SMA6J20A-M3/61

SMA6J5.0A thru SMA6J28A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Available in unidirectional polarity only • Excellent clamping capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMA (DO-214AC) LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. 3D Models PRIMARY CHARACTERISTICS VBR 6.4 V to 34.4 V VWM 5.0 V to 28 V PPPM (10 x 1000 μs) 600 W PPPM (8 x 20 μs) 4000 W PD at TA = 50 °C 4W IFSM 50 A TJ max. 150 °C Polarity Unidirectional Package SMA (DO-214AC) MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) Peak pulse power dissipation with a 8/20 μs waveform SYMBOL PPPM VALUE 600 4000 UNIT W Peak pulse current with a 10/1000 μs waveform (1)(2) Peak pulse current with a 8/20 μs waveform Power dissipation on infinite heatsink, TA = 50 °C Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range IPPM See next table A PD 4.0 W IFSM 50 A TJ, TSTG -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 1 and derated above T = 25 °C per fig. 2 A (2) Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 17-Sep-2021 Document Number: 89115 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMA6J5.0A thru SMA6J28A www.vishay.com Vishay General Semiconductor INDEX OF SYMBOLS I SYMBOL IF PARAMETER VWM Stand-off voltage VBR Breakdown voltage VC Clamping voltage ID Leakage current at VWM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop RD Dynamic resistance VWM VBR VC ID VF IT V IPP ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) MIN. MAX. V MAXIMUM REVERSE LEAKAGE ID AT VWM 25 °C mA STAND-OFF VOLTAGE VWM 85 °C μA VC AT IPP RD (2) VC AT IPP 10/1000 μs RD (2) αT (3) 8/20 μs MAX. MAX. MAX. V V A Ω V A Ω 10-4/°C 9.1 65.9 0.031 13.4 298 0.021 5.7 SMA6J5.0A 6AE 6.4 7.07 10 150 375 5.0 SMA6J6.0A 6AG 6.7 7.41 10 600 1500 6.0 9.5 63.2 0.033 13.7 290 0.022 5.9 SMA6J6.5A 6AK 7.2 7.96 10 100 250 6.5 10.2 58.8 0.038 14.5 276 0.024 6.1 SMA6J7.5A 6AP 8.33 9.21 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5 SMA6J8.0A 6AR 8.89 9.83 1 20 50 8.0 12.5 48.0 0.056 18.2 220 0.038 7.0 SMA6J8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 45.1 0.064 18.7 205 0.040 7.3 SMA6J10A 6AX 11.1 12.3 1 1 5 10 15.7 38.2 0.089 19.6 184 0.040 7.8 SMA6J11A 6AZ 12.2 13.5 1 1 5 11 17.2 34.8 0.107 21.5 172 0.047 8.1 SMA6J12A 6BE 13.3 14.7 1 0.2 1 12 18.8 31.9 0.128 23.5 157 0.056 8.3 SMA6J13A 6BG 14.4 15.9 1 0.2 1 13 20.4 29.4 0.153 23.9 147 0.054 8.4 SMA6J15A 6BM 16.7 18.5 1 0.2 1 15 23.6 25.4 0.201 27.7 123 0.075 8.8 SMA6J16A 6BP 17.8 19.7 1 0.2 1 16 25.2 23.8 0.229 29.5 119 0.083 8.8 SMA6J17A 6BR 18.9 20.9 1 0.2 1 17 26.7 22.5 0.259 31.4 111 0.094 9.0 SMA6J18A 6BT 20.0 22.1 1 0.2 1 18 28.3 21.2 0.292 33.2 102 0.109 9.2 SMA6J20A 6BV 22.2 24.5 1 0.2 1 20 31.4 19.1 0.361 36.8 93 0.132 9.4 SMA6J22A 6BX 24.4 26.9 1 0.2 1 22 34.5 17.4 0.437 40.4 89 0.152 9.5 SMA6J24A 6BZ 26.7 29.5 1 0.2 1 24 37.8 15.9 0.523 44.3 80 0.185 9.6 SMA6J26A 6CE 28.9 31.9 1 0.2 1 26 40.9 14.7 0.614 47.9 75 0.213 9.7 SMA6J28A 6CG 31.1 34.4 1 0.2 1 28 44.0 13.6 0.704 51.6 68 0.253 9.8 Notes (1) Pulse test: t ≤ 50 ms p (2) To calculate maximum clamping voltage at other surge currents, use the following formula: V CLmax. = RD x IPP + VBRmax. (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25) (4) V = 3.5 V at I = 25 A, pulse test: 300 µs pulse width F F Revision: 17-Sep-2021 Document Number: 89115 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMA6J5.0A thru SMA6J28A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient (1) RθJA 120 Typical thermal resistance, junction to lead RθJL 25 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMA6J5.0A-E3/61 0.064 61 1800 7" diameter plastic tape and reel SMA6J5.0A-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) IPPM - Peak Pulse Current (%) IRSM PPPM - Peak Pulse Power (kW) 100 10 1 tr = 10 µs tr = 8 µs Peak Value IPPM 100 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM Half Value - IPP IPPM 2 50 td = 1000 µs td = 20 µs td 0 10 1 100 1000 10 000 0 2.0 1.0 3.0 Pulse Width (µs) - ½ IPP Exponential Waveform t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 4.0 10 000 100 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 0.1 0.1 150 75 Measured at Zero Bias 1000 50 25 Measured at Stand-off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0 0 25 50 75 100 125 150 175 200 1 10 TJ - Initial Temperature Reverse Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance 100 Revision: 17-Sep-2021 Document Number: 89115 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMA6J5.0A thru SMA6J28A www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) 100 Forward Current (A) SMA6J5.0A to SMA6J8.0A TA = 150 °C 10 SMA6J8.5A to SMA6J28A TA = 150 °C 1 0.1 SMA6J5.0A to SMA6J28A TA = 25 °C 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1000 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 Forward Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 17-Sep-2021 Document Number: 89115 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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