SL12-M3, SL13-M3
www.vishay.com
Vishay General Semiconductor
Low VF Surface-Mount Schottky Rectifier
FEATURES
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMA (DO-214AC)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
20 V, 30 V
IFSM
50 A
VF
0.34 V
TJ max.
125 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SL12
SL13
SL2
SL3
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum RMS voltage
VRMS
14
21
V
Maximum DC blocking voltage
VDC
20
30
Maximum average forward rectified current at TL = 105 °C (fig. 1)
IF(AV)
1.5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
dV/dt
10 000
V/μs
TJ
-55 to +125
°C
TSTG
-55 to +150
°C
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 0.1 A
Maximum instantaneous forward voltage
IF = 1.0 A
Maximum DC reverse current at rated DC blocking voltage
SYMBOL
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 100 °C
SL13
UNIT
0.230
VF (1)
TA = 25 °C
TA = 25 °C
SL12
0.360
0.340
V
0.445
IR (1)
0.2
6.0
mA
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 24-Apr-2020
Document Number: 89408
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL12-M3, SL13-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance
SL12
SL13
RθJA (1)
88
RθJL (1)
28
UNIT
°C/W
Note
(1) PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SL13-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SL13-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
100
2.0
10000
2nd line
Instantaneous Forward Current (A)
Average Forward Current (A)
Resistive or Inductive Load
1.5
1.0
0.5
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
TJ = 125 °C
10
1000
1
TJ = 25 °C
100
0.1
TJ = -40 °C
0.01
0
50
60
70
80
90 100 110 120 130 140 150 160 170
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
Axis Title
100
40
30
20
10
0
10000
10
TJ = 100 °C
1
1000
0.1
1st line
2 d li
8.3 ms Single Half Sine-Wave
at rated TL
2nd line
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
50
TJ = 25 °C
0.01
0.001
100
0.0001
TJ = -40 °C
0.00001
0.000001
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
10
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Revision: 24-Apr-2020
Document Number: 89408
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SL12-M3, SL13-M3
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 24-Apr-2020
Document Number: 89408
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000
