SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
Surface-Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Glass passivated chip junction
• Available in unidirectional and bidirectional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
SMB (DO-214AA)
Cathode
Available
• Excellent clamping capability
• Very fast response time
Anode
• Low incremental surge resistance
(unidirectional)
(bidirectional)
LINKS TO ADDITIONAL RESOURCES
3D 3D
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
VBR (bidirectional)
6.4 V to 231 V
VBR (unidirectional)
6.4 V to 231 V
VWM
5.0 V to 188 V
PPPM
600 W
PD
5.0 W
IFSM (unidirectional only)
100 A
TJ max.
150 °C
Polarity
Unidirectional, bidirectional
Package
SMB (DO-214AA)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for unidirectional types the band denotes cathode
end, no marking on bidirectional types
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
600
W
IPPM
See next table
A
PD
5.0
W
IFSM
100
A
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 29-Sep-2022
Document Number: 88392
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND
LEAD
(+)SMBJ5.0A (5)
(+)SMBJ6.0A
(+)SMBJ6.5A
(+)SMBJ7.0A
(+)SMBJ7.5A
(+)SMBJ8.0A
(+)SMBJ8.5A
(+)SMBJ9.0A
(+)SMBJ10A
(+)SMBJ11A
(+)SMBJ12A
(+)SMBJ13A
(+)SMBJ14A
(+)SMBJ15A
(+)SMBJ16A
(+)SMBJ17A
(+)SMBJ18A
(+)SMBJ20A
(+)SMBJ22A
(+)SMBJ24A
(+)SMBJ26A
(+)SMBJ28A
(+)SMBJ30A
(+)SMBJ33A
(+)SMBJ36A
(+)SMBJ40A
(+)SMBJ43A
(+)SMBJ45A
(+)SMBJ48A
(+)SMBJ51A
(+)SMBJ54A
(+)SMBJ58A
(+)SMBJ60A
(+)SMBJ64A
(+)SMBJ70A
(+)SMBJ75A
(+)SMBJ78A
(+)SMBJ85A
(+)SMBJ90A
(+)SMBJ100A
(+)SMBJ110A
(+)SMBJ120A
(+)SMBJ130A
(+)SMBJ150A
(+)SMBJ160A
(+)SMBJ170A
DEVICE
MARKING
CODE
BREAKDOW
N VOLTAGE
VBR AT IT (1)
(V)
UNI
BI
MIN.
MAX.
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
KE
KG
AK
KM
AP
AR
AT
AV
AX
KZ
BE
LG
BK
BM
LM
LR
BT
LV
BX
BZ
CE
MG
CK
CM
CP
CR
CT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
209
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
111
123
135
147
159
185
197
209
231
TEST
STAND-OFF
CURRENT VOLTAGE
IT
VWM
(mA)
(V)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
800
800
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (A) (2)
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
5.3
5.0
4.8
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
2.0
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR
(%/°C)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
328
0.057
0.059
0.061
0.065
0.067
0.069
0.073
0.074
0.078
0.080
0.083
0.084
0.087
0.088
0.089
0.090
0.092
0.094
0.096
0.096
0.097
0.098
0.099
0.100
0.100
0.101
0.102
0.102
0.103
0.104
0.104
0.104
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
SMBJ188A
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bidirectional types having V
WM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMBJ5.0CA, the maximum V
BR is 7.25 V
(6) V = 3.5 V max. at I = 50 A (unidirectional only)
F
F
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 29-Sep-2022
Document Number: 88392
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient (1)
RθJA
100
Typical thermal resistance, junction to lead
RθJL
20
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBJ5.0A-E3/52
SMBJ5.0A-M3/52
SMBJ5.0A-E3/5B
SMBJ5.0A-M3/5B
SMBJ5.0AHE3_B/H (1)
SMBJ5.0AHM3_B/H (1)
SMBJ5.0AHE3_B/I (1)
SMBJ5.0AHM3_B/I(1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.096
52
750
7" diameter plastic tape and reel
0.096
5B
3200
13" diameter plastic tape and reel
0.096
H
750
7" diameter plastic tape and reel
0.096
I
3200
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 29-Sep-2022
Document Number: 88392
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6000
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
Measured at
Zero Bias
1000
VR, Measured at Stand-Off
Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
Uni-Directional
Bi-Directional
10
10 ms
1
10
100
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
75
50
25
25
50
75
100
125
150
175
1.0
0.1
0.001
0
0
10
200
0.01
0.1
1.0
10
100
1000
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
td
10
0
0
1.0
2.0
3.0
4.0
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 29-Sep-2022
Document Number: 88392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008
(0.203)
Max.
0.220 (5.59) REF.
Revision: 29-Sep-2022
Document Number: 88392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
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Document Number: 91000
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