SMC3K64CAHM3_A/H

SMC3K10CAHM3_A thru SMC3K120CAHM3_A www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Bidirectional • Peak pulse power - 3000 W (10/1000 μs) - 30 kW (8/20 μs) • Excellent clamping capability Available • Very fast response time SMC (DO-214AB) • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C LINKS TO ADDITIONAL RESOURCES 3D 3D • AEC-Q101 qualified • UL recognition for safety 497B with file number E136766 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS VWM 10 V to 120 V PPPM 3000 W Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. TJ max. 175 °C Meets to specification of: VBR 11.1 V to 147 V Polarity Bidirectional Package SMC (DO-214AB) ISO 7637-2:2011 Pulse 1, Pulse 2a, Pulse 3a, Pulse 3b ISO 16750-2 Pulse b MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3_A - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HM3 suffix meets JESD 201 class 2 whisker test per Polarity: no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (fig.1) Peak pulse current with a 10/1000 μs waveform Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM (1) 3000 W IPPM (1) TJ, TSTG See next table A -55 to +175 °C Note (1) Non-repetitive current pulse and derated above T = 25 °C A Revision: 13-Sep-2022 Document Number: 98241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMC3K10CAHM3_A thru SMC3K120CAHM3_A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE SMC3K10CAHM3_A DEVICE MARKING CODE 3BDX BREAKDOWN VOLTAGE VBR (1) (V) AT IT MIN. MAX. 11.1 12.3 TEST CURRENT IT (mA) 1.0 STAND-OFF VOLTAGE VWM (V) 10 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) 10.0 MAXIMUM CLAMPING VOLTAGE VC (V) AT IPPM 10/1000 μs MAXIMUM CLAMPING VOLTAGE VC (V) AT IPPM 8/20 μs (V) (A) (V) (A) 17.0 176 24.1 1245 SMC3K12CAHM3_A 3BEE 13.3 14.7 1.0 12 5.0 19.9 151 25.3 1186 SMC3K13CAHM3_A 3GEG 14.4 15.9 1.0 13 2.0 21.5 140 27.2 1103 SMC3K14CAHM3_A 3BEK 15.6 17.2 1.0 14 2.0 23.2 129 30.0 1000 SMC3K15CAHM3_A 3BEM 16.7 18.5 1.0 15 2.0 24.4 123 32.5 923 SMC3K16CAHM3_A 3GEP 17.8 19.7 1.0 16 2.0 26.0 115 34.4 872 SMC3K17CAHM3_A 3GER 18.9 20.9 1.0 17 2.0 27.6 109 37.0 811 SMC3K18CAHM3_A 3BET 20.0 22.1 1.0 18 2.0 29.2 103 39.3 763 SMC3K20CAHM3_A 3EEV 22.2 24.5 1.0 20 2.0 32.4 92.6 42.8 701 SMC3K22CAHM3_A 3BEX 24.4 26.9 1.0 22 1.0 35.5 84.5 48.2 622 SMC3K24CAHM3_A 3BEZ 26.7 29.5 1.0 24 1.0 38.9 77.1 51.6 581 SMC3K26CAHM3_A 3BFE 28.9 31.9 1.0 26 1.0 42.1 71.3 55.8 538 SMC3K28CAHM3_A 3BFG 31.1 34.4 1.0 28 1.0 45.4 66.1 60.2 498 SMC3K30CAHM3_A 3BFK 33.3 36.8 1.0 30 1.0 48.4 62.0 64.0 469 SMC3K33CAHM3_A 3BFM 36.7 40.6 1.0 33 1.0 53.3 56.3 69.8 430 SMC3K36CAHM3_A 3BFP 40.0 44.2 1.0 36 1.0 58.1 51.6 76.0 395 SMC3K40CAHM3_A 3BFR 44.4 49.1 1.0 40 1.0 64.5 46.5 84.0 357 SMC3K43CAHM3_A 3BFT 47.8 52.8 1.0 43 1.0 69.4 43.2 90.3 332 SMC3K45CAHM3_A 3GFV 50.0 55.3 1.0 45 1.0 72.7 41.3 94.6 317 SMC3K48CAHM3_A 