SQ1563AEH-T1_GE3

SQ1563AEH www.vishay.com Vishay Siliconix N-and P-Channel 20 V (D-S) 175 °C MOSFET FEATURES SOT-363 SC-70 Dual (6 leads) D1 6 G2 5 • TrenchFET® power MOSFET S2 4 • 100 % Rg and UIS tested • AEC-Q101 qualified c • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S1 Top View 2 G1 3 D2 D1 S2 Marking Code: 9Q G2 PRODUCT SUMMARY N-CHANNEL VDS (V) P-CHANNEL 20 -20 RDS(on) () at VGS = ± 4.5 V 0.280 0.575 RDS(on) () at VGS = ± 2.5 V 0.360 1.300 RDS(on) () at VGS = ± 1.8 V 0.450 1.500 ID (A) 0.85 -0.85 Configuration Package G1 S1 D2 N-Channel MOSFET P-Channel MOSFET N & P Pair SC-70 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage VDS 20 -20 Gate-source voltage VGS Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C ID ±8 0.85 -0.85 0.85 -0.79 IS 0.85 -0.85 IDM 3.3 -3.3 IAS 3.5 -1.4 EAS 0.6 0.1 1.5 1.5 0.5 0.5 PD TJ, Tstg Operating junction and storage temperature range -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b SYMBOL N-CHANNEL P-CHANNEL RthJA 220 220 RthJF 100 100 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). S16-2472-Rev. B, 12-Dec-16 Document Number: 62986 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA N-Ch 20 - - VGS = 0 V, ID = -250 μA P-Ch -20 - - VDS = VGS, ID = 250 μA N-Ch 0.45 0.6 1.5 VDS = VGS, ID = -250 μA P-Ch -0.45 -0.6 -1.5 N-Ch - - ± 100 P-Ch - - ± 100 N-Ch - - 1 VDS = 0 V, VGS = ± 8 V VGS = 0 V Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IDSS ID(on) RDS(on) gfs VDS = 20 V VGS = 0 V VDS = -20 V P-Ch - - -1 VGS = 0 V VDS = 20 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = -20 V, TJ = 125 °C P-Ch - - -50 VGS = 0 V VDS = 20 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = -20 V, TJ = 175 °C P-Ch - - -150 VGS = 4.5 V VDS =  5 V N-Ch 2 - - VGS = -4.5 V VDS =  -5 V P-Ch -2 - - VGS = 4.5 V ID = 0.85 A N-Ch - 0.150 0.280 VGS = -4.5 V ID = -0.80 A P-Ch - 0.500 0.575 VGS = 2.5 V ID = 0.85 A N-Ch - 0.180 0.360 VGS = -2.5 V ID = -0.60 A P-Ch - 1.050 1.300 VGS = 1.8 V ID = 0.85 A N-Ch - 0.210 0.450 VGS = -1.8 V ID = -0.20 A P-Ch - 1.200 1.500 VDS = 10 V, ID = 0.85 A N-Ch - 2.6 - VDS = -10 V, ID = -0.85 A P-Ch - 1.5 - V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Total gate charge Qg Gate-source charge Qgs Gate-drain charge c Qgd S16-2472-Rev. B, 12-Dec-16 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch - 67 89 VGS = 0 V VDS = -10 V, f = 1 MHz P-Ch - 63 84 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch - 22 29 VGS = 0 V VDS = -10 V, f = 1 MHz P-Ch - 26 34 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch - 10 13 VGS = 0 V P-Ch - 10 13 f = 1 MHz VDS = -10 V, f = 1 MHz N-Ch - 3.8 11.6 f = 1 MHz P-Ch - 3.1 9.5 VGS = 4.5V VDS = 10 V, ID = 0.85 A N-Ch - 0.93 1.25 VGS = -4.5 V VDS = -10 V, ID = -0.85 A P-Ch - 1.0 1.33 VGS = 4.5 V VDS = 10 V, ID = 0.85 A N-Ch - 0.16 - VGS = -4.5 V VDS = -10 V, ID = -0.85 A P-Ch - 0.15 - VGS = 4.5 V VDS = 10 V, ID = 0.85 A N-Ch - 0.38 - VGS = -4.5 V VDS = -10 V, ID = -0.85 A P-Ch - 0.44 - pF  nC Document Number: 62986 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  N-Ch - 3 6 VDD = -10 V, RL = 20  ID  -0.5 A, VGEN = -4.5 V, Rg = 1  P-Ch - 2 4 VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  N-Ch - 21 27 VDD = -10 V, RL = 20  ID  -0.5 A, VGEN = -4.5 V, Rg = 1  P-Ch - 22 28 VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  N-Ch - 20 25 VDD = -10 V, RL = 20  ID  -0.5 A, VGEN = -4.5 V, Rg = 1  P-Ch - 28 35 VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  N-Ch - 17 24 VDD = 10 V, RL = 20  ID  -0.5 A, VGEN = -4.5 V, Rg = 1  P-Ch - 20 25 N-Ch - - 3.3 P-Ch - - -3.3 IS = 0.85 A N-Ch - 0.9 1.2 IS = -0.85 A P-Ch - -0.9 -1.2 ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD A V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2472-Rev. B, 12-Dec-16 Document Number: 62986 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 2.0 VGS = 5 V thru VGS = 1.5 V 1.6 ID - Drain Current (A) ID - Drain Current (A) 1.6 1.2 0.8 0.4 1.2 TC = 25 °C 0.8 0.4 VGS = 1 V TC = 125 °C 0.2 0.4 0.6 0.8 0.0 0.0 1.0 TC = - 55 °C 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 100 0.4 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 0.0 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V VGS = 4.5 V 0.1 2.5 Ciss 60 40 Coss 20 Crss 0.0 0.0 0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 5 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 ID = 0.85 A VDS = 10 V 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 ID = 0.85 A 1.7 VGS = 2.5 V 1.4 1.1 VGS = 4.5 V 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S16-2472-Rev. B, 12-Dec-16 175 Document Number: 62986 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.8 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.6 0.4 TJ = 150 °C 0.2 TJ = 25 °C 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage 3 4 5 On-Resistance vs. Gate-to-Source Voltage 0.5 VDS - Drain-to-Source Voltage (V) 30 0.3 VGS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 0.1 ID = 5 mA - 0.1 ID = 250 μA - 0.3 - 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 1 mA 28 26 24 22 20 - 50 - 25 175 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature 10 ID - Drain Current (A) IDM Limited 1 Limited by RDS(on)* 1 ms ID Limited 0.1 10 ms 100 ms 1 s, 10 s, DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area S16-2472-Rev. B, 12-Dec-16 Document Number: 62986 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 220 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 t1 t2 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S16-2472-Rev. B, 12-Dec-16 Document Number: 62986 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3 2.5 VGS = 5 V thru 3 V 2.0 ID - Drain Current (A) ID - Drain Current (A) 2 VGS = 2.5 V 2 1 VGS = 2 V 1 1.5 TC = 25 °C 1.0 0.5 VGS = 1.5 V TC = 125 °C VGS = 1 V 0 0 TC = - 55 °C 0.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 150 4 120 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 3 VGS = 1.8 V 2 90 Ciss 60 VGS = 2.5 V 1 5 Coss 30 VGS = 4.5 V Crss 0 0.0 0.4 0.8 1.2 1.6 0 2.0 0 ID - Drain Current (A) 5 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.5 5 0.3 4 ID = -0.85 A VDS = 10 V VGS(th) Variance (V) VGS - Gate-to-Source Voltage (V) 20 3 2 ID = 250 μA 0.1 ID = 5 mA - 0.1 - 0.3 1 0 0.0 0.3 0.6 0.9 1.2 - 0.5 - 50 - 25 0 25 50 75 100 Qg - Total Gate Charge (nC) TJ - Temperature (°C) Gate Charge Threshold Voltage S16-2472-Rev. B, 12-Dec-16 125 150 175 Document Number: 62986 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 TJ = 150 °C 1 4 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 0.1 TJ = 25 °C 0.01 3 2 TJ = 150 °C 1 TJ = 25 °C 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage 5 On-Resistance vs. Gate-to-Source Voltage 2.0 - 20 ID = 0.85 A VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) 2 3 4 VGS - Gate-to-Source Voltage (V) 1.7 VGS = 2.5 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 - 21 ID = 1 mA - 22 - 23 - 24 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature 10 ID - Drain Current (A) IDM Limited 1 Limited by RDS(on)* 1 ms ID Limited 0.1 10 ms 100 ms 1 s, 10 s, DC BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S16-2472-Rev. B, 12-Dec-16 Document Number: 62986 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1563AEH www.vishay.com Vishay Siliconix P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 220 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 t1 t2 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.             Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62986. S16-2472-Rev. B, 12-Dec-16 Document Number: 62986 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN917 Dual-Channel LITTLE FOOT ® 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part INTRODUCTION The new dual 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the dual-channel version. 