SMBG12CAHE3/5B

SMBG5.0A thru SMBG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • • • • • • • • • SMBG (DO-215AA) • • PRIMARY CHARACTERISTICS VWM 5.0 V to 188 V VBR (unidirectional) 6.4 V to 231 V VBR (bidirectional) 6.4 V to 231 V PPPM 600 W IFSM (unidirectional only) 100 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMBG (DO-215AA) Low profile package Ideal for automated placement Glass passivated chip junction Available in unidirectional and bidirectional 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMBG (DO-215AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, industrial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional devices use CA suffix (e.g. SMBG10CA). Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types Electrical characteristics apply in both directions. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs SYMBOL waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2) Operating junction and storage temperature range VALUE UNIT PPPM 600 W IPPM See next table A IFSM 100 A TJ, TSTG -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 17-Sep-2021 Document Number: 88456 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBG5.0A thru SMBG188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE MODIFIED GULL WING (+)SMBG5.0A (5) (+)SMBG6.0A (+)SMBG6.5A (+)SMBG7.0A (+)SMBG7.5A (+)SMBG8.0A (+)SMBG8.5A (+)SMBG9.0A (+)SMBG10A (+)SMBG11A (+)SMBG12A (+)SMBG13A (+)SMBG14A (+)SMBG15A (+)SMBG16A (+)SMBG17A (+)SMBG18A (+)SMBG20A (+)SMBG22A (+)SMBG24A (+)SMBG26A (+)SMBG28A (+)SMBG30A (+)SMBG33A (+)SMBG36A (+)SMBG40A (+)SMBG43A (+)SMBG45A (+)SMBG48A (+)SMBG51A (+)SMBG54A (+)SMBG58A (+)SMBG60A (+)SMBG64A (+)SMBG70A (+)SMBG75A (+)SMBG78A (+)SMBG85A (+)SMBG90A (+)SMBG100A (+)SMBG110A (+)SMBG120A (+)SMBG130A (+)SMBG150A (+)SMBG160A (+)SMBG170A SMBG188A DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI BI MIN. MAX. KE KG KK KM KP KR KT KV KX KZ LE LG LK LM LP LR LT LV LX LZ ME MG MK MM MP MR MT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR PS KE KG AK KM AP AR AT AV AX KZ BE LG BK BM LM LR BT LV BX BZ CE MG CK CM CP CR CT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR PS 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 122 133 144 167 178 189 209 7.07 7.37 7.98 8.60 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86.0 92.1 95.8 104 111 123 135 147 159 185 197 209 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (3) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 800 800 500 200 100 50 20 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 65.2 58.3 53.6 50.0 46.5 44.1 41.7 39.0 35.3 33.0 30.2 27.9 25.9 24.6 23.1 21.7 20.5 18.5 16.9 15.4 14.3 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.8 7.3 6.9 6.4 6.2 5.8 5.3 5.0 4.8 4.4 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.2 2.0 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 328 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bidirectional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bidirectional SMBG5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V at I = 50 A (unidirectional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both unidirectional and bidirectional devices Revision: 17-Sep-2021 Document Number: 88456 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBG5.0A thru SMBG188CA www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient (1) RθJA 100 Typical thermal resistance, junction to lead RθJL 20 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMBG5.0A-E3/52 0.096 52 750 7" diameter plastic tape and reel SMBG5.0A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel SMBG5.0AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel SMBG5.0AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 4.0 6000 100 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 Uni-Directional Bi-Directional TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (°C) VWM - Reverse Stand-Off Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance 200 Revision: 17-Sep-2021 Document Number: 88456 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBG5.0A thru SMBG188CA www.vishay.com Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (°C/W) 100 10 1.0 0.1 0.001 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 10 0.01 0.1 1 10 100 1000 1 10 100 tp - Pulse Duration (s) Number of Cycles at 60 Hz Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMBG (DO-215AA) Mounting Pad Layout Cathode Band 0.165 (4.19) 0.155 (3.94) 0.130 (3.30) 0.083 (2.10) 0 .077 (1.96) 0.085 (2.16) 0.060 (1.27) 0.180 (4.57) 0.160 (4.06) 0.095 (2.41) 0.075 (1.90) 0.016 (0.41) 0.006 (0.15) 0.058 (1.47) 0.020 0.038 (0.97) (0.51) MAX. 0.255 (6.48) 0.235 (5.97) 0.030 (0.76) 0.015 (0.38) 0.008 (0.20) 0.002 (0.05) Seating Plane Revision: 17-Sep-2021 Document Number: 88456 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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