SM8S40A-E3/2D

New Product SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop DO-218AB • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS VWM 10 V to 43 V PPPM (10 x 1000 μs) 6600 W TYPICAL APPLICATIONS PPPM (10 x 10 000 μs) 5200 W Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. PD 8W IFSM 700 A TJ max. 175 °C MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: Heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range UNIT 6600 with 10/1000 μs waveform Peak pulse power dissipation VALUE PPPM PD W 5200 8.0 W See next table A IFSM 700 A TJ, TSTG - 55 to + 175 °C IPPM (1) Note (1) Non-repetitive current pulse derated above T = 25 °C A Revision: 14-Sep-11 Document Number: 88387 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAXIMUM MAX. PEAK PULSE CURRENT CLAMPING VOLTAGE AT 10/1000 μs AT IPPM WAVEFORM (A) VC (V) MIN. MAX. TEST CURRENT IT (mA) SM8S10 11.1 13.6 5.0 10.0 15 250 351 18.8 SM8S10A 11.1 12.3 5.0 10.0 15 250 388 17.0 SM8S11 12.2 14.9 5.0 11.0 10 150 328 20.1 SM8S11A 12.2 13.5 5.0 11.0 10 150 363 18.2 SM8S12 13.3 16.3 5.0 12.0 10 150 300 22.0 SM8S12A 13.3 14.7 5.0 12.0 10 150 332 19.9 SM8S13 14.4 17.6 5.0 13.0 10 150 277 23.8 SM8S13A 14.4 15.9 5.0 13.0 10 150 307 21.5 SM8S14 15.6 19.1 5.0 14.0 10 150 256 25.8 DEVICE TYPE SM8S14A 15.6 17.2 5.0 14.0 10 150 284 23.2 SM8S15 16.7 20.4 5.0 15.0 10 150 245 26.9 SM8S15A 16.7 18.5 5.0 15.0 10 150 270 24.4 SM8S16 17.8 21.8 5.0 16.0 10 150 229 28.8 SM8S16A 17.8 19.7 5.0 16.0 10 150 254 26.0 SM8S17 18.9 23.1 5.0 17.0 10 150 216 30.5 SM8S17A 18.9 20.9 5.0 17.0 10 150 239 27.6 SM8S18 20.0 24.4 5.0 18.0 10 150 205 32.2 SM8S18A 20.0 22.1 5.0 18.0 10 150 226 29.2 SM8S20 22.2 27.1 5.0 20.0 10 150 184 35.8 SM8S20A 22.2 24.5 5.0 20.0 10 150 204 32.4 SM8S22 24.4 29.8 5.0 22.0 10 150 168 39.4 SM8S22A 24.4 26.9 5.0 22.0 10 150 186 35.5 SM8S24 26.7 32.6 5.0 24.0 10 150 153 43.0 SM8S24A 26.7 29.5 5.0 24.0 10 150 170 38.9 SM8S26 28.9 35.3 5.0 26.0 10 150 142 46.6 42.1 SM8S26A 28.9 31.9 5.0 26.0 10 150 157 SM8S28 31.1 38.0 5.0 28.0 10 150 132 50.1 SM8S28A 31.1 34.4 5.0 28.0 10 150 145 45.4 SM8S30 33.3 40.7 5.0 30.0 10 150 123 53.5 SM8S30A 33.3 36.8 5.0 30.0 10 150 136 48.4 SM8S33 36.7 44.9 5.0 33.0 10 150 112 59.0 SM8S33A 36.7 40.6 5.0 33.0 10 150 124 53.3 SM8S36 40.0 48.9 5.0 36.0 10 150 103 64.3 SM8S36A 40.0 44.2 5.0 36.0 10 150 114 58.1 SM8S40 44.4 54.3 5.0 40 10 150 92.4 71.4 SM8S40A 44.4 49.1 5.0 40 10 150 102 64.5 SM8S43 47.8 58.4 5.0 43 10 150 86 76.7 SM8S43A 47.8 52.8 5.0 43 10 150 95.1 69.4 Note • For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 14-Sep-11 Document Number: 88387 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL VALUE UNIT RJC 0.90 °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM8S10AHE3/2D (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 2.605 2D 750 13" diameter plastic tape and reel, anode towards the sprocket hole Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Input Peak Pulse Current (%) Power Dissipation (W) 8.0 6.0 4.0 2.0 tr = 10 μs TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td 0 0 50 0 150 100 10 20 30 t - Time (ms) Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform 6000 40 10 000 Reverse Surge Power (W) 5000 Load Dump Power (W) 0 200 Case Temperature (°C) 4000 3000 2000 1000 1000 0 25 50 75 100 125 150 175 100 10 Case Temperature (°C) Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 4 - Reverse Power Capability Revision: 14-Sep-11 Document Number: 88387 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor 100 000 CJ - Junction Capacitance (pF) Transient Thermal Impedance (°C/W) 100 RθJA 10 RθJC 1 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Zero Bias 10 000 Measured at Stand-Off Voltage VWM 1000 0.01 0.01 0.1 1 10 10 100 15 20 25 30 35 40 t - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Typical Junction Capacitance 45 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) Lead 1 0.138 (3.5) 0.098 (2.5) 0.016 (0.4) MIN. Lead 2/Metal Heatsink Revision: 14-Sep-11 0.091 (2.3) 0.067 (1.7) 0.098 (2.5) 0.059 (1.5) 0.028 (0.7) 0.020 (0.5) Document Number: 88387 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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