SMMA511DJ-T1-GE3

New Product SMMA511DJ Vishay Siliconix N- and P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY N-CHANNEL VDS (V) P-CHANNEL • High Quality Manufacturing Process Using SMM Process Flow 12 - 12 RDS(on) (Ω) at VGS = ± 4.5 V 0.040 0.070 • Halogen-free According to IEC 61249-2-21 Definition RDS(on) (Ω) at VGS = ± 2.5 V 0.048 0.100 • TrenchFET® Power MOSFETs RDS(on) (Ω) at VGS = ± 1.8 V 0.063 0.140 4.5 - 4.5 • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Compliant to RoHS Directive 2002/95/EC • Find out more about Vishay’s Medical Products at: www.vishay.com/medical-mosfets ID (A)a Configuration N- and P-Pair PowerPAK SC-70-6 Dual 1 S1 G2 2 G1 3 D1 G1 D2 D1 6 S2 D1 APPLICATION EXAMPLES D2 G2 5 2.05 mm 4 S2 S1 D2 N-Channel MOSFET P-Channel MOSFET 2.05 mm Marking Code MAX Part # code XXX Lot Traceability and Date code • Medical Implantable Applications Including - Drug Delivery Systems - Defibrillators - Pacemakers - Hearing Aids - Other Implantable Devices • Load Switch for Portable Devices ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and Halogen-free SMMA511DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage SYMBOL VDS N-CHANNEL 12 P-CHANNEL - 12 Gate-Source Voltage VGS ±8 ±8 TC = 25 °Ca 4.5 - 4.5 TC = 70 °Ca 4.5 - 4.5 4.5 - 4.3 4.5 - 3.4 20 - 10 4.5 - 4.5 1.6 - 1.6 TC = 25 °C 6.5 6.5 TC = 70 °C 5 5 1.9 1.9 Continuous Drain Current (TJ = 150 °C) TA = 25 °Ca, b, c ID TA = 70 °Ca, b, c Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C a TA = 25 °Cb, c TA = 25 °Ca, c IS PD TA = 70 °Ca, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 1.2 TJ, Tstg UNIT V A W 1.2 - 55 to + 150 260 °C www.vishay.com 1 New Product SMMA511DJ Vishay Siliconix THERMAL RESISTANCE RATINGS N-CHANNEL PARAMETER Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) P-CHANNEL SYMBOL TYP. MAX. TYP. MAX. t≤5s RthJA 52 65 52 65 Steady State RthJC 12.5 16 12.5 16 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Package limit is ± 4.5 A. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS VGS = 0 V, ID = 250 µA N-Ch 12 - - VGS = 0 V, ID = - 250 µA P-Ch - 12 - - ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs ID = 250 µA N-Ch - 12 - ID = - 250 µA P-Ch - -7 - ID = 250 µA N-Ch - - 2.8 - ID = - 250 µA P-Ch - 2.1 - VDS = VGS, ID = 250 µA N-Ch 0.4 - 1 VDS = VGS, ID = - 250 µA P-Ch - 0.4 - -1 VDS = 0 V, VGS = ± 8 V N-Ch - - ± 100 P-Ch - - ± 100 VGS = 0 V VDS = 12 V N-Ch - - 1 VGS = 0 V VDS = - 12 V P-Ch - - -1 VGS = 0 V VDS = 12 V, TJ = 55 °C N-Ch - - 10 VGS = 0 V VDS = - 12 V, TJ = 55 °C P-Ch - - - 10 VGS = 4.5 V VDS ≥ 5 V N-Ch 15 - - VGS = - 4.5 V VDS ≤ - 5 V P-Ch -8 - - VGS = 4.5 V ID = 4.2 A N-Ch - 0.033 0.040 VGS = - 4.5 V ID = - 3.3 A P-Ch - 0.058 0.070 VGS = 2.5 V ID = 3.8 A N-Ch - 0.039 0.048 VGS = - 2.5 V ID = - 2.8 A P-Ch - 0.082 0.100 VGS = 1.8 V ID = 1.6 A N-Ch - 0.051 0.063 VGS = - 1.8 V ID = - 0.7 A P-Ch - 0.111 0.140 VDS = 10 V, ID = 4.2 A N-Ch - 13 - VDS = - 10 V, ID = - 3.3 A P-Ch - 9 - V mV/°C V nA µA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance www.vishay.com 2 Crss N-Channel VDS = 6 V, f = 1 MHz VGS = 0 V P-Channel VDS = - 6 V, f = 1 MHz N-Ch - 400 - P-Ch - 400 - N-Ch - 120 - P-Ch - 140 - N-Ch - 70 - P-Ch - 100 - pF Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamicb Total Gate Charge Qg VGS = 8 V VDS = 6 V, ID = 5.5 A N-Ch - 7.5 12 VGS = - 8 V VDS = - 6 V, ID = - 4.3 A P-Ch - 8 12 N-Ch VGS = 4.5 V VGS = - 4.5 V Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time tr td(off) Fall Time Turn-On Delay Time VGS = 4.5 V 6.8 - 5 7.5 N-Ch - 0.6 - P-Channel VDS = - 6 V, ID = - 4.3 A P-Ch - 0.8 - N-Ch - 0.8 - P-Ch - 1.4 - N-Ch - 2.5 - P-Ch - 7 - N-Ch - 5 10 P-Ch - 15 25 N-Ch - 15 25 VGS = - 4.5 V f = 1 MHz N-Channel VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 4.5 V, Rg = 1 Ω tf td(on) Rise Time Turn-Off Delay Time VGS = - 4.5 V 4.5 P-Ch td(on) Rise Time Turn-Off Delay Time VGS = 4.5 V - N-Channel VDS = 6 V, ID = 5.5 A tr td(off) Fall Time N-Channel VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 10 V, Rg = 1 Ω tf P-Ch - 25 40 N-Ch - 35 55 P-Ch - 20 30 N-Ch - 15 25 P-Ch - 10 15 N-Ch - 5 10 P-Ch - 5 10 N-Ch - 10 15 P-Ch - 12 20 N-Ch - 15 25 P-Ch - 20 30 N-Ch - 10 15 P-Ch - 10 15 nC Ω ns Source-Drain Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage TC = 25 °C IS ISM VSD VGS = 0 V N-Ch - - 4.5 P-Ch - - - 4.5 N-Ch - - 20 - 10 P-Ch - - IS = 4.4 A N-Ch - 0.8 1.2 IS = - 3.4 A P-Ch - - 0.8 - 1.2 N-Ch - 15 30 P-Ch - 30 60 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch - 8 20 P-Ch - 12 24 Reverse Recovery Fall Time ta P-Channel IF = - 3.4 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch - 8.5 - P-Ch - 14 - N-Ch - 8.5 - P-Ch - 16 - Reverse Recovery Rise Time tb A V ns nC ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 3 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 10 VGS = 5 V thru 2.5 V 8 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.10 600 VGS = 1.8 V 0.09 500 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.07 0.06 0.05 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 400 300 200 Coss 100 Crss 0.03 0 0 4 8 12 16 20 0 3 ID - Drain Current (A) 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 ID = 5.5 A 1.5 1.4 6 VDS = 6 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.0 VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A 1.3 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.12 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.10 0.08 0.06 ID = 4.2 A, 125 °C 0.04 ID = 4.2 A, 25 °C 0.1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Soure-Drain Diode Forward Voltage 0.8 20 0.7 ID = 250 µA 15 Power (W) VGS(th) (V) 0.6 0.5 0.4 10 0.3 5 0.2 0.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 5 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 8 14 Power Dissipation (W) I D - Drain Current (A) 12 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 7 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 2.0 VGS = 5 V thru 2.5 V VGS = 2 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 VGS = 1.5 V 2 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C TC = - 55 °C 0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 700 0.30 600 0.25 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.3 0.20 0.15 VGS = 2.5 V 0.10 500 Ciss 400 300 Coss 200 Crss 0.05 100 VGS = 4.5 V 0 0.00 0 2 4 6 8 0 10 4 6 8 10 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 12 1.6 8 ID = 3.3 A ID = 4.3 A VDS = 6 V 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 I D - Drain Current (A) VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.20 10 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.3 A TJ = 25 °C 1 0.15 0.10 125 °C 0.05 25 °C 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 20 0.8 0.7 0.6 Power (W) V GS(th) (V) 15 ID = 250 µA 0.5 5 0.4 0.3 - 50 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 10 I D - Drain Current (A) Limited by R DS(on)* 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 9 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 8 10 Power Dissipation (W) I D - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 New Product SMMA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65281. Document Number: 65281 S09-2019-Rev. B, 05-Oct-09 www.vishay.com 11 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000