SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Surface-Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Unidirectional polarity only
Available
• Peak pulse power: 600 W (10/1000 μs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
Available
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or base P/NHM3
SMB (DO-214AA)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
MECHANICAL DATA
VBR (unidirectional)
4.1 V
VWM
3.3 V
PPPM
600 W
PD
5W
IFSM (unidirectional only)
60 A
TJ max.
175 °C
Polarity
Unidirectional
Package
SMB (DO-214AA)
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
PPPM
600
W
IPP
50
A
Peak pulse current with a 8/20 μs waveform (fig. 1)
IPPM
200
A
Peak forward surge current 8.3 ms single half sine-wave (2)
IFSM
60
A
Peak pulse power dissipation (1)(2)
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Power dissipation on infinite heatsink, TA = 75 °C
PD
5
W
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
Notes
(1) Non-repetitive current pulse, per fig. 1
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 14-Apr-2023
Document Number: 88940
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
SMBJ3V3
KC
BREAKDOWN
VOLTAGE
VBR AT IT
MIN.
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR AT VWM
STAND-OFF
VOLTAGE
VWM
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPP
10/1000 μs
TYPICAL
TYPICAL
JUNCTION
TEMPERATURE
CAPACITANCE
COEFFICIENT
CJ AT 0 V
OF VBR
1 MHz
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
8/20 μs
V
mA
μA
V
V
A
V
A
10-4/°C
pF
4.1
1.0
200
3.3
7.3
50
10.3
200
-5.3
5200
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to lead (1)
RθJL
20
Typical thermal resistance, junction to ambient (2)
RθJA
100
UNIT
°C/ W
Notes
(1) Thermal resistance from junction to lead - mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to ambient - mounted on the recommended PCB pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBJ3V3-E3/52
SMBJ3V3-M3/52
SMBJ3V3-E3/5B
SMBJ3V3-M3/5B
SMBJ3V3HE3_B/H (1)
SMBJ3V3HM3_B/H (1)
SMBJ3V3HE3_B/I (1)
SMBJ3V3HM3_B/I (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.106
52
750
7" diameter plastic tape and reel
0.106
5B
3200
13" diameter plastic tape and reel
0.106
H
750
7" diameter plastic tape and reel
0.106
I
3200
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 14-Apr-2023
Document Number: 88940
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
tr = 8 µs
Peak Value
IPPM
100
Clamping Voltage (V)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
td = 1000 µs
td = 20 µs
8/20 µs
td
4
0
1.0
3.0
2.0
0.1
4.0
10
100
1000
IPP (A)
Fig. 1 - Pulse Wave Form
Fig. 4 - Clamping Voltage vs. Peak Pulse Current (TJ initial = 25 °C)
10000
5500
1
100
0.2" x 0.2" (5.0 mm x 5.0 mm)
copper pad areas
0.1
1st line
2nd line
1000
CJ - Junction Capacitance (pF)
10
10
0.01
0.001
1
t - Time (ms)
100
2nd line
P PPM - Peak Pulse Power (kW)
6
10/1000 µs
0
0.1
5000
4500
4000
3500
3000
2500
2000
10
1
0
0.5
1
1.5
2
2.5
3
td - Pulse Width (ms)
Reverse Voltage (V)
Fig. 2 - Peak Pulse Power Rating Curve
Fig. 5 - Typical Junction Capacitance
3.5
100
Transient Thermal Impedance (°C/W)
10
IR (TJ)/IR (TJ = 25 °C)
8
1
0.1
0
25
50
75
100
125
150
175
10
1
0.01
0.1
1
10
100
1000
TJ - Junction T emperature (°C)
t - Pulse Duration (s)
Fig. 3 - Relative Variation of Leakage Current vs.
Junction Temperature
Fig. 6 - Typical Transient Thermal Impedance
Revision: 14-Apr-2023
Document Number: 88940
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
IF - Peak Forward Current (A)
100
TJ = 175 °C
10
TJ = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VF - Forward Voltage Drop (V)
Fig. 7 - Typical Peak Forward Voltage Drop vs.
Peak Forward Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 14-Apr-2023
Document Number: 88940
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000