SM6S24ATHE3/I

SM6S10AT thru SM6S43AT www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) DO-218 Compatible Anode Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 10 V to 43 V VBR 11.1 V to 52.8 V PPPM (10 x 1000 μs) 4600 W PPPM (10 x 10 000 μs) 3600 W PD 6W IFSM 600 A TJ max. 175 °C Polarity Unidirectional Package DO-218AC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation SYMBOL with 10/1000 μs waveform with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range PPPM VALUE 4600 3600 UNIT W PD 6.0 W IPPM (1) See next table A IFSM 600 A TJ, TSTG -55 to +175 °C Note (1) Non-repetitive current pulse at T = 25 °C A Revision: 26-Oct-2021 Document Number: 87735 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10AT thru SM6S43AT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) TYPICAL MAXIMUM TEMP. CLAMPING COEFFICIENT VOLTAGE OF VBR (1) AT IPPM αT VC (V) (%/°C) DEVICE TYPE STAND-OFF TEST VOLTAGE CURRENT VWM IT (mA) (V) MIN. NOM. MAX. SM6S10AT 11.1 11.7 12.3 5.0 10.0 15 250 271 17.0 0.069 SM6S11AT 12.2 12.9 13.5 5.0 11.0 10 150 253 18.2 0.072 SM6S12AT 13.3 14.0 14.7 5.0 12.0 10 150 231 19.9 0.074 SM6S13AT 14.4 15.2 15.9 5.0 13.0 10 150 214 21.5 0.076 SM6S14AT 15.6 16.4 17.2 5.0 14.0 10 150 198 23.2 0.078 SM6S15AT 16.7 17.6 18.5 5.0 15.0 10 150 189 24.4 0.080 SM6S16AT 17.8 18.8 19.7 5.0 16.0 10 150 177 26.0 0.081 SM6S17AT 18.9 19.9 20.9 5.0 17.0 10 150 167 27.6 0.082 SM6S18AT 20.0 21.1 22.1 5.0 18.0 10 150 158 29.2 0.083 SM6S20AT 22.2 23.4 24.5 5.0 20.0 10 150 142 32.4 0.085 SM6S22AT 24.4 25.7 26.9 5.0 22.0 10 150 130 35.5 0.086 SM6S24AT 26.7 28.1 29.5 5.0 24.0 10 150 118 38.9 0.087 SM6S26AT 28.9 30.4 31.9 5.0 26.0 10 150 109 42.1 0.088 SM6S28AT 31.1 32.8 34.4 5.0 28.0 10 150 101 45.4 0.089 SM6S30AT 33.3 35.1 36.8 5.0 30.0 10 150 95 48.4 0.090 SM6S33AT 36.7 38.7 40.6 5.0 33.0 10 150 86 53.3 0.091 SM6S36AT 40.0 42.1 44.2 5.0 36.0 10 150 79 58.1 0.091 SM6S40AT 44.4 46.8 49.1 5.0 40.0 10 150 71 64.5 0.092 SM6S43AT 47.8 50.3 52.8 5.0 43.0 10 150 66 69.4 0.093 Notes • For all types maximum VF = 1.9 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (1) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL VALUE UNIT RθJC 0.95 °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM6S10ATHE3/I (1) UNIT WEIGHT (g) 2.550 PREFERRED PACKAGE CODE I BASE QUANTITY DELIVERY MODE 750 13" diameter plastic tape and reel, anode towards the sprocket hole Note AEC-Q101 qualified (1) Revision: 26-Oct-2021 Document Number: 87735 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10AT thru SM6S43AT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Reverse Surge Power (W) Power Dissipation (W) 8.0 6.0 4.0 2.0 1000 0 50 0 150 100 200 Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 1 - Power Derating Curve Fig. 4 - Reverse Power Capability 100 Transient Thermal Impedance (°C/W) 6000 Load Dump Power (W) 5000 4000 3000 2000 1000 0 50 25 150 Input Peak Pulse Current (%) 100 10 Case Temperature (°C) 75 100 150 125 175 RθJA 10 RθJC 1 0.1 0.01 0.01 0.1 1 10 100 Case Temperature (°C) t - Pulse Width (s) Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 5 - Typical Transient Thermal Impedance tr = 10 μs TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td 0 0 1.0 2.0 3.0 4.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 26-Oct-2021 Document Number: 87735 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10AT thru SM6S43AT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AC 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.366 (9.3) 0.343 (8.7) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.406 (10.3) 0.382 (9.7) Lead 1 0.197 (5.0) 0.185 (4.7) 0.004 (0.10) (NOM.) Lead 2 / metal heatsink 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) Revision: 26-Oct-2021 Document Number: 87735 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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