SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
High Power Density Surface-Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in unidirectional and bidirectional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
SMB (DO-214AA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
LINKS TO ADDITIONAL RESOURCES
3D 3D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLCIATIONS
3D Models
PRIMARY CHARACTERISTICS
VBR (unidirectional)
6.4 V to 49.1 V
VBR (bidirectional)
6.4 V to 49.1 V
VWM
5.0 V to 40 V
PPPM (unidirectional)
1000 W
PPPM (bidirectional)
800 W
IFSM (unidirectional only)
100 A
TJ max.
150 °C
Polarity
Unidirectional, bidirectional
Package
SMB (DO-214AA)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: for unidirectional types the color band denotes
cathode end, no marking on bidirectional types
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
SYMBOL
unidirectional
bidirectional
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave unidirectional only
Operating junction and storage temperature range
PPPM (1)(2)
IPPM (1)
IFSM
(2)
TJ, TSTG
VALUE
1000
800
UNIT
W
See next table
A
100
A
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 20-Jul-2020
Document Number: 89424
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
UNIDIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (V) (1)
MIN.
MAX.
TEST CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
PEAK PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
SMB10J5.0A
1AE
6.40
7.07
10
5.0
1000
108.7
9.2
SMB10J6.0A
1AG
6.67
7.37
10
6.0
1000
97.1
10.3
SMB10J6.5A
1AK
7.22
7.98
10
6.5
500
89.3
11.2
SMB10J7.0A
1AM
7.78
8.60
10
7.0
200
83.3
12.0
SMB10J7.5A
1AP
8.33
9.21
1.0
7.5
100
77.5
12.9
SMB10J8.0A
1AR
8.89
9.83
1.0
8.0
50
73.5
13.6
SMB10J8.5A
1AT
9.44
10.4
1.0
8.5
20
69.4
14.4
SMB10J9.0A
1AV
10.0
11.1
1.0
9.0
10
64.9
15.4
SMB10J10A
1AX
11.1
12.3
1.0
10
5.0
58.8
17.0
SMB10J11A
1AZ
12.2
13.5
1.0
11
5.0
54.9
18.2
SMB10J12A
1BE
13.3
14.7
1.0
12
5.0
50.3
19.9
SMB10J13A
1BG
14.4
15.9
1.0
13
1.0
46.5
21.5
SMB10J14A
1BK
15.6
17.2
1.0
14
1.0
43.1
23.2
SMB10J15A
1BM
16.7
18.5
1.0
15
1.0
41.0
24.4
SMB10J16A
1BP
17.8
19.7
1.0
16
1.0
38.5
26.0
SMB10J17A
1BR
18.9
20.9
1.0
17
1.0
36.2
27.6
SMB10J18A
1BT
20.0
22.1
1.0
18
1.0
34.2
29.2
SMB10J20A
1BV
22.2
24.5
1.0
20
1.0
30.9
32.4
SMB10J22A
1BX
24.4
26.9
1.0
22
1.0
28.2
35.5
SMB10J24A
1BZ
26.7
29.5
1.0
24
1.0
25.7
38.9
SMB10J26A
1CE
28.9
31.9
1.0
26
1.0
23.8
42.1
SMB10J28A
1CG
31.1
34.4
1.0
28
1.0
22.0
45.4
SMB10J30A
1CK
33.3
36.8
1.0
30
1.0
20.7
48.4
SMB10J33A
1CM
36.7
40.6
1.0
33
1.0
18.8
53.3
SMB10J36A
1CP
40.0
44.2
1.0
36
1.0
17.2
58.1
SMB10J40A
1CR
44.4
49.1
1.0
40
1.0
15.5
64.5
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
(4) V = 3.5 V at I = 50 A (uni-directional only)
F
F
Revision: 20-Jul-2020
Document Number: 89424
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
BIDIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (V) (1)
MIN.
MAX.
6.40
7.25
TEST CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
10
5.0
2000
87.0
9.2
10.3
SMB8J5.0CA
1AE
SMB8J6.0CA
1AG
6.67
7.37
10
6.0
2000
77.7
SMB8J6.5CA
1AK
7.22
7.98
10
6.5
1000
71.4
11.2
SMB8J7.0CA
1AM
7.78
8.60
10
7.0
400
66.7
12.0
SMB8J7.5CA
1AP
8.33
9.21
1.0
7.5
200
62.0
12.9
SMB8J8.0CA
1AR
8.89
9.83
1.0
8.0
100
58.8
13.6
SMB8J8.5CA
1AT
9.44
10.4
1.0
8.5
40
55.6
14.4
SMB8J9.0CA
1AV
10.0
11.1
1.0
9.0
20
51.9
15.4
SMB8J10CA
1AX
11.1
12.3
1.0
10
10
47.1
17.0
SMB8J11CA
1AZ
12.2
13.5
1.0
11
5.0
44.0
18.2
SMB8J12CA
1BE
13.3
14.7
1.0
12
5.0
40.2
19.9
SMB8J13CA
1BG
14.4
15.9
1.0
13
1.0
37.2
21.5
SMB8J14CA
1BK
15.6
17.2
1.0
14
1.0
34.5
23.2
SMB8J15CA
1BM
16.7
18.5
1.0
15
1.0
32.8
24.4
SMB8J16CA
1BP
17.8
19.7
1.0
16
1.0
30.8
26.0
SMB8J17CA
1BR
18.9
20.9
1.0
17
1.0
29.0
27.6
SMB8J18CA
1BT
20.0
22.1
1.0
18
1.0
27.4
29.2
SMB8J20CA
1BV
22.2
24.5
1.0
20
1.0
24.7
32.4
SMB8J22CA
1BX
24.4
26.9
1.0
22
1.0
22.5
35.5
SMB8J24CA
1BZ
26.7
29.5
1.0
24
1.0
20.6
38.9
SMB8J26CA
1CE
28.9
31.9
1.0
26
1.0
19.0
42.1
SMB8J28CA
1CG
31.1
34.4
1.0
28
1.0
17.6
45.4
SMB8J30CA
1CK
33.3
36.8
1.0
30
1.0
16.5
48.4
SMB8J33CA
1CM
36.7
40.6
1.0
33
1.0
15.0
53.3
SMB8J36CA
1CP
40.0
44.2
1.0
36
1.0
13.8
58.1
SMB8J40CA
1CR
44.4
49.1
1.0
40
1.0
12.4
64.5
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient
RθJA
Typical thermal resistance, junction to lead
(1)
RθJL
VALUE
UNIT
72
°C/W
20
°C/W
Note
Mounted on minimum recommended pad layout
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMB10J5.0A-M3/52
0.106
52
750
7" diameter plastic tape and reel
SMB10J5.0A-M3/5B
0.106
5B
3200
13" diameter plastic tape and reel
Revision: 20-Jul-2020
Document Number: 89424
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
10
SMB10J5.0 SMB10J40A
1
SMB8J5.0C SMB8J40CA
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
Measured at
Zero Bias
1000
VR, Measured at
Stand-Off
Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Bi-Directional
100 µs
1.0 ms
10
10 ms
1
100
10
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
75
50
25
10
1.0
0
0
25
50
75
100
125
150
175
0.01
200
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
td
10
0
0
1.0
2.0
3.0
4.0
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 20-Jul-2020
Document Number: 89424
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 20-Jul-2020
Document Number: 89424
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Revision: 01-Jan-2023
1
Document Number: 91000