SMBJ33CD-M3/I

SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • ± 3.5 %: very tight VBR tolerance • Low leakage current • Available in unidirectional and bidirectional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % SMB (DO-214AA) • Excellent clamping capability • Very fast response time LINKS TO ADDITIONAL RESOURCES • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 3D 3D 3D Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS VBR (unidirectional) 6.5 V to 228 V VBR (bidirectional) 6.5 V to 145 V VWM (unidirectional) 5.0 V to 188 V VWM (bidirectional) 5.0 V to 120 V PPPM 600 W MECHANICAL DATA PD at TM = 50 °C 5.0 W PD at TA = 25 °C 1.0 W TJ max. 150 °C Polarity Unidirectional, bidirectional Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade Package SMB (DO-214AA) DEVICES FOR BIDIRECTIONAL APPLICATIONS For bidirectional devices use CD suffix (e.g. SMBJ5.0CD). Electrical characteristics apply in both directions. Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFETs, signal lines of sensor units for consumer, computer, industrial, and telecommunication. Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: for unidirectional types the band denotes cathode end, no cathode band on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation Peak pulse current Power dissipation SYMBOL VALUE UNIT with a 10/1000 μs waveform PPPM (1) 600 W with a 10/1000 μs waveform (1) See next table A IPPM TM = 50 °C PD (2) 5.0 TA = 25 °C PD (3) 1.0 TJ, TSTG -55 to +150 Operating junction and storage temperature range W °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Power dissipation mounted on infinite heatsink (3) Power dissipation mounted on minimum recommended pad layout Revision: 20-Jul-2020 Document Number: 87606 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE (+)SMBJ5.0D (+)SMBJ6.0D (+)SMBJ6.5D (+)SMBJ7.0D (+)SMBJ7.5D (+)SMBJ8.0D (+)SMBJ8.5D (+)SMBJ9.0D (+)SMBJ10D (+)SMBJ11D (+)SMBJ12D (+)SMBJ13D (+)SMBJ14D (+)SMBJ15D (+)SMBJ16D (+)SMBJ17D (+)SMBJ18D (+)SMBJ20D (+)SMBJ22D (+)SMBJ24D (+)SMBJ26D (+)SMBJ28D (+)SMBJ30D (+)SMBJ33D (+)SMBJ36D (+)SMBJ40D (+)SMBJ43D (+)SMBJ45D (+)SMBJ48D (+)SMBJ51D (+)SMBJ54D (+)SMBJ58D (+)SMBJ60D (+)SMBJ64D (+)SMBJ70D (+)SMBJ75D (+)SMBJ78D (+)SMBJ85D (+)SMBJ90D (+)SMBJ100D (+)SMBJ110D (+)SMBJ120D (+)SMBJ130D (+)SMBJ150D (+)SMBJ160D (+)SMBJ170D SMBJ188D DEVICE MARKING CODE UNI 6AA 6AB 6AC 6AD 6AE 6AF 6AG 6AH 6AK 6AL 6AM 6AN 6AP 6AQ 6AR 6AS 6AT 6AU 6AV 6AW 6AX 6AY 6AZ 6BA 6BB 6BC 6BD 6BE 6BF 6BG 6BH 6BK 6BL 6BM 6BN 6BP 6BQ 6BR 6BS 6BT 6BU 6BV 6BW 6BX 6BY 6BZ 6CA BI 6AA 6AB 6AC 6AD 6AE 6AF 6AG 6AH 6AK 6AL 6AM 6AN 6AP 6AQ 6AR 6AS 6AT 6AU 6AV 6AW 6AX 6AY 6AZ 6BA 6BB 6BC 6BD 6BE 6BF 6BG 6BH 6BK 6BL 6BM 6BN 6BP 6BQ 6BR 6BS 6BT 6BU 6BV - BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.50 6.97 6.77 7.27 7.33 7.87 7.90 8.48 8.46 9.08 9.03 9.69 9.57 10.3 10.2 10.9 11.3 12.1 12.4 13.3 13.5 14.5 14.6 15.7 15.8 17.0 17.0 18.2 18.1 19.4 19.2 20.6 20.3 21.8 22.5 24.2 24.8 26.6 27.1 29.1 29.3 31.5 31.6 33.9 33.8 36.3 37.3 40.0 40.6 43.6 45.1 48.4 48.5 52.1 50.8 54.5 54.1 58.1 57.6 61.8 60.9 65.4 65.4 70.2 67.7 72.7 72.2 77.5 79.0 84.8 84.6 90.8 88.1 94.4 95.7 103 102 109 113 121 124 133 135 145 146 157 170 182 181 194 192 206 212 228 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (2) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (3) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 500 500 300 150 75 35 15 5.0 2.0 2.0 2.