SMA6J5.0A thru SMA6J28A
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Vishay General Semiconductor
Surface-Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Available in unidirectional polarity only
• Excellent clamping capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMA (DO-214AC)
LINKS TO ADDITIONAL RESOURCES
3D 3D
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
3D Models
PRIMARY CHARACTERISTICS
VBR
6.4 V to 34.4 V
VWM
5.0 V to 28 V
PPPM (10 x 1000 μs)
600 W
PPPM (8 x 20 μs)
4000 W
PD at TA = 50 °C
4W
IFSM
50 A
TJ max.
150 °C
Polarity
Unidirectional
Package
SMA (DO-214AC)
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)
Peak pulse power dissipation with a 8/20 μs waveform
SYMBOL
PPPM
VALUE
600
4000
UNIT
W
Peak pulse current with a 10/1000 μs waveform (1)(2)
Peak pulse current with a 8/20 μs waveform
Power dissipation on infinite heatsink, TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
IPPM
See next table
A
PD
4.0
W
IFSM
50
A
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 1 and derated above T = 25 °C per fig. 2
A
(2) Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 17-Sep-2021
Document Number: 89115
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
INDEX OF SYMBOLS
I
SYMBOL
IF
PARAMETER
VWM
Stand-off voltage
VBR
Breakdown voltage
VC
Clamping voltage
ID
Leakage current at VWM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
RD
Dynamic resistance
VWM
VBR
VC
ID VF
IT
V
IPP
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
MIN.
MAX.
V
MAXIMUM
REVERSE
LEAKAGE
ID AT VWM
25 °C
mA
STAND-OFF
VOLTAGE
VWM
85 °C
μA
VC AT IPP
RD (2)
VC AT IPP
10/1000 μs
RD (2)
αT (3)
8/20 μs
MAX.
MAX.
MAX.
V
V
A
Ω
V
A
Ω
10-4/°C
9.1
65.9
0.031
13.4
298
0.021
5.7
SMA6J5.0A
6AE
6.4
7.07
10
150
375
5.0
SMA6J6.0A
6AG
6.7
7.41
10
600
1500
6.0
9.5
63.2
0.033
13.7
290
0.022
5.9
SMA6J6.5A
6AK
7.2
7.96
10
100
250
6.5
10.2
58.8
0.038
14.5
276
0.024
6.1
SMA6J7.5A
6AP
8.33
9.21
1
50
125
7.5
11.8
50.8
0.051
17.0
235
0.033
6.5
SMA6J8.0A
6AR
8.89
9.83
1
20
50
8.0
12.5
48.0
0.056
18.2
220
0.038
7.0
SMA6J8.5A
6AT
9.4
10.4
1
20
50
8.5
13.3
45.1
0.064
18.7
205
0.040
7.3
SMA6J10A
6AX
11.1
12.3
1
1
5
10
15.7
38.2
0.089
19.6
184
0.040
7.8
SMA6J11A
6AZ
12.2
13.5
1
1
5
11
17.2
34.8
0.107
21.5
172
0.047
8.1
SMA6J12A
6BE
13.3
14.7
1
0.2
1
12
18.8
31.9
0.128
23.5
157
0.056
8.3
SMA6J13A
6BG
14.4
15.9
1
0.2
1
13
20.4
29.4
0.153
23.9
147
0.054
8.4
SMA6J15A
6BM
16.7
18.5
1
0.2
1
15
23.6
25.4
0.201
27.7
123
0.075
8.8
SMA6J16A
6BP
17.8
19.7
1
0.2
1
16
25.2
23.8
0.229
29.5
119
0.083
8.8
SMA6J17A
6BR
18.9
20.9
1
0.2
1
17
26.7
22.5
0.259
31.4
111
0.094
9.0
SMA6J18A
6BT
20.0
22.1
1
0.2
1
18
28.3
21.2
0.292
33.2
102
0.109
9.2
SMA6J20A
6BV
22.2
24.5
1
0.2
1
20
31.4
19.1
0.361
36.8
93
0.132
9.4
SMA6J22A
6BX
24.4
26.9
1
0.2
1
22
34.5
17.4
0.437
40.4
89
0.152
9.5
SMA6J24A
6BZ
26.7
29.5
1
0.2
1
24
37.8
15.9
0.523
44.3
80
0.185
9.6
SMA6J26A
6CE
28.9
31.9
1
0.2
1
26
40.9
14.7
0.614
47.9
75
0.213
9.7
SMA6J28A
6CG
31.1
34.4
1
0.2
1
28
44.0
13.6
0.704
51.6
68
0.253
9.8
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) To calculate maximum clamping voltage at other surge currents, use the following formula: V
CLmax. = RD x IPP + VBRmax.
(3) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)
(4) V = 3.5 V at I = 25 A, pulse test: 300 µs pulse width
F
F
Revision: 17-Sep-2021
Document Number: 89115
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient (1)
RθJA
120
Typical thermal resistance, junction to lead
RθJL
25
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMA6J5.0A-E3/61
0.064
61
1800
7" diameter plastic tape and reel
SMA6J5.0A-E3/5A
0.064
5A
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
IPPM - Peak Pulse Current (%) IRSM
PPPM - Peak Pulse Power (kW)
100
10
1
tr = 10 µs
tr = 8 µs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
td = 1000 µs
td = 20 µs
td
0
10
1
100
1000
10 000
0
2.0
1.0
3.0
Pulse Width (µs) - ½ IPP Exponential Waveform
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
4.0
10 000
100
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
0.1
0.1
150
75
Measured at Zero Bias
1000
50
25
Measured at Stand-off
Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
0
25
50
75
100
125
150
175
200
1
10
TJ - Initial Temperature
Reverse Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
100
Revision: 17-Sep-2021
Document Number: 89115
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
100
Forward Current (A)
SMA6J5.0A to SMA6J8.0A
TA = 150 °C
10
SMA6J8.5A to SMA6J28A
TA = 150 °C
1
0.1
SMA6J5.0A to SMA6J28A
TA = 25 °C
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
1000
100
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
Forward Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 17-Sep-2021
Document Number: 89115
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000