New Product
SMMB911DK
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• High Quality Manufacturing Process Using SMM
Process Flow
- 20
RDS(on) (Ω) at VGS = - 4.5 V
0.295
RDS(on) (Ω) at VGS = - 2.5 V
0.420
• Halogen-free According to IEC 61249-2-21
Definition
RDS(on) (Ω) at VGS = - 1.8 V
0.560
• TrenchFET® Power MOSFET
ID (A)f
- 2.6
Configuration
Dual
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
PowerPAK SC75-6L-Dual
S1
S2
1
S1
2
G1
G1
3
D2
D1
D1
6
G2
APPLICATION EXAMPLES
D2
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch, PA Switch and Battery Switch for Portable
Devices
G2
5
1.60 mm
4
S2
1.60 mm
D1
D2
P-Channel MOSFET P-Channel MOSFET
Marking Code
MAX
Part # code
XXX
Lot Traceability
and Date code
ORDERING INFORMATION
Package
PowerPAK SC-75
Lead (Pb)-free and Halogen-free
SMMB911DK-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °Ca, b
ID
TC = 25 °C
TA = 25
°Ca, b
IS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25
°Ca, b
Soldering Recommendations (Peak
Document Number: 65174
S09-2019-Rev. B, 05-Oct-09
Temperature)c, d
A
-5
- 2.6
- 0.9
3.1
PD
TA = 70 °Ca, b
Operating Junction and Storage Temperature Range
- 2.1
- 1.5
- 1.2
IDM
Continuous Source-Drain Diode Current
V
- 2.6
TA = 70 °Ca, b
Pulsed Drain Current
UNIT
2
1.1
W
0.7
TJ, Tstg
- 55 to + 150
°C
260
°C
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New Product
SMMB911DK
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
t≤5s
RthJA
90
115
Steady State
RthJC
32
40
Junction-to-Ambienta, e
Junction-to-Case (Drain)
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 125 °C/W.
f. Based on TC = 25 °C.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = - 250 µA
- 20
-
-
-
V
- 19
-
-
1.9
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
mV/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.4
-
-1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 0 V
VDS = - 20 V
-
-
-1
VGS = 0 V
VDS = - 20 V, TJ = 55 °C
-
-
- 10
VGS = - 4.5 V
VDS ≤ 5 V
5
-
-
VGS = - 4.5 V
ID = - 1.5 A
-
0.242
0.295
VGS = - 2.5 V
ID = - 1.2 A
-
0.345
0.420
VGS = - 1.8 V
ID = - 0.18 A
-
0.455
0.560
-
3
-
VDS = - 10 V, ID = - 1.5 A
µA
A
Ω
S
Dynamicb
-
115
-
VGS = 0 V
VDS = - 10 V, f = 1 MHz
-
30
-
-
20
-
VGS = - 8 V
VDS = - 10 V, ID = - 1.7 A
-
2.6
4.0
-
1.6
2.5
-
0.3
-
-
0.5
-
-
7
-
-
12
20
-
45
70
-
10
15
tf
-
31
50
td(on)
-
3
10
-
25
40
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = - 4.5 V
VDS = - 10 V, ID = - 1.7 A
f = 1 MHz
td(on)
tr
td(off)
tr
td(off)
VDD = - 10 V, RL = 7.1 Ω
ID ≅ - 1.4 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 7.1 Ω
ID ≅ - 1.4 A, VGEN = - 8 V, Rg = 1 Ω
tf
-
10
15
-
10
15
-
-
- 2.6
-
-
5
pF
nC
Ω
ns
Source-Drain Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
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IS
ISM
TC = 25 °C
A
Document Number: 65174
S09-2019-Rev. B, 05-Oct-09
New Product
SMMB911DK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VSD
IS = - 1.4 A, VGS = 0 V
-
- 0.8
- 1.2
V
Source-Drain Body Diode Characteristics
Body Diode Voltage
Body Diode Reverse Recovery Time
trr
-
25
50
ns
Body Diode Reverse Recovery Charge
Qrr
-
26
50
nC
Reverse Recovery Fall Time
ta
-
19
-
Reverse Recovery Rise Time
tb
-
6
-
IF = - 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
5
1.0
3V
VGS = 5 V thru 3.5 V
0.8
2.5 V
I D - Drain Current (A)
I D - Drain Current (A)
4
3
2V
2
1.5 V
1
0.6
0.4
TC = 125 °C
0.2
25 °C
- 55 °C
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
3.0
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
200
0.8
0.7
VGS = 1.8 V
160
0.6
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.5
VDS - Drain-to-Source Voltage (V)
VGS = 2.5 V
0.5
0.4
Ciss
120
80
Coss
40
VGS = 4.5 V
0.3
Crss
0
0.2
0
1
2
3
4
5
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 65174
S09-2019-Rev. B, 05-Oct-09
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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New Product
SMMB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
8
1.6
VGS = 4.5 V, 2.5 V, 1.8 V
ID = 1.5 A
4
VDS = 16 V
2
(Normalized)
1.4
VDS = 10 V
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 1.7 A
1.2
1.0
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
0.6
- 50
3.0
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
0.8
10
ID = 1.5 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.7
TJ = 150 °C
1
TJ = 25 °C
0.6
125 °C
0.5
25 °C
0.4
0.3
0.2
0.1
0.0
0.1
0.2
0.4
0.6
0.8
1.0
0
1.2
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
0.8
0.7
ID = 250 µA
6
Power (W)
VGS(th) (V)
1
VSD - Source-to-Drain Voltage (V)
0.6
0.5
4
2
0.4
0.3
- 50
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4
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Document Number: 65174
S09-2019-Rev. B, 05-Oct-09
New Product
SMMB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
I D - Drain Current (A)
Limited by R DS(on)*
IDM Limited
100 µs
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
3.0
Power Dissipation (W)
ID - Drain Current (A)
2.5
2.0
1.5
1.0
3
2
1
0.5
0
0.0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65174
S09-2019-Rev. B, 05-Oct-09
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New Product
SMMB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65174.
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Document Number: 65174
S09-2019-Rev. B, 05-Oct-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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