SM8S10A thru SM8S43A
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Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in unidirectional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
Anode
• High surge capability
Cathode
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR
11.1 V to 52.8 V
VWM
10 V to 43 V
PPPM (10 x 1000 μs)
6600 W
PPPM (10 x 10 000 μs)
5200 W
PD
8W
IFSM
700 A
TJ max.
175 °C
Polarity
Unidirectional
Package
DO-218AB
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
SYMBOL
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
PPPM
VALUE
6600
5200
UNIT
W
PD
8.0
W
IPPM (1)
See next table
A
IFSM
700
A
TJ, TSTG
-55 to +175
°C
Note
(1) Non-repetitive current pulse derated above T = 25 °C
A
Revision: 26-Oct-2021
Document Number: 88387
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10A thru SM8S43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
VBR (V)
MAXIMUM
MAXIMUM
REVERSE
REVERSE
LEAKAGE
LEAKAGE
AT VWM
AT VWM
TJ = 175 °C
ID (μA)
ID (μA)
MAX. PEAK
PULSE
CURRENT
AT 10/1000 μs
WAVEFORM
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
TYPICAL
TEMP.
COEFFICIENT
OF VBR (1)
αT
(%/°C)
MIN.
NOM.
STAND-OFF
TEST
CURRENT VOLTAGE
VWM
IT
(mA)
(V)
MAX.
SM8S10A
11.1
11.7
12.3
5.0
10.0
15
250
388
17.0
0.069
SM8S11A
12.2
12.9
13.5
5.0
11.0
10
150
363
18.2
0.072
SM8S12A
13.3
14.0
14.7
5.0
12.0
10
150
332
19.9
0.074
SM8S13A
14.4
15.2
15.9
5.0
13.0
10
150
307
21.5
0.076
SM8S14A
15.6
16.4
17.2
5.0
14.0
10
150
284
23.2
0.078
SM8S15A
16.7
17.6
18.5
5.0
15.0
10
150
270
24.4
0.080
SM8S16A
17.8
18.8
19.7
5.0
16.0
10
150
254
26.0
0.081
SM8S17A
18.9
19.9
20.9
5.0
17.0
10
150
239
27.6
0.082
SM8S18A
20.0
21.1
22.1
5.0
18.0
10
150
226
29.2
0.083
SM8S20A
22.2
23.4
24.5
5.0
20.0
10
150
204
32.4
0.085
SM8S22A
24.4
25.7
26.9
5.0
22.0
10
150
186
35.5
0.086
SM8S24A
26.7
28.1
29.5
5.0
24.0
10
150
170
38.9
0.087
SM8S26A
28.9
30.4
31.9
5.0
26.0
10
150
157
42.1
0.088
SM8S28A
31.1
32.8
34.4
5.0
28.0
10
150
145
45.4
0.089
SM8S30A
33.3
35.1
36.8
5.0
30.0
10
150
136
48.4
0.090
SM8S33A
36.7
38.7
40.6
5.0
33.0
10
150
124
53.3
0.091
SM8S36A
40.0
42.1
44.2
5.0
36.0
10
150
114
58.1
0.091
SM8S40A
44.4
46.8
49.1
5.0
40.0
10
150
102
64.5
0.092
SM8S43A
47.8
50.3
52.8
5.0
43.0
10
150
95.1
69.4
0.093
DEVICE
TYPE
Notes
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
(1) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
VALUE
UNIT
RθJC
0.90
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
SM8S10AHE3_A/I (1)
UNIT WEIGHT (g)
2.605
PREFERRED PACKAGE CODE
I
BASE QUANTITY
DELIVERY MODE
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
Note
(1) AEC-Q101 qualified
Revision: 26-Oct-2021
Document Number: 88387
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10A thru SM8S43A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Reverse Surge Power (W)
Power Dissipation (W)
8.0
6.0
4.0
2.0
1000
0
50
0
150
100
200
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
100
Transient Thermal Impedance (°C/W)
6000
Load Dump Power (W)
5000
4000
3000
2000
1000
0
50
25
75
100
150
125
RθJA
10
RθJC
1
0.1
0.01
0.01
175
0.1
1
10
100
Case Temperature (°C)
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 5 - Typical Transient Thermal Impedance
tr = 10 μs
100 000
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
CJ - Junction Capacitance (pF)
150
Input Peak Pulse Current (%)
100
10
Case Temperature (°C)
100
Half Value - IPP
IPPM
2
50
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Zero Bias
10 000
Measured at Stand-Off
Voltage VWM
td
0
1000
0
10
20
30
40
10
15
20
25
30
35
40
t - Time (ms)
VWM - Reverse Stand-Off Voltage (V)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Junction Capacitance
45
Revision: 26-Oct-2021
Document Number: 88387
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10A thru SM8S43A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
Lead 1
0.138 (3.5)
0.098 (2.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 26-Oct-2021
Document Number: 88387
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000