SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
High Power Density Surface-Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in unidirectional and bidirectional
Available
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
LINKS TO ADDITIONAL RESOURCES
3D 3D
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D Models
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
VBR (unidirectional)
6.4 V to 49.1 V
VBR (bidirectional)
6.4 V to 49.1 V
VWM
5.0 V to 40 V
PPPM (unidirectional)
1000 W
PPPM (bidirectional)
800 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
Polarity
Unidirectional, bidirectional
Package
SMB (DO-214AA)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for unidirectional types the color band denotes
cathode end, no marking on bidirectional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(fig. 1)
SYMBOL
unidirectional
bidirectional
PPPM (1)(2)
VALUE
1000
800
UNIT
W
Peak pulse current with a 10/1000 μs waveform
IPPM (1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
IFSM (2)
100
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 29-Sep-2022
Document Number: 88422
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
UNIDIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
SMB10J5.0A
1AE
6.40
7.07
10
5.0
1000
MAXIMUM
PEAK
PULSE SURGE
CURRENT
IPPM (2)
(A)
108.7
SMB10J6.0A
1AG
6.67
7.37
10
6.0
1000
97.1
10.3
SMB10J6.5A
1AK
7.22
7.98
10
6.5
500
89.3
11.2
SMB10J7.0A
1AM
7.78
8.60
10
7.0
200
83.3
12.0
SMB10J7.5A
1AP
8.33
9.21
1.0
7.5
100
77.5
12.9
SMB10J8.0A
1AR
8.89
9.83
1.0
8.0
50
73.5
13.6
SMB10J8.5A
1AT
9.44
10.4
1.0
8.5
20
69.4
14.4
SMB10J9.0A
1AV
10.0
11.1
1.0
9.0
10
64.9
15.4
SMB10J10A
1AX
11.1
12.3
1.0
10
5.0
58.8
17.0
SMB10J11A
1AZ
12.2
13.5
1.0
11
5.0
54.9
18.2
SMB10J12A
1BE
13.3
14.7
1.0
12
5.0
50.3
19.9
SMB10J13A
1BG
14.4
15.9
1.0
13
1.0
46.5
21.5
SMB10J14A
1BK
15.6
17.2
1.0
14
1.0
43.1
23.2
SMB10J15A
1BM
16.7
18.5
1.0
15
1.0
41.0
24.4
SMB10J16A
1BP
17.8
19.7
1.0
16
1.0
38.5
26.0
SMB10J17A
1BR
18.9
20.9
1.0
17
1.0
36.2
27.6
SMB10J18A
1BT
20.0
22.1
1.0
18
1.0
34.2
29.2
SMB10J20A
1BV
22.2
24.5
1.0
20
1.0
30.9
32.4
SMB10J22A
1BX
24.4
26.9
1.0
22
1.0
28.2
35.5
SMB10J24A
1BZ
26.7
29.5
1.0
24
1.0
25.7
38.9
SMB10J26A
1CE
28.9
31.9
1.0
26
1.0
23.8
42.1
SMB10J28A
1CG
31.1
34.4
1.0
28
1.0
22.0
45.4
SMB10J30A
1CK
33.3
36.8
1.0
30
1.0
20.7
48.4
SMB10J33A
1CM
36.7
40.6
1.0
33
1.0
18.8
53.3
SMB10J36A
1CP
40.0
44.2
1.0
36
1.0
17.2
58.1
SMB10J40A
1CR
44.4
49.1
1.0
40
1.0
15.5
64.5
DEVICE
TYPE
DEVICE
MARKING
CODE
MIN.
MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
9.2
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
(4) V = 3.5 V at I = 50 A (uni-directional only)
F
F
Revision: 29-Sep-2022
Document Number: 88422
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
BIDIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
SMB8J5.0CA
SMB8J6.0CA
SMB8J6.5CA
SMB8J7.0CA
SMB8J7.5CA
SMB8J8.0CA
SMB8J8.5CA
SMB8J9.0CA
SMB8J10CA
SMB8J11CA
SMB8J12CA
SMB8J13CA
SMB8J14CA
SMB8J15CA
SMB8J16CA
SMB8J17CA
SMB8J18CA
SMB8J20CA
SMB8J22CA
SMB8J24CA
SMB8J26CA
SMB8J28CA
SMB8J30CA
SMB8J33CA
SMB8J36CA
SMB8J40CA
DEVICE
MARKING
CODE
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN.
MAX.
6.40
7.25
6.67
7.37
7.22
7.98
7.78
8.60
8.33
9.21
8.89
9.83
9.44
10.4
10.0
11.1
11.1
12.3
12.2
13.5
13.3
14.7
14.4
15.9
15.6
17.2
16.7
18.5
17.8
19.7
18.9
20.9
20.0
22.1
22.2
24.5
24.4
26.9
26.7
29.5
28.9
31.9
31.1
34.4
33.3
36.8
36.7
40.6
40.0
44.2
44.4
49.1
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
2000
2000
1000
400
200
100
40
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE CURRENT
IPPM (2)
(A)
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1)
Typical thermal resistance, junction to lead
SYMBOL
RθJA
RθJL
VALUE
72
20
UNIT
°C/ W
Note
Mounted on minimum recommended pad layout
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
SMB10J5.0A-E3/52
SMB10J5.0A-M3/52
SMB10J5.0A-E3/5B
SMB10J5.0A-M3/5B
SMB10J5.0AHE3_B/H (1)
SMB10J5.0AHM3_B/H (1)
SMB10J5.0AHE3_B/I (1)
SMB10J5.0AHM3_B/I (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.106
52
750
7" diameter plastic tape and reel
0.106
5B
3200
13" diameter plastic tape and reel
0.106
H
750
7" diameter plastic tape and reel
0.106
I
3200
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 29-Sep-2022
Document Number: 88422
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
10
SMB10J5.0 SMB10J40A
1
SMB8J5.0C SMB8J40CA
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
Measured at
Zero Bias
1000
VR, Measured at
Stand-Off
Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Bi-Directional
100 µs
1.0 ms
10
10 ms
1
100
10
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
75
50
25
10
1.0
0
0
25
50
75
100
125
150
175
0.01
200
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
td
10
0
0
1.0
2.0
3.0
4.0
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 29-Sep-2022
Document Number: 88422
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 29-Sep-2022
Document Number: 88422
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000