SMA5J40CHE3/5A

SMA5J5.0A thru SMA5J40CA www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-214AC (SMA) PRIMARY CHARACTERISTICS VBR 6.4 V to 49.1 V VWM 5.0 V to 40 V PPPM 500 W IFSM (uni-directional only) 40 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AC (SMBA) DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SMA5J40CA). Electrical characteristics apply in both directions. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade  Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 500 W IPPM See next table A IFSM 40 A TJ, TSTG - 55 to + 150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 24-Oct-12 Document Number: 88875 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMA5J5.0A thru SMA5J40CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE SMA5J5.0A (5) SMA5J6.0A SMA5J6.5A SMA5J7.0A SMA5J7.5A SMA5J8.0A SMA5J8.5A SMA5J9.0A SMA5J10A SMA5J11A SMA5J12A SMA5J13A SMA5J14A SMA5J15A SMA5J16A SMA5J17A SMA5J18A SMA5J20A SMA5J22A SMA5J24A SMA5J26A SMA5J28A SMA5J30A SMA5J33A SMA5J36A SMA5J40A DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (V)(1) UNI BI MIN. MAX. TEST CURRENT IT (mA) 5AE 5AG 5AK 5AM 5AP 5AR 5AT 5AV 5AX 5AZ 5BE 5BG 5BK 5BM 5BP 5BR 5BT 5BV 5BX 5BZ 5CE 5CG 5CK 5CM 5CP 5CR 5AE 5AG 5AK 5AM 5AP 5AR 5AT 5AV 5AX 5AZ 5BE 5BG 5BK 5BM 5BP 5BR 5BT 5BV 5BX 5BZ 5CE 5CG 5CK 5CM 5CP 5CR 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 7.07 7.37 7.98 8.60 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (3) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 800 800 500 200 100 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 54.3 48.5 44.6 41.7 38.8 36.8 34.7 32.5 29.4 27.5 25.1 23.3 21.6 20.5 19.2 18.1 17.1 15.4 14.1 12.9 11.9 11.0 10.3 9.4 8.6 7.8 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 Notes (1) Pulse test: t  50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMA5J5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V at I = 25 A (uni-directional only) F F THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead SYMBOL VALUE UNIT RJA RJL 80 25 °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N SMA5J5.0A-E3/61 SMA5J5.0A-E3/5A SMA5J5.0AHE3/61 (1) SMA5J5.0AHE3/5A (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 0.064 0.064 0.064 61 5A 61 5A 1800 7500 1800 7500 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 24-Oct-12 Document Number: 88875 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMA5J5.0A thru SMA5J40CA www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 1 1.0 µs 10 µs 100 µs 1.0 ms TJ = 25 °C f = 1.0 MHz Uni-Directional Bi-Directional Measured at Zero Bias 1000 100 Measured at Stand-Off Voltage VWM 10 10 ms 1 10 100 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 0.1 µs CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 1 0.01 0 0 25 50 75 100 125 150 175 10 200 0.1 1 10 100 1000 TJ - Initial Temperature (°C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 td 0 0 1.0 2.0 3.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 24-Oct-12 4.0 10 1 5 10 50 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Use Only Document Number: 88875 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMA5J5.0A thru SMA5J40CA www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 24-Oct-12 Document Number: 88875 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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