3GFX 53.3 58.9 1.0 48 1.0 77.4 38.8 100 300 SMC3K51CAHM3_A 3GFZ 56.7 62.7 1.0 51 1.0 82.4 36.4 107 280 SMC3K54CAHM3_A 3GGE 60.0 66.3 1.0 54 1.0 87.1 34.4 113 265 SMC3K58CAHM3_A 3GGG 64.4 71.2 1.0 58 1.0 93.6 32.1 121 248 SMC3K60CAHM3_A 3GGK 66.7 73.7 1.0 60 1.0 96.8 31.0 125 240 SMC3K64CAHM3_A 3GGM 71.1 78.6 1.0 64 1.0 103 29.1 134 224 SMC3K70CAHM3_A 3GGP 77.8 86.0 1.0 70 1.0 113 26.5 146 205 SMC3K75CAHM3_A 3GGR 83.3 92.1 1.0 75 1.0 121 24.8 157 191 SMC3K78CAHM3_A 3GGT 86.7 95.8 1.0 78 1.0 126 23.8 163 184 SMC3K85CAHM3_A 3GGV 94.4 104 1.0 85 1.0 137 21.9 177 169 SMC3K90CAHM3_A 3GGX 100 111 1.0 90 1.0 146 20.5 189 159 SMC3K100CAHM3_A 3GGZ 111 123 1.0 100 1.0 162 18.5 209 144 SMC3K110CAHM3_A 3GHE 122 135 1.0 110 1.0 177 16.9 230 130 SMC3K120CAHM3_A 3GHG 133 147 1.0 120 1.0 193 15.5 250 120 Notes (1) Pulse test: t ≤ 50 ms p (2) All terms and symbols are consistent with ANSI/IEEE C62.35 IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted) STANDARD IEC 61000-4-2 TEST TYPE Human body model (contact mode) Human body model (air discharge mode) TEST CONDITIONS SYMBOL C = 150 pF, R = 330 Ω ESD VALUE 30 kV 30 kV Revision: 13-Sep-2022 Document Number: 98241 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMC3K10CAHM3_A thru SMC3K120CAHM3_A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Thermal resistance SYMBOL TYP. UNIT RthJA (1) 90 °C/W RthJM (2) 4.0 °C/W Notes (1) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz. standard footprint (2) Thermal resistance junction-to-mount to follow JEDEC® 51-14 using Transient Dual Interface Test Method (TDIM) ORDERING INFORMATION (Example) BASE QUANTITY DELIVERY MODE SMC3K10CAHM3_A/H (1) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE 0.257 H 850 7" diameter plastic tape and reel SMC3K10CAHM3_A/I (1) 0.257 I 3500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 100 1 1000 100 Peak value I PPM 1st line 2nd line 2nd line IPPM - Peak Pulse Current, % I RSM 1000 1st line 1stline line 2nd 2nd line 2nd line PPPM - Peak Pulse Power (kW) T J = 25 °C Pulse width (t d ) is defined as the point where the peak current decays to 50 % of I PPM tr = 10 μs 100 10 10000 150 10000 1000 Half value I PPM - I PPM /2 50 100 10/1000 μs waveform td 100 1000 10 0 0.5 1.0 1.5 Fig. 1 - Peak Pulse Power Derating Curve 50 100 25 0 10 100 125 150 175 TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 2nd line IPPM - Peak Pulse Current, % IPPM 1000 1st line 2nd line Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 150 75 75 3.5 4.0 Axis Title 10000 50 3.0 Fig. 3 - 10/1000 μs Pulse Waveform Axis Title 100 25 2.5 t p - Time (ms) td - Pulse Width (μs) 0 2.0 10000 tr = 8 μs TJ = 25 °C Pulse width (td) is defined as the point where the peak current decays to 50 % of IPPM 100 Peak value IPPM 1000 Half value IPPM - IPPM/2 1st line 2nd line 10 0 10 10 000 0.1 50 8 μs/20 μs