SM6A27
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Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
DO-218AB
Anode
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
Cathode
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
22 V
VBR
27 V
PPPM (10 x 1000 μs)
4600 W
PD
6W
IRSM
90 A
IFSM
600 A
TJ max.
175 °C
Polarity
Unidirectional
Package
DO-218AB
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
PPPM
4600
W
PD
6.0
W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
IRSM
90
A
Maximum working stand-off voltage
VWM
22.0
V
Peak forward surge current 8.3 ms single half sine-wave
IFSM
600
A
TJ, TSTG
-55 to +175
°C
Peak pulse power dissipation with 10/1000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Operating junction and storage temperature range
UNIT
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
SM6A27
BREAKDOWN VOLTAGE
VBR AT IT
(V)
MIN.
MAX.
24
30
TEST CURRENT
IT
(mA)
STAND-OFF VOLTAGE
VWM
(V)
10
22
Revision: 26-Oct-2021
Document Number: 88383
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6A27
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Vishay General Semiconductor
ADDITIONAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Zener voltage temperature coefficient
IZ = 10 mA
TEST CONDITIONS
VZTC
-
-
36
mV/°C
Clamping voltage for 10 μs/10 ms
exponentially decaying waveform
IPP = 65 A
VC
-
-
40.0
V
-
-
0.99
-
0.94
-
IF = 6.0 A
Instantaneous forward voltage
VF (1)
IF = 100 A
Reverse leakage current
Rated VWM
TJ = 25 °C
TJ = 175 °C
IR
-
-
0.5
-
-
20.0
V
μA
Note
(1) Measured on a 300 μs square pulse width
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
VALUE
UNIT
RθJC
0.95
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
SM6A27HE3/2D
UNIT WEIGHT (g)
(1)
PREFERRED PACKAGE CODE
2.550
BASE QUANTITY
DELIVERY MODE
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
2D
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6000
8.0
Load Dump Power (W)
Power Dissipation (W)
5000
6.0
4.0
2.0
4000
3000
2000
1000
0
0
0
50
100
150
200
25
50
75
100
125
150
175
Case Temperature (°C)
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Revision: 26-Oct-2021
Document Number: 88383
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6A27
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tr = 10 μs
100
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
Instantaneous Reverse Current (μA)
Input Peak Pulse Current (%)
150
Vishay General Semiconductor
100
Half Value - IPP
IPPM
2
50
td
0
10
TJ = 175 °C
1.0
0.1
0.01
TJ = 25 °C
0.001
0.0001
10
0
30
20
40
5
20
35
50
65
80
t - Time (ms)
Percentage of VBR (%)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Reverse Characteristics
95
100
Reverse Surge Power (W)
Transient Thermal Impedance (°C/W)
10 000
1000
100
10
RθJA
10
RθJC
1
0.1
0.01
0.01
0.1
1
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
t - Pulse Width (s)
Fig. 4 - Reverse Power Capability
Fig. 7 - Typical Transient Thermal Impedance
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1.0
0.1
0.01
0.35
0.45
0.55
0.65
0.75
0.85
0.95
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Revision: 26-Oct-2021
Document Number: 88383
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6A27
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
Lead 1
0.138 (3.5)
0.098 (2.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 26-Oct-2021
Document Number: 88383
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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