SQ1421EDH-T1_GE3

SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Typical ESD Protection: 800 V • Compliant to RoHS Directive 2002/95/EC - 60 RDS(on) () at VGS = - 10 V 0.290 RDS(on) () at VGS = - 4.5 V 0.395 ID (A) - 1.6 Configuration Single SOT-363 SC-70 (6-LEADS) D 1 6 (1, 2, 5, 6) D D (3) G D G 5 2 3 4 D 9B XX YY Marking Code Lot Traceability and Date Code S Part # Code Top View (4) S P-Channel MOSFET ORDERING INFORMATION Package SC-70 Lead (Pb)-free and Halogen-free SQ1421EEH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V - 1.6 - 1.4 IS - 1.6 IDM - 6.7 IAS -8 EAS 3.2 PD TC = 125 °C UNIT 3.3 1.1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 125 RthJF 45 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Foot (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2128 Rev. B, 31-Oct-11 1 Document Number: 67057 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EEH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage - 60 - - - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 12 V - - ±5 μA VDS = 0 V, VGS = ± 20 V - - ±5 mA - - -1 IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0 V, ID = - 250 μA VDS = VGS, ID = - 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs VGS = 0 V VDS = - 60 V VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS- 5 V -5 - - VGS = - 10 V ID = - 2 A - 0.230 0.290 VGS = - 10 V ID = - 2 A, TJ = 125 °C - - 0.470 VGS = - 10 V ID = - 2 A, TJ = 175 °C - - 0.566 VGS = - 4.5 V ID = - 1 A - 0.305 0.395 VDS = - 10 V, ID = - 1.5 A - 3 - - 284 355 V μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VGS = - 4.5 V Rg VDS = - 25 V, f = 1 MHz VDS = - 30 V, ID = - 1 A f = 1 MHz td(on) tr td(off) VDD = - 30 V, RL = 30  ID  - 1 A, VGEN = - 4.5 V, Rg = 1  tf - 36 45 - 28 35 - 3.6 5.4 - 1.2 - - 1.7 - 3.1 6.05 9 - 44 66 - 25 38 - 13 20 - 9 14 pF nC  ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 0.5 A, VGS = 0 V - - - 6.7 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2128 Rev. B, 31-Oct-11 2 Document Number: 67057 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.005 10-1 10-2 IGSS - Gate Current (A) IGSS - Gate Current (A) 0.004 0.003 T J = 25 °C 0.002 10-3 10-4 T J = 150 °C 10-5 10-6 T J = 25 °C 10-7 10-8 0.001 10-9 10-10 0.000 0 5 10 15 20 0 25 5 10 15 20 25 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 8 10 VGS = 10 V thru 6 V 6 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 8 6 4 VGS = 4 V 4 TC = 25 °C 2 2 TC = 125 °C VGS = 3 V 0 0 2 4 6 8 0 10 Output Characteristics 4 6 8 10 Transfer Characteristics 5 1.0 4 0.8 TC = - 55 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) TC = 25 °C 3 TC = 125 °C 2 1 0 0.0 TC = - 55 °C 0 VGS = 4.5 V 0.6 0.4 VGS = 10 V 0.2 0.4 0.8 1.2 1.6 0.0 2.0 0 ID - Drain Current (A) 4 6 8 10 ID - Drain Current (A) Transconductance S11-2128 Rev. B, 31-Oct-11 2 On-Resistance vs. Drain Current 3 Document Number: 67057 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 500 6 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 400 Ciss 300 200 100 Coss 5 ID = 1 A VDS = 30 V 4 3 2 1 Crss 0 0 10 20 30 40 50 0 60 0 1 2 VDS - Drain-to-Source Voltage (V) 5 Gate Charge 1.0 100 0.7 10 IS - Source Current (A) VGS(th) Variance (V) 4 Qg - Total Gate Charge (nC) Capacitance ID = 250 μA 0.4 3 ID = 5 mA 0.1 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Threshold Voltage Source Drain Diode Forward Voltage 1.0 2.5 0.8 2.1 RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance (Ω) ID = 2 A 0.6 TJ = 150 °C 0.4 TJ = 25 °C 0.2 2 4 6 8 0.5 - 50 - 25 10 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S11-2128 Rev. B, 31-Oct-11 VGS = 4.5 V 1.3 0.9 0.0 0 VGS = 10 V 1.7 On-Resistance vs. Junction Temperature 4 Document Number: 67057 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) VDS - Drain-to-Source Voltage (V) - 60 ID = 1 mA - 64 - 68 - 72 - 76 - 80 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 100 ID - Drain Current (A) IDM Limited ID Limited 10 100 μs Limited by RDS(on)* 1 1 ms 10 ms 100 ms 1 s,10 s, DC 0.1 0.01 0.01 TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S11-2128 Rev. B, 31-Oct-11 5 Document Number: 67057 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EEH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67057. S11-2128 Rev. B, 31-Oct-11 6 Document Number: 67057 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000