SMF11A-M3-08

SMF5V0A to SMF58A www.vishay.com Vishay Semiconductors Surface-Mount ESD Protection Diodes FEATURES eSMP® Series • 200 W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.01 % Available • Low profile package 2 1 • Wave and reflow solderable • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge 20278 • ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV SMF (DO-219AB) Available • Low incremental surge resistance, excellent clamping capability MARKING (example only) XX YY • “Low Noise” technology - very fast response time • AEC-Q101 qualified available 22623 • Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL Bar = cathode marking YY = type code (see table below) XX = date code • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Simulation Tools Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART RoHS-COMPLIANT + NUMBER AEC-Q101 LEAD (Pb)-FREE TERMINATIONS TIN (EXAMPLE) QUALIFIED PLATED STANDARD HALOGEN-FREE SMF5V0A- E SMF5V0AH SMF5V0A- H SMF5V0A- H SMF5V0A- H ORDERING CODE (EXAMPLE) -08 SMF5V0A-E3-08 -08 SMF5V0A-M3-08 3 -08 SMF5V0A-HE3-08 M 3 -08 SMF5V0A-HM3-08 3 -18 SMF5V0A-E3-18 M 3 -18 SMF5V0A-M3-18 3 -18 SMF5V0A-HE3-18 M 3 -18 SMF5V0A-HM3-18 E SMF5V0A- 10K PER 13" REEL (8 mm TAPE), MOQ = 50K 3 E SMF5V0A- 3K PER 7" REEL (8 mm TAPE), MOQ = 30K 3 M SMF5V0A- PACKAGING CODE E PACKAGE DATA PACKAGE NAME MOLDING WEIGHT COMPOUND (mg) Standard SMF (DO-219AB) Halogen-free Rev. 2.2, 19-Nov-2021 15 MOLDING HEIGHT LENGTH WIDTH COMPOUND MAX. MAX. MAX. FLAMMABILITY (mm) (mm) (mm) RATING 1.08 3.9 1.9 UL 94 V-0 MOISTURE SENSITIVITY LEVEL WHISKER TEST ACC. JESD 201 SOLDERING CONDITIONS MSL level 1 (acc. J-STD-020) Class 2 Peak temperature max. 260 °C Document Number: 85881 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF58A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power Peak forward surge current ESD immunity Thermal resistance Forward clamping voltage Junction temperature Storage temperature range Operating temperature range TEST CONDITIONS tp = 10/1000 μs waveform tp = 8/20 μs waveform acc. IEC 61000-4-5 tp = 10/1000 μs waveform 8.3 ms single half sine-wave Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Mounted on epoxy glass PCB with 3 mm x 3 mm, Cu pads ( ≥ 40 μm thick) IF = 50A, tp = 400 μs SYMBOL VALUE IPPM see “Electrical Characteristics” 1000 PPP 200 50 IFSM ± 30 VESD ± 30 UNIT A W W A kV kV RthJA 180 K/W VF TJ Tstg Top 2.5 175 -65 to +175 -65 to +175 V °C °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYPE CODE PART NUMBER SMF5V0A SMF6V0A SMF6V5A SMF7V0A SMF7V5A SMF8V0A SMF8V5A SMF9V0A SMF10A SMF11A SMF12A SMF13A SMF14A SMF15A SMF16A SMF17A SMF18A SMF20A SMF22A SMF24A SMF26A SMF28A SMF30A SMF33A SMF36A SMF40A SMF43A SMF45A SMF48A SMF51A SMF54A SMF58A REVERSE BREAKDOWN VOLTAGE at IT, tp = 5 ms MAXIMUM MAXIMUM MAXIMUM TYPICAL REVERSE CAP. TEST STAND-OFF REVERSE PEAK PULSE CLAMPING CURRENT VOLTAGE CURRENT at VR = 0 V, CURRENT VOLTAGE at VRWM tp = 10/1000 μs f = 1 MHz at IPPM PROTECTION PATHS STD. HALOGENFREE VBR MIN. (V) VBR MAX. (V) IT (mA) VRWM (V) IR (μA) IPPM (A) VC MAX. (V) CD TYP. (pF) Nchannel AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT BV BX BZ CE CG CK CM CP CR CT CV CX CZ CA CC NE NG NK NM NP NR NT NV NX NZ OE OG OK OM OP OR OT OV OX OZ PE PG PK PM PP PR PT PV PX PZ PA PC 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40 44.4 47.8 50 53.3 56.7 60 64.4 7.1 7.4 8 8.6 9.3 9.9 10.5 11.2 12.3 13.5 14.7 16 17.3 18.5 19.7 20.9 22.3 24.6 27 29.6 32 34.4 36.9 40.6 44.3 49.1 52.9 55.3 59 62.7 66 70.8 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5 6 6.5 7 7.5 8 8.5 9 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 5 26 20 3 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 21.7 19.4 17.9 16.7 15.5 14.7 13.9 13.5 11.8 11 10.1 9.3 8.6 8.2 7.7 7.2 6.8 6.2 5.6 5.1 4.8 4.4 4.1 3.8 3.4 3.1 2.9 2.8 2.6 2.4 2.25 2.1 9.2 