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 65.9 58.9 54.5 50.8 47.2 44.8 42.2 39.7 35.9 33.5 30.6 28.3 26.2 25.0 23.4 22.1 20.8 18.8 17.1 15.6 14.5 13.4 12.6 11.5 10.5 9.43 8.76 8.40 7.90 7.40 7.00 6.50 6.28 5.88 5.40 5.06 4.86 4.46 4.17 3.77 3.45 3.15 2.94 2.53 2.34 2.23 2.03 9.1 10.2 11.0 11.8 12.7 13.4 14.3 15.1 16.7 17.9 19.6 21.2 22.9 24.0 25.6 27.2 28.8 32.0 35.1 38.4 41.6 44.7 47.7 52.5 57.3 63.6 68.5 71.6 76.3 81.2 85.9 92.3 95.5 102 111 119 124 135 144 159 174 190 206 239 256 270 301 Notes • All terms and symbols are consistent with ANSI/IEEE C62.35 (1) Pulse test: t ≤ 50 ms p (2) For bi-directional types having V WM of 12 V and less, the ID limit is doubled (3) Surge current waveform per fig. 3 and derate per fig. 2 (+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional device Revision: 20-Jul-2020 Document Number: 87606 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient Typical thermal resistance, junction to mount SYMBOL VALUE RθJA (1) 125 RθJA (2) 100 RθJM 20 UNIT °C/W Notes (1) Mounted on minimum recommended pad layout (2) Mounted on 5.0 mm x 5.0 mm copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMBJ5.0D-M3/H 0.096 H 750 7" diameter plastic tape and reel SMBJ5.0D-M3/I 0.096 I 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 10 1 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas 0.1 tr = 10 μs 100 Peak value IPPM Half value - IPP/2 50 10/1000 μs waveform as de ned by R.E.A. td 0 10 100 1000 0 10 000 td - Pulse Width (μs) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 tp - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 10000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % TJ = 25 °C pulse width (td) is de ned as the point where the peak current decays to 50 % of IPPM 75 50 25 0 Measured at zero bias 1000 100 Measured at stand-off voltage, VWM 10 Uni-Directional Bi-Directional TJ = 25 °C f = 1.0 MHz 1 0 25 50 75 100 125 150 TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 1 10 100 VWM - Reverse Stand-Off Voltage (V) Fig. 4 - Typical Junction Capacitance Revision: 20-Jul-2020 Document Number: 87606 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD Vishay General Semiconductor 6 Transient Thermal Impedance (°C/W) PM(av) - Steady State Power Dissipation (W) www.vishay.com TA=TM mounted on inifinite heatsink 5 4 3 2 Mounted on minimum recommend pad layout 1 0 0 25 50 75 100 125 150 1000 Junction to Ambient 100 Mounted on minimum recommend pad area 10 1 Mounted on 5.0 x 5.0 mm copper pad area 0.1 0.001 0.1 10 1000 tp - Pulse Duration (s) TA - Ambient Temperature (°C) Fig. 5 - Power Dissipation Derating Curve Fig. 6 - Typical Transient Thermal Impedance Note • Fig.1, 10 000 μs Pppm is actual test for VWM ≤ 60 V types, over 60 V types 10 000 μs Pppm is curve extensional value PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 20-Jul-2020 Document Number: 87606 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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