SMP3V3 thru SMP36A
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Vishay General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Available in unidirectional
• 400 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
SMP (DO-220AA)
Anode
• Low incremental surge resistance
Cathode
LINKS TO ADDITIONAL RESOURCES
3D 3D
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
3D Models
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PRIMARY CHARACTERISTICS
VBR uni-directional
4.10 V to 44.2 V
VWM
3.3 V to 36 V
PPPM
400 W
IFSM
40 A
TJ max.
150 °C
Polarity
Unidirectional
Package
SMP (DO-220AA)
MECHANICAL DATA
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak pulse current with a 10/1000 μs
SYMBOL
VALUE
UNIT
PPPM
400
W
IPPM
See table next page
A
waveform (1)
Peak forward surge current 10 ms single half
sine-wave (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A (3)
VF
2.5
V
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 25-Apr-2022
Document Number: 88481
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
7.3
MIN.
MAX.
AC
4.10
5.10
1.0
3.3
200
54.8
SMP5.0A
AE
6.40
7.07
10
5.0
150
43.5
9.2
SMP6.0A
AG
6.67
7.37
10
6.0
600
38.8
10.3
SMP6.5A
AK
7.22
7.98
10
6.5
100
35.7
11.2
SMP7.0A
AM
7.78
8.60
10
7.0
50
33.3
12.0
SMP7.5A
AN
8.33
9.21
1.0
7.5
50
31.0
12.9
SMP8.0A
AR
8.89
9.83
1.0
8.0
20
29.4
13.6
SMP11A
AZ
12.2
13.5
1.0
11
1.0
22.0
18.2
SMP12A
BE
13.3
14.7
1.0
12
1.0
20.1
19.9
SMP13A
BG
14.4
15.9
1.0
13
1.0
18.6
21.5
SMP14A
BK
15.6
17.2
1.0
14
1.0
17.2
23.2
SMP15A
BM
16.7
18.5
1.0
15
1.0
16.4
24.4
SMP16A
BP
17.8
19.7
1.0
16
1.0
15.4
26.0
SMP17A
BR
18.9
20.9
1.0
17
1.0
14.5
27.6
SMP18A
BT
20.0
22.1
1.0
18
1.0
13.7
29.2
SMP20A
BV
22.2
24.5
1.0
20
1.0
12.3
32.4
SMP22A
BX
24.4
26.9
1.0
22
1.0
11.3
35.5
SMP24A
BZ
26.7
29.5
1.0
24
1.0
10.3
38.9
SMP26A
CE
28.9
31.9
1.0
26
1.0
9.5
42.1
SMP28A
CG
31.1
34.4
1.0
28
1.0
8.8
45.4
SMP30A
CK
33.3
36.8
1.0
30
1.0
8.3
48.4
SMP33A
CM
36.7
40.6
1.0
33
1.0
7.5
53.3
SMP36A
CP
40.0
44.2
1.0
36
1.0
6.9
58.1
SMP3V3
Notes
(1) V
BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Typical thermal resistance, junction to lead (1)
RθJL
50
°C/W
Typical thermal resistance, junction to ambient (2)
RθJA
250
°C/W
Notes
Mounted on PCB with 5.0 mm x 5.0 mm copper pad areas attached to each terminal
(2) Mounted on minimum recommended pad layout
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMP3V3-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SMP3V3-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
SMP11A-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SMP11A-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
Revision: 25-Apr-2022
Document Number: 88481
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
Measured at
Zero Bias
1000
1
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.1
0.1
100
10
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 000
1
100
10
td - Pulse Width (µs)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
75
50
25
0
0
Measured at
Stand-Off
Voltage, VWM
10
1
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) of Current (IPP)
Derating in Percentage (%)
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
10
25
50
75
100
125
150
175
200
1000
100
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
t - Pulse Duration (s)
Fig. 2 - Pulse Derating Curve
Fig. 5 - Typical Transient Thermal Impedance
IPPM - Peak Pulse Current, % IRSM
150
tr = 10 µs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 25-Apr-2022
Document Number: 88481
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMP (DO-220AA)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
Mounting pad layout
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 25-Apr-2022
Document Number: 88481
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000