10.3 11.2 12 12.9 13.6 14.4 15.4 17 18.2 19.9 21.5 23.2 24.4 26 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 88 95 1120 1063 938 843 773 706 674 640 562 509 483 423 392 367 343 324 320 283 271 244 230 227 207 198 178 172 165 162 161 151 148 144 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Rev. 2.2, 19-Nov-2021 Document Number: 85881 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF58A www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % IRSM (%) Rise time = 0.7 ns to 1 ns Discharge Current IESD 100 % t1 = 10 µs t2 = 1000 µs 100 80 % 90 60 % 53 % 50 40 % 27 % 20 % 10 0% -10 0 10 20 30 40 50 60 70 80 90 100 Time (ns) 20557 t t1 t2 17415 Fig. 4 - Pulse Waveform Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150pF) 180 8 µs to 100 % 100 % f = 1MHz 160 140 80 % SMF43A CD in pF 120 SMF45A IPPM 60 % 20 µs to 50 % 40 % 100 80 SMF48A SMF51A SMF54A SMF58A 60 40 20 % 20 0% 0 0 10 20 30 40 Time (µs) 20548 Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 0.01 1 10 VR in V Fig. 5 - Typical Capacitance CD vs. Reverse Voltage VR 300 10 PPP - Peak Pulse Power (kW) 0.1 22719 Non-repetitive pulse TA = 25 °C f = 1MHz 250 CD in pF 200 1 150 SMF22A 100 50 0.1 0 0.01 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) 17250 Fig. 3 - Peak Pulse Power Rating Rev. 2.2, 19-Nov-2021 SMF24A SMF26A SMF28A SMF30A SMF33A SMF36A SMF40A 22720 0.1 1 10 VR in V Fig. 6 - Typical Capacitance CD vs. Reverse Voltage VR Document Number: 85881 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF58A www.vishay.com 600 Vishay Semiconductors 20 f = 1MHz 500 18 400 16 SMF16A SMF15A VR in V CD in pF SMF14A 300 SMF11A SMF12A 200 SMF13A SMF14A SMF15A SMF 100 SMF16A SMF17A SMF18A SMF20A 14 SMF12A SMF11A SMF10A 12 SMF9V0A 10 0 0.01 SMF13A SMF8V5A TJ = Junction Temperature =  25 °C     8 0.1 1 10 0.01 VR in V 22721 1 Fig. 7 - Typical Capacitance CD vs. Reverse Voltage VR 1200 100 10 000 IR in μA 22724 Fig. 10 - Typical Reverse Voltage VR vs. Reverse Current IR 40 f = 1MHz 1000 SMF33A SMF30A 35 SMF28A SMF26A 30 VR in V CD in pF 800 600 SMF5V0A SMF6V0A SMF6V5A SMF7V0A SMF7V5A SMF8V0A SMF8V0 SMF8V5A SMF9V0A SMF10A 400 200 20 0 SMF24A SMF22A 25 SMF20A SMF18A 20 0.01 0.1 1 15 0.01 10 VR in V 22722 TJ = Junction Temperature =   25 °C   1 100 10 000 IR in μA 22725 Fig. 8 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 11 - Typical Reverse Voltage VR vs. Reverse Current IR 70 10 SMF8V0A 9 SMF17A TJ = Junction Temperature = 25 °C        65 SMF7V5A SMF58A SMF54A SMF7V0A 60 8 SMF51A SMF6V0A 7 SMF5V0A VR in V VR in V SMF6V5A SMF48A 55 SMF45A 6 50 5 45 SMF43A SMF40A SMF36A 4 0.01 22723 TJ = Junction Temperature   =  25 °C 1 100 10 000 IR in μA Fig. 9 - Typical Reverse Voltage VR vs. Reverse Current IR Rev. 2.2, 19-Nov-2021 40 0.01 22726 1 100 10 000 IR in μA Fig. 12 - Typical Reverse Voltage VR vs. Reverse Current IR Document Number: 85881 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF58A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB) 0.85 [0.033] 0.35 [0.014] 0.1 [0.004] 0 [0.000] 5° 5° 1.2 [0.047] 1.7 [0.067] 1.9 [0.075] 0.8 [0.031] Detail Z enlarged 0.1 [0.004] 0.25 [0.010] 1.8 [0.071] min. 1.08 [0.043] 0.88 [0.035] 2.9 [0.114] 2.7 [0.106] 3.9 [0.154] 3.5 [0.138] foot print recommendation: Reflow soldering 1.3 [0.051] 1.4 [0.055] 1.3 [0.051] 2.9 [0.114] Created - Date: 15. February 2005 Rev. 6 - Date: 24.Feb.2021 Document no.: S8-V-3915.01-001 (4) 22989 Rev. 2.2, 19-Nov-2021 Document Number: 85881 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF58A www.vishay.com Vishay Semiconductors ORIENTATION IN CARRIER TAPE - SMF (DO-219AB) Unreeling direction SMF cathode Top view Document no.: S8-V-3717.02-003 (4) Created - Date: 09. Feb. 2010 22670 Rev. 2.2, 19-Nov-2021 Document Number: 85881 6 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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