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SMB8J22CAHE3/5B

SMB8J22CAHE3/5B

  • 厂商:

    TFUNK(威世)

  • 封装:

    SMB(DO-214AA)

  • 描述:

    TVS DIODE 22VWM 35.5VC SMB

  • 详情介绍
  • 数据手册
  • 价格&库存
SMB8J22CAHE3/5B 数据手册
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Available in unidirectional and bidirectional Available • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) LINKS TO ADDITIONAL RESOURCES 3D 3D • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS VBR (unidirectional) 6.4 V to 49.1 V VBR (bidirectional) 6.4 V to 49.1 V VWM 5.0 V to 40 V PPPM (unidirectional) 1000 W PPPM (bidirectional) 800 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMB (DO-214AA) Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) SYMBOL unidirectional bidirectional PPPM (1)(2) VALUE 1000 800 UNIT W Peak pulse current with a 10/1000 μs waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 100 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 29-Sep-2022 Document Number: 88422 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor UNIDIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT (1) (V) SMB10J5.0A 1AE 6.40 7.07 10 5.0 1000 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 108.7 SMB10J6.0A 1AG 6.67 7.37 10 6.0 1000 97.1 10.3 SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 89.3 11.2 SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0 SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9 SMB10J8.0A 1AR 8.89 9.83 1.0 8.0 50 73.5 13.6 SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4 SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 64.9 15.4 SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0 SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 54.9 18.2 SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9 SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5 SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2 SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4 SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0 SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6 SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2 SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4 SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5 SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9 SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1 SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4 SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4 SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3 SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1 SMB10J40A 1CR 44.4 49.1 1.0 40 1.0 15.5 64.5 DEVICE TYPE DEVICE MARKING CODE MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) V = 3.5 V at I = 50 A (uni-directional only) F F Revision: 29-Sep-2022 Document Number: 88422 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor BIDIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE SMB8J5.0CA SMB8J6.0CA SMB8J6.5CA SMB8J7.0CA SMB8J7.5CA SMB8J8.0CA SMB8J8.5CA SMB8J9.0CA SMB8J10CA SMB8J11CA SMB8J12CA SMB8J13CA SMB8J14CA SMB8J15CA SMB8J16CA SMB8J17CA SMB8J18CA SMB8J20CA SMB8J22CA SMB8J24CA SMB8J26CA SMB8J28CA SMB8J30CA SMB8J33CA SMB8J36CA SMB8J40CA DEVICE MARKING CODE 1AE 1AG 1AK 1AM 1AP 1AR 1AT 1AV 1AX 1AZ 1BE 1BG 1BK 1BM 1BP 1BR 1BT 1BV 1BX 1BZ 1CE 1CG 1CK 1CM 1CP 1CR BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.40 7.25 6.67 7.37 7.22 7.98 7.78 8.60 8.33 9.21 8.89 9.83 9.44 10.4 10.0 11.1 11.1 12.3 12.2 13.5 13.3 14.7 14.4 15.9 15.6 17.2 16.7 18.5 17.8 19.7 18.9 20.9 20.0 22.1 22.2 24.5 24.4 26.9 26.7 29.5 28.9 31.9 31.1 34.4 33.3 36.8 36.7 40.6 40.0 44.2 44.4 49.1 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) 2000 2000 1000 400 200 100 40 20 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 87.0 77.7 71.4 66.7 62.0 58.8 55.6 51.9 47.1 44.0 40.2 37.2 34.5 32.8 30.8 29.0 27.4 24.7 22.5 20.6 19.0 17.6 16.5 15.0 13.8 12.4 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead SYMBOL RθJA RθJL VALUE 72 20 UNIT °C/ W Note Mounted on minimum recommended pad layout (1) ORDERING INFORMATION (Example) PREFERRED P/N SMB10J5.0A-E3/52 SMB10J5.0A-M3/52 SMB10J5.0A-E3/5B SMB10J5.0A-M3/5B SMB10J5.0AHE3_B/H (1) SMB10J5.0AHM3_B/H (1) SMB10J5.0AHE3_B/I (1) SMB10J5.0AHM3_B/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.106 52 750 7" diameter plastic tape and reel 0.106 5B 3200 13" diameter plastic tape and reel 0.106 H 750 7" diameter plastic tape and reel 0.106 I 3200 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 29-Sep-2022 Document Number: 88422 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 10 SMB10J5.0 SMB10J40A 1 SMB8J5.0C SMB8J40CA 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Bi-Directional 100 µs 1.0 ms 10 10 ms 1 100 10 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 10 1.0 0 0 25 50 75 100 125 150 175 0.01 200 0.1 1 10 100 1000 TJ - Initial Temperature (°C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Forward Surge Current Revision: 29-Sep-2022 Document Number: 88422 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 29-Sep-2022 Document Number: 88422 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
SMB8J22CAHE3/5B
物料型号:SMB10(8)J5.0(C)A至SMB10(8)J40(C)A

器件简介: - 这些是高功率密度表面贴装TRANSZORB®瞬态电压抑制二极管。 - 提供单向和双向版本。 - 具有低轮廓封装,适合自动化放置。 - 玻璃钝化芯片结,符合RoHS标准,无卤素。

引脚分配: - 封装类型为SMB(DO-214AA)。 - 对于单向类型,色环表示阴极端,双向类型没有标记。

参数特性: - 击穿电压(VBR)在6.4V至49.1V之间。 - 工作电压(VWM)在5.0V至40V之间。 - 单向和双向的峰值脉冲功率耗散(Pppm)分别为1000W和800W。 - 单向型号的最大峰值脉冲电流(IFsm)为100A。 - 最高工作温度(Tmax.)为150°C。

功能详解: - 用于保护敏感电子设备免受由感应负载切换和IC、MOSFET、传感器信号线上的照明引起的电压瞬态。 - 具有出色的钳位能力、非常快的响应时间和低增量浪涌电阻。

应用信息: - 适用于消费电子、计算机、工业、汽车和电信领域的应用。

封装信息: - 封装符合UL 94 V-0阻燃等级。 - 提供RoHS兼容的商业级和无卤素RoHS兼容的商业级产品。 - 还提供符合AEC-Q101标准的汽车订购代码。

订购信息: - 提供了不同包装代码和基础数量的订购示例。

注意事项: - 文档可能会在不通知的情况下更改。 - 产品和文档受特定免责声明的约束。
SMB8J22CAHE3/5B 价格&库存

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