SQ1464EEH
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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
SOT-363
SC-70 Single (6 leads)
D
6
• TrenchFET® power MOSFET
S
4
D
5
• AEC-Q101 qualified
• 100 % Rg tested
• Typical ESD protection: 800 V
1
D
Top View
2
D
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
G
D
Marking code: 8B
PRODUCT SUMMARY
G
VDS (V)
60
RDS(on) () at VGS = 1.5 V
1.41
ID (A)
0.44
Configuration
Single
Package
SC-70
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
±8
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
IS
Pulsed drain current b
Maximum power dissipation b
ID
IDM
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
PD
UNIT
V
0.44
0.25
0.54
A
1.7
0.43
0.14
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
460
RthJF
350
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-foot (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S18-0137 Rev. A, 29-Jan-18
Document Number: 75570
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1464EEH
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
0.45
0.6
1
VDS = 0 V, VGS = ± 3 V
-
-
± 100
VDS = 0 V, VGS = ± 8 V
-
-
100
Gate-source leakage
IGSS
VGS = 0 V
VDS = 60 V
-
-
1
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
On-state drain current a
ID(on)
VGS = 1.5 V
VDS 5 V
0.5
-
-
VGS = 1.5 V
ID = 2 A
-
0.8
1.41
VGS = 1.5 V
ID = 1.2 A, TJ = 125 °C
-
-
2.4
VGS = 1.5 V
ID = 1.2 A, TJ = 175 °C
-
-
3.1
-
5.5
-
-
110
140
-
19
24
-
12
15
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 1 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
Rise time c
Turn-off delay time
Fall time c
VDS = 25 V, f = 1 MHz
VGS = 4.5 V
VDS = 30 V, ID = 2.8 A
f = 1 MHz
td(on)
tr
c
VGS = 0 V
td(off)
VDD = 30 V, RL = 30
ID 1 A, VGEN = 4.5 V, Rg = 1
tf
-
2.7
4.1
-
0.25
-
-
0.35
-
5.8
9
15.5
-
12
18
-
21
32
-
8
12
-
7
11
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 0.8 A, VGS = 0
-
-
1.6
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0137 Rev. A, 29-Jan-18
Document Number: 75570
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1464EEH
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
0.0010
10-1
10000
10000
10-2
100
TJ = 25 °C
0.0002
10-3
10-4
1000
10-5
1st line
2nd line
0.0004
2nd line
IGSS - Gate Current (A)
1000
0.0006
1st line
2nd line
2nd line
IGSS - Gate Current (A)
0.0008
TJ = 150 °C
10-6
TJ = 25 °C
10-7
100
10-8
10-9
0.0000
10-10
10
0
3
6
9
12
15
10
0
3
6
15
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
Axis Title
Axis Title
10
10000
6
10000
VGS = 5 V thru 2 V
1st line
2nd line
3
VGS = 1.5 V
2
100
VGS = 1 V
8
TC = 25 °C
1000
6
1st line
2nd line
1000
4
2nd line
gfs - Transconductance (S)
TC = -55 °C
5
2nd line
ID - Drain Current (A)
12
VGS - Gate-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
1
9
4
100
TC = 125 °C
2
VGS = 0.5 V
0
0
10
0
2
4
6
8
10
0.0
10
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
2nd line
ID - Drain Current (A)
2nd line
Output Characteristics
Transconductance
Axis Title
2.0
Axis Title
6
3
10000
10000
TC = -55 °C
2.5
1000
3
TC = 125 °C
2
100
1
2
1000
1.5
TC = 25 °C
1
100
0.5
0
10
0
1
2
3
4
5
1st line
2nd line
4
2nd line
ID - Drain Current (A)
TC = 25 °C
1st line
2nd line
2nd line
ID - Drain Current (A)
5
TC = -55 °C
TC = 125 °C
0
10
0
0.6
1.2
1.8
2.4
VGS - Gate-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
Transfer Characteristics
S18-0137 Rev. A, 29-Jan-18
3
Document Number: 75570
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1464EEH
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
VGS = 4.5 V
VGS = 2.5 V
1000
2.0
1.5
VGS = 1.5 V
1.0
100
VGS = 1.8 V
0.5
0
2nd line
RDS(on) - On-Resistance (Ω)
ID = 2 A
2.5
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
10000
3.0
0
25
50
VGS = 1.5 V
1.2
VGS = 1.8 V
VGS = 2.5 V
0.8
0.4
VGS = 4.5 V
0.0
10
-50 -25
1.6
0
75 100 125 150 175
0.8
1.6
2.4
3.2
4
ID - Drain Current (A)
2nd line
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
Axis Title
Axis Title
10000
2.4
10000
TJ = 150 °C
1.2
100
TJ = 25 °C
0.6
0.0
0.9
1.8
2.7
3.6
1000
0.1
TJ = 25 °C
100
0.01
10
0
TJ = 150 °C
1st line
2nd line
1000
2nd line
IS - Source Current (A)
1.8
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1
4.5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
1.0
0.3
ID = 250 μA
ID = 5 mA
0.6
0.4
ID = 20 μA
0.2
2nd line
VGS(th) Variance (V)
2nd line
VGS(th) Variance (V)
0.8
0.1
ID = 5 mA
-0.1
-0.3
ID = 10 μA
ID = 250 μA
ID = 1 μA
0
-0.5
-50 -25
0
25
50
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
TJ - Temperature (°C)
2nd line
Threshold Voltage
Threshold Voltage
S18-0137 Rev. A, 29-Jan-18
Document Number: 75570
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1464EEH
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
ID = 1 mA
83
80
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
86
77
74
71
68
65
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
Axis Title
10000
100
Limited by RDS(on) (1)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
IDM limited
10
1
1 ms, 10 ms
100
100 ms
0.1
BVDSS limited
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
1 s, 10 s
DC
10
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S18-0137 Rev. A, 29-Jan-18
Document Number: 75570
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1464EEH
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75570.
S18-0137 Rev. A, 29-Jan-18
Document Number: 75570
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
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Document Number: 91000
