 V 100 2 10 0 10 15 20 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 6 10000 1.6 10000 5 30 Axis Title Axis Title 0 20 ID - Drain Current (A) 10 4 15 ID = 10 A VGS = 4.5 V 1.4 1000 1.2 VGS = 10 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S18-1125 Rev. A, 12-Nov-2018 1st line 2nd line 0 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.005 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.006 Document Number: 79595 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 TJ = 150 °C 40 1 TJ = 25 °C 100 1000 30 1st line 2nd line 1000 2nd line P - Power (W) 10 1st line 2nd line 2nd line IS - Source Current (A) 10000 50 20 100 0.1 10 10 0.01 0.2 0.4 0.6 0.8 1.0 0 0.001 1.2 0.01 0.1 1 10 1000 100 VSD - Source-to-Drain Voltage (V) t - Time (s) Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Axis Title Axis Title 10000 2.0 10000 1000 IDM limited Limited by RDS(on)a 1.8 1000 1.6 1.4 1.2 100 ID = 250 μA 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line VGS(th) (V) 10 ID(ON) limited 1000 100 μs 10 1 ms 10 ms 1 100 ms 100 1s 10 s 0.1 1.0 TA = 25 °C, single pulse 10 0.8 -50 -25 0 25 50 75 0.01 0.01 100 125 150 TJ - Junction Temperature (°C) 1st line 2nd line 0 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Threshold Voltage Note a. VGS > minimum VGS at which RDS(on) is specified Axis Title 10000 0.012 1000 0.008 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.010 0.006 TJ = 125 °C 100 0.004 0.002 TJ = 25 °C 10 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 40 10000 40 100 1000 1st line 2nd line 60 2nd line P - Power (W) 30 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 20 100 10 20 0 10 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Ambient Temperature (°C) TC - Ambient Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 1000 PDM 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 120 120 10000 60 100 30 90 1000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 90 1st line 2nd line 60 TC = 25 °C TC = 125 °C VGS = 3 V 0.5 1.0 1.5 10 0 2.0 0.5 1 1.5 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 3 Axis Title 10000 8000 10000 1st line 2nd line 0.0006 VGS = 10 V 100 0.0004 6000 Ciss 1000 1st line 2nd line 1000 0.0008 2nd line C - Capacitance (pF) VGS = 4.5 V 0.0010 2nd line RDS(on) - On-Resistance (Ω) 2 VDS - Drain-to-Source Voltage (V) 0.0012 4000 Coss 100 2000 Crss 0.0002 0 30 60 90 10 0 10 0.0000 0 120 5 10 25 On-Resistance vs. Drain Current Capacitance Axis Title 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 7.5 V VDS = 24 V 100 2 10 0 40 60 80 100 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 20 30 1.8 10000 0 20 VDS - Drain-to-Source Voltage (V) Axis Title 4 15 ID - Drain Current (A) 10 2nd line VGS - Gate-to-Source Voltage (V) TC = -55 °C 0 10 0 0 100 30 10000 ID = 10 A VGS = 4.5 V 1.6 1.4 1000 1.2 VGS = 10 V 1.0 100 0.8 0.6 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S18-1125 Rev. A, 12-Nov-2018 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 4 V Document Number: 79595 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 TJ = 150 °C 80 1000 1 100 1000 60 1st line 2nd line TJ = 25 °C 2nd line P - Power (W) 10 1st line 2nd line 2nd line IS - Source Current (A) 10000 100 40 100 0.1 20 10 0.01 0.2 0.4 0.6 0 0.001 0.8 0.01 0.1 Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 10000 1000 ID(ON) limited 10-1 Limited by RDS(on)a IDM limited VR = 30 V 1000 1st line 2nd line 10-3 10-4 VR = 10 V 10-5 100 -6 2nd line ID - Drain Current (A) 100 10-2 2nd line IR (A) 10 1000 100 t - Time (s) Axis Title 100 μs 1000 1 ms 10 10 ms 1 100 ms 1s TA = 25 °C, single pulse 10-8 -50 0.01 0.01 10 -25 0 25 50 75 100 125 150 100 10 s 0.1 10-7 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Safe Operating Area, Junction-to-Ambient Reverse Current (Schottky) Note a. VGS > minimum VGS at which RDS(on) is specified Axis Title 10000 0.005 0.004 1000 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 VSD - Source-to-Drain Voltage (V) 100 10 1 1st line 2nd line 0 0.002 TJ = 125 °C 100 0.001 TJ = 25 °C 10 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 250 200 100 100 50 1000 60 1st line 2nd line 1000 150 2nd line P - Power (W) 80 1st line 2nd line 2nd line ID - Drain Current (A) 10000 100 10000 40 100 20 0 10 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Ambient Temperature (°C) TC - Ambient Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF920DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 1000 PDM 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 65 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.05 0.02 Single pulse 0.1 0.0001 100 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                       Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79595. S18-1125 Rev. A, 12-Nov-2018 Document Number: 79595 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix A1 K3 4x 5 6 7 8 K L1 A D L 0.10 C 2x L2 PowerPAIR® 6 x 5 F Case Outline K8 2x K4 E1 K1 D1 K5 D2 D3 K7 2x K6 E2 K2 E K7 0.10 C 4 L 2x Pin 1 index 3 e 6x Top side view 0.10 C A C e1 2x 1 b 8x 0.1 M C A B 0.05 M C A1 Back side view c b1 2 e 2 0.08 C See datail A DIMENSION Datail A (Scale 3:1) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 - 0.10 0.000 - 0.004 b 0.35 0.41 0.46 0.014 0.016 0.018 b1 0.38 ref. 0.015 ref. c 0.15 0.20 0.25 0.006 0.008 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.26 3.31 3.36 0.128 0.130 0.132 D2 4.20 4.30 4.40 0.165 0.169 0.173 D3 4.15 4.20 4.25 0.163 0.165 0.167 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 2.50 2.55 2.60 0.098 0.100 0.102 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC e1 0.010 0.050 BSC 3.81 BSC 0.150 BSC K 0.52 0.57 0.62 0.020 0.022 0.024 K1 0.69 0.74 0.79 0.027 0.029 0.031 K2 0.60 0.65 0.70 0.024 0.026 0.028 K3 0.39 BSC 0.015 BSC K4 0.50 0.55 0.60 0.020 0.022 0.024 K5 0.25 0.30 0.35 0.010 0.012 0.014 K6 0.40 0.45 0.50 0.016 0.018 0.020 K7 0.35 0.40 0.45 0.014 0.016 0.018 K8 0.30 0.35 0.40 0.012 0.014 0.016 L 0.33 0.43 0.53 0.013 0.017 0.021 L1 1.31 1.36 1.41 0.052 0.054 0.056 L2 0.20 ref. 0.008 ref. ECN: T20-0097-Rev. C, 25-Feb-2020 DWG: 6043 Note • Millimeters will govern Document Number: 67777 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 25-Feb-2020 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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