SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
High Power Density Surface-Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
Available
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
LINKS TO ADDITIONAL RESOURCES
3D 3D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
3D Models
PRIMARY CHARACTERISTICS
VBR
6.4 V to 49.1 V
VWM
5.0 V to 40 V
PPPM
500 W
IFSM (uni-directional only)
40 A
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
Package
SMA (DO-214AC)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs
waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional
only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
500
W
IPPM
See next table
A
IFSM
40
A
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 20-Jul-2020
Document Number: 88875
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
SMA5J5.0A (5)
SMA5J6.0A
SMA5J6.5A
SMA5J7.0A
SMA5J7.5A
SMA5J8.0A
SMA5J8.5A
SMA5J9.0A
SMA5J10A
SMA5J11A
SMA5J12A
SMA5J13A
SMA5J14A
SMA5J15A
SMA5J16A
SMA5J17A
SMA5J18A
SMA5J20A
SMA5J22A
SMA5J24A
SMA5J26A
SMA5J28A
SMA5J30A
SMA5J33A
SMA5J36A
SMA5J40A
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (V) (1)
UNI
BI
MIN.
MAX.
TEST
CURRENT
IT
(mA)
5AE
5AG
5AK
5AM
5AP
5AR
5AT
5AV
5AX
5AZ
5BE
5BG
5BK
5BM
5BP
5BR
5BT
5BV
5BX
5BZ
5CE
5CG
5CK
5CM
5CP
5CR
5AE
5AG
5AK
5AM
5AP
5AR
5AT
5AV
5AX
5AZ
5BE
5BG
5BK
5BM
5BP
5BR
5BT
5BV
5BX
5BZ
5CE
5CG
5CK
5CM
5CP
5CR
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
VWM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
800
800
500
200
100
50
10
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
54.3
48.5
44.6
41.7
38.8
36.8
34.7
32.5
29.4
27.5
25.1
23.3
21.6
20.5
19.2
18.1
17.1
15.4
14.1
12.9
11.9
11.0
10.3
9.4
8.6
7.8
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types having V
WM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMA5J5.0CA, the maximum V
BR is 7.25 V
(6) V = 3.5 V at I = 25 A (uni-directional only)
F
F
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1)
Typical thermal resistance, junction to lead
SYMBOL
RθJA
RθJL
VALUE
80
25
UNIT
°C/ W
Note
Mounted on minimum recommended pad layout
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
SMA5J5.0A-E3/61
0.064
SMA5J5.0A-M3/61
SMA5J5.0A-E3/5A
0.064
SMA5J5.0A-M3/5A
SMA5J5.0AHE3_A/H (1)
0.064
SMA5J5.0AHM3_A/H (1)
(1)
SMA5J5.0AHE3_A/I
0.064
SMA5J5.0AHM3_A/I (1)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
61
1800
7" diameter plastic tape and reel
5A
7500
13" diameter plastic tape and reel
H
1800
7" diameter plastic tape and reel
I
7500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 20-Jul-2020
Document Number: 88875
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
1.0 µs
10 µs
100 µs
1.0 ms
TJ = 25 °C
f = 1.0 MHz
Uni-Directional
Bi-Directional
Measured at
Zero Bias
1000
100
Measured at Stand-Off
Voltage VWM
10
10 ms
1
10
100
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
0.1
0.1 µs
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
75
50
25
1
0.01
0
0
25
50
75
100
125
150
175
10
200
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
td
0
0
1.0
2.0
3.0
4.0
10
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Use Only
Revision: 20-Jul-2020
Document Number: 88875
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 20-Jul-2020
Document Number: 88875
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2021
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Document Number: 91000