SMCG5.0A thru SMCG188CA
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Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
SMCG (DO-215AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
VBR (uni-directional)
6.4 V to 231 V
VBR (bi-directional)
6.4 V to 231 V
PPPM
1500 W
PD
6.5 W
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
IFSM
200 A
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
Package
SMCG (DO-215AB)
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMCG188CA).
Electrical characteristics apply in both directions.
Case: SMCG (DO-215AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)(2)
(1)
Power dissipation on infinite heatsink TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
1500
W
IPPM
See next table
A
PD
6.5
W
IFSM
200
A
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
Revision: 16-Jan-18
Document Number: 89428
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCG5.0A thru SMCG188CA
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
GULL WING
(+)SMCG5.0A (5)
(+)SMCG6.0A
(+)SMCG6.5A
(+)SMCG7.0A
(+)SMCG7.5A
(+)SMCG8.0A
(+)SMCG8.5A
(+)SMCG9.0A
(+)SMCG10A
(+)SMCG11A
(+)SMCG12A
(+)SMCG13A
(+)SMCG14A
(+)SMCG15A
(+)SMCG16A
(+)SMCG17A
(+)SMCG18A
(+)SMCG20A
(+)SMCG22A
(+)SMCG24A
(+)SMCG26A
(+)SMCG28A
(+)SMCG30A
(+)SMCG33A
(+)SMCG36A
(+)SMCG40A
(+)SMCG43A
(+)SMCG45A
(+)SMCG48A
(+)SMCG51A
(+)SMCG54A
(+)SMCG58A
(+)SMCG60A
(+)SMCG64A
(+)SMCG70A
(+)SMCG75A
(+)SMCG78A
(+)SMCG85A
(+)SMCG90A
(+)SMCG100A
(+)SMCG110A
(+)SMCG120A
(+)SMCG130A
(+)SMCG150A
(+)SMCG160A
(+)SMCG170A
SMCG188A
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (V) (1)
UNI
BI
MIN.
GDE
GDG
GDK
GDM
GDP
GDR
GDT
GDV
GDX
GDZ
GEE
GEG
GEK
GEM
GEP
GER
GET
GEV
GEX
GEZ
GFE
GFG
GFK
GFM
GFP
GFR
GFT
GFV
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
GGV
GGX
GGZ
GHE
GHG
GHK
GHM
GHP
GHR
GHS
GDE
GDG
BDK
GDM
BDP
BDR
BDT
BDV
BDX
GDZ
BEE
GEG
BEK
BEM
GEP
GER
BET
BEV
BEX
BEZ
BFE
BFG
BFK
BFM
BFP
BFR
BFT
GFV
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
GGV
GGX
GGZ
GHE
GHG
GHK
GHM
GHP
GHR
GHS
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
209
MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
111
123
135
147
159
185
197
209
231
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
1000
1000
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (A) (2)
163.0
145.6
133.9
125.0
116.3
110.3
104.2
97.4
88.2
82.4
75.4
69.8
64.7
61.5
57.7
54.3
51.4
46.3
42.3
38.6
35.6
33.0
31.0
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.9
10.9
10.3
9.3
8.5
7.8
7.2
6.2
5.8
5.5
4.6
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93
96
103
113
121
126
137
146
162
177
193
209
243
259
275
328
Notes
(1) Pulse test: t 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types having V
WM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE CA62.35
(5) For the bi-directional SMCG5.0CA, the maximum V
BR is 7.25 V
(6) V = 3.5 V at I = 100 A (uni-directional only)
F
F
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 16-Jan-18
Document Number: 89428
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCG5.0A thru SMCG188CA
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
SYMBOL
VALUE
UNIT
RJA (1)
75
°C/W
RJL
15
°C/W
Typical thermal resistance, junction to lead
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMCG5.0A-M3/57T
0.211
57T
850
7" diameter plastic tape and reel
SMCG5.0A-M3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
150
10
1
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1
0.1 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
1.0
2.0
3.0
td - Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
4.0
20 000
Measured at
Zero Bias
10 000
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
75
50
25
0
1000
VR, Measured at
Stand-Off
Voltage VWM
100
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
25
50
75
100
125
150
175
200
1
10
100
400
TJ - Initial Temperature (°C)
VWM - Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance Uni-Directional
Revision: 16-Jan-18
Document Number: 89428
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCG5.0A thru SMCG188CA
www.vishay.com
Vishay General Semiconductor
200
Peak Forward Surge Current (A)
Transient Thermal Impedance (°C/W)
100
10
1.0
0.1
0.001
0.01
0.1
1
10
100
100
TJ = TJ max.
8.3 ms Single Half Sine-Wave
10
1000
10
1
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMCG (DO-215AB)
Mounting Pad Layout
Cathode Band
0.310 (7.87)
0.245 (6.22)
0.220 (5.59)
0.125 (3.17)
0.115 (2.92)
0.125 (3.17)
0.050 (1.27)
0.280 (7.11)
0.260 (6.60)
0.016 (0.41)
0.006 (0.15)
0.008 (0.20)
0.002 (0.05)
0.095 (2.41)
0.075 (1.90)
0.058 (1.47)
0.038 (0.97)
0.020
(0.51) Max.
0.040 (1.02)
0.024 (0.61)
Seating Plane
0.400 (10.16)
0.380 (9.64)
Revision: 16-Jan-18
Document Number: 89428
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000