waveform according to IEC 61000-4-5 100 0 td = 20 μs 10 -50 0 10 20 30 40 50 60 tp - Time (μs) Fig. 4 - 8/20 μs Pulse Waveform Revision: 13-Sep-2022 Document Number: 98241 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMC3K10CAHM3_A thru SMC3K120CAHM3_A www.vishay.com Vishay General Semiconductor Axis Title Axis Title 10000 Measured at zero bias 1st line 2nd line 1000 1000 100 Measured at stand-off voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 10000 100 RθJA 10 100 1 RθJM 0.1 0.001 10 10 20 30 40 50 60 70 80 90 100 110 120 1000 1st line 2nd line 10 000 1000 2nd line Transient Thermal Impedance (°C/W) 2nd line CJ - Junction Capacitance (pF) 100 000 0.01 0.1 1 10 100 10 1000 VWM - Reverse Stand-Off Voltage (V) tp - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance Notes (1) Fig. 1- Power calculation is based on I PPM times defined maximum clamping voltage by pulse width (2) Fig. 1 - 10 000 μs P PPM is actual test for VWM ≤ 60 V types, over 60 V types 10 000 PPPM is curve extensional value TYPICAL CLAMPING VOLTAGE AT ISO7637-2 WITH 12 V BATTERY SYSTEM (TA = 25 °C) PULSE 1 PULSE 2a PULSE 3a PULSE 3b -150 V US, 2 ms, 10 Ω 0.5 s Interval 5000 pulses 112 V US, 50 μs, 2 Ω 0.2 s Interval 5000 pulses -220 V US, 150 ns, 50 Ω 100 μs Interval (10 kHz) 1h 150 V US, 150 ns, 50 Ω 100 μs Interval (10 kHz) 1h SMC3K24CAHM3_A -33 V 33 V -30 V 35 V SMC3K26CAHM3_A -35 V 35 V -32 V 37 V SMC3K28CAHM3_A -38 V 38 V -34 V 40 V SMC3K30CAHM3_A -40 V 40 V -36 V 42 V SMC3K33CAHM3_A -43 V 43 V -39 V 45 V CONDITION Device type TYPICAL LOAD DUMP CAPABILITY AT ISO 16750-2 PULSE B WITH 12 V BATTERY SYSTEM (TA = 25 °C) td V tr US 0.9 US 0.1 US US* UA 0 t Fig. 7 Revision: 13-Sep-2022 Document Number: 98241 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMC3K10CAHM3_A thru SMC3K120CAHM3_A www.vishay.com Vishay General Semiconductor Axis Title 4.0 3.0 1000 2.5 1st line 2nd line 2nd line RI - Internal Resistance ( 3.5 10000 US = 101 V, td = 150 ms, 5 pulses at 1 min interval 2.0 SMC3K24CAHM3_A SMC3K26CAHM3_A SMC3K28CAHM3_A SMC3K30CAHM3_A SMC3K33CAHM3_A 1.5 1.0 100 0.5 0 30.0 32.5 35.0 37.5 40.0 42.5 10 45.0 US* - Axis Title 4.0 US = 101 V, td = 400 ms, 5 pulses at 1 min interval 3.0 1000 2.5 1st line 2nd line 2nd line RI - Internal Resistance ( 3.5 10000 1st 2nd Fig. 8 2.0 1.5 1.0 SMC3K24CAHM3_A SMC3K26CAHM3_A SMC3K28CAHM3_A SMC3K30CAHM3_A SMC3K33CAHM3_A 100 0.5 0 30.0 32.5 35.0 37.5 40.0 42.5 10 45.0 US* - Fig. 9 Revision: 13-Sep-2022 Document Number: 98241 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMC3K10CAHM3_A thru SMC3K120CAHM3_A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Mounting Pad Layout 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 13-Sep-2022 Document Number: 98241 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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