SL02-M, SL03-M
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Vishay Semiconductors
Schottky Rectifier Surface-Mount
FEATURES
eSMP® Series
• For surface mounted applications
• Low-profile package
• Ideal for automated placement
2
1
• Low power loss, high efficiency
• Oxide planar chip junction
23020
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
23019
• Wave and reflow solderable
SMF (DO-219AB)
• AEC-Q101 qualified
LINKS TO ADDITIONAL RESOURCES
• Compatible to SOD-123W package case outline or
SOD-123F and SOD-123FL
3D 3D
3D Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SMF (DO-219AB)
Polarity: color band denotes cathode end
Weight: approx. 15 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), MOQ = 50K
08/3K per 7" reel (8 mm tape), MOQ = 30K
Circuit configuration: single
PARTS TABLE
PART
ORDERING CODE
MARKING
REMARKS
SL02-M
SL02-M-18 or SL02-M-08
U2
Tape and reel
SL03-M
SL03-M-18 or SL03-M-08
U3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
PART
SYMBOL
VALUE
UNIT
SL02-M
VRRM
20
V
SL03-M
VRRM
30
V
SL02-M
VRMS
14
V
SL03-M
VRMS
21
V
SL02-M
VDC
20
V
SL03-M
VDC
30
V
IF(AV)
1.1
A
IFSM
40
A
TL = 109 °C
Peak forward surge current 8.3 ms single
half sine-wave
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Maximum operating junction temperature
Storage temperature range
SYMBOL
VALUE
UNIT
RthJA
180
K/W
Tj
125
°C
Tstg
-55 to +150
°C
Note
(1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads (≥ 40 μm thick)
Rev. 2.6, 26-Feb-2021
Document Number: 85190
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02-M, SL03-M
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 0.5 A (1)
Instantaneous forward voltage
IF = 1.1 A
Typical instantaneous forward voltage
TA = 25 °C
Maximum DC reverse current at rated
DC blocking voltage
PART
SYMBOL
TYP.
MAX.
UNIT
SL02-M
VF
MIN.
0.360
0.385
V
SL03-M
VF
0.395
0.43
V
SL02-M
VF
0.420
SL03-M
VF
0.450
SL02-M
IR
V
V
250
μA
TA = 100 °C
SL02-M
IR
8
mA
TA = 25 °C
SL03-M
IR
130
μA
TA = 100 °C
SL03-M
IR
6
mA
SL02-M
trr
< 10
ns
SL03-M
trr
< 10
ns
Reverse recovery time
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Instantaneous Forward Current (A)
Average Forward Current (A)
1.5
1.0
0.5
0
0 10
30
17379
50
70
90
Tj = 50 °C
0.01
Tj = 25 °C
0.001
Pulse width = 300 µs
1 % duty cycle
0
17381
Fig. 1 - Forward Current Derating Curve
0.8
0.2
1.0
0.4
0.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics - SL02
10 000
Instantaneous Reverse Current (µA)
250
Junction Capacitance (pF)
Tj = 75 °C
0.1
0.0001
110 130 150
Lead Temperature (°C)
200
150
100
SL02
50
Tj = 100 °C
Tj = 50 °C
100
Tj = 25 °C
10
1
0
2
6
8
4
Reverse Voltage (V)
10
12
Fig. 2 - Typical Junction Capacitance
Tj = 75 °C
1000
10
17380_SL02
Tj = 100 °C
1
17382
0
5
15
20
10
Reverse Voltage (V)
25
Fig. 4 - Typical Reverse Current Characteristics - SL02
Rev. 2.6, 26-Feb-2021
Document Number: 85190
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02-M, SL03-M
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Vishay Semiconductors
Instantaneous Forward Current (A)
10
Tj = 100 °C
1
Tj = 75 °C
0.1
Tj = 50 °C
0.01
Tj = 25 °C
0.001
Pulse width = 300 µs
1 % duty cycle
0.0001
0
17383
0.8
0.6
1.0
0.4
0.2
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics - SL03
Instantaneous Reverse Current (µA)
10 000
Tj = 100 °C
1000
Tj = 75 °C
100
Tj = 50 °C
10
Tj = 25 °C
1
0.1
0
17384
5
10 15
20 25
Reverse Voltage (V)
30
35
Fig. 6 - Typical Reverse Current Characteristics - SL03
Rev. 2.6, 26-Feb-2021
Document Number: 85190
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02-M, SL03-M
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
0.85 [0.033]
0.35 [0.014]
0.1 [0.004]
0 [0.000]
5°
5°
1.2 [0.047]
1.7 [0.067]
1.9 [0.075]
0.8 [0.031]
Detail Z
enlarged
0.1 [0.004]
0.25 [0.010]
1.8 [0.071] min.
1.08 [0.043]
0.88 [0.035]
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
foot print recommendation:
Reflow soldering
1.3 [0.051]
1.4 [0.055]
1.3 [0.051]
2.9 [0.114]
Created - Date: 15. February 2005
Rev. 6 - Date: 24.Feb.2021
Document no.: S8-V-3915.01-001 (4)
22989
Rev. 2.6, 26-Feb-2021
Document Number: 85190
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL02-M, SL03-M
www.vishay.com
Vishay Semiconductors
ORIENTATION IN CARRIER TAPE - SMF (DO-219AB)
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 2.6, 26-Feb-2021
Document Number: 85190
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000