SL02, SL03
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Vishay Semiconductors
Schottky Rectifier Surface-Mount
FEATURES
eSMP® Series
• For surface mounted applications
• Ideal for automated placement
• Low power loss, high efficiency
2
1
23020
• Oxide planar chip junction
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Wave and reflow solderable
23019
SMF (DO-219AB)
• AEC-Q101 qualified
ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: SMF (DO-219AB)
Polarity: color band denotes cathode end
Weight: approx. 15 mg
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), MOQ = 50K
GS08/3K per 7" reel (8 mm tape), MOQ = 30K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Circuit configuration: single
PARTS TABLE
PART
ORDERING CODE
MARKING
REMARKS
SL02
SL02-GS18 or SL02-GS08
S2
Tape and reel
SL03
SL03-GS18 or SL03-GS08
S3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
PART
SYMBOL
VALUE
UNIT
SL02
VRRM
20
V
SL03
VRRM
30
V
SL02
VRMS
14
V
SL03
VRMS
21
V
SL02
VDC
20
V
SL03
VDC
30
V
IF(AV)
1.1
A
IFSM
40
A
TL = 109 °C
Peak forward surge current 8.3 ms single
half sine-wave
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Maximum operating junction temperature
Storage temperature range
SYMBOL
VALUE
UNIT
RthJA
180
K/W
Tj
125
°C
Tstg
-55 to +150
°C
Note
(1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)
Rev. 2.3, 24-Oct-2019
Document Number: 85687
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02, SL03
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 0.5 A (1)
Instantaneous forward voltage
IF = 1.1 A
Typical instantaneous forward voltage
TA = 25 °C
Maximum DC reverse current at rated
DC blocking voltage
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
SL02
VF
0.360
0.385
SL03
VF
0.395
0.43
SL02
VF
0.420
SL03
VF
0.450
SL02
IR
V
V
V
250
μA
mA
TA = 100 °C
SL02
IR
8
TA = 25 °C
SL03
IR
130
μA
TA = 100 °C
SL03
IR
6
mA
SL02
trr
< 10
ns
SL03
trr
< 10
ns
Reverse recovery time
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Instantaneous Forward Current (A)
Average Forward Current (A)
1.5
1.0
0.5
0
0 10
30
17379
50
70
90
Tj = 50 °C
0.01
Tj = 25 °C
0.001
Pulse width = 300 µs
1 % duty cycle
0
17381
Fig. 1 - Forward Current Derating Curve
0.8
0.2
1.0
0.4
0.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics - SL02
250
10 000
Instantaneous Reverse Current (µA)
Junction Capacitance (pF)
Tj = 75 °C
0.1
0.0001
110 130 150
Lead Temperature (°C)
200
150
100
SL02
50
Tj = 100 °C
Tj = 50 °C
100
Tj = 25 °C
10
1
0
2
6
8
4
Reverse Voltage (V)
10
12
Fig. 2 - Typical Junction Capacitance
Tj = 75 °C
1000
10
17380_SL02
Tj = 100 °C
1
17382
0
5
15
20
10
Reverse Voltage (V)
25
Fig. 4 - Typical Reverse Current Characteristics - SL02
Rev. 2.3, 24-Oct-2019
Document Number: 85687
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02, SL03
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Vishay Semiconductors
10 000
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
10
Tj = 100 °C
1
Tj = 75 °C
0.1
Tj = 50 °C
0.01
Tj = 25 °C
0.001
Pulse width = 300 µs
1 % duty cycle
0.0001
0
17383
Tj = 100 °C
1000
Tj = 75 °C
100
Tj = 50 °C
10
Tj = 25 °C
1
0.1
0.8
0.6
1.0
0.4
0.2
Instantaneous Forward Voltage (V)
0
10 15
20 25
Reverse Voltage (V)
5
17384
Fig. 5 - Typical Instantaneous Forward Characteristics - SL03
30
35
Fig. 6 - Typical Reverse Current Characteristics - SL03
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.1(0.003)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.: S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Rev. 2.3, 24-Oct-2019
Document Number: 85687
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02, SL03
www.vishay.com
Vishay Semiconductors
BLISTERTAPE DIMENSION in millimeters: SMF (DO-219AB)
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 2.3, 24-Oct-2019
Document Number: 85687
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02, SL03
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Vishay Semiconductors
ORIENTATION IN CARRIER TAPE - SMF (DO-219AB)
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 2.3, 24-Oct-2019
Document Number: 85687
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 01-Jan-2019
1
Document Number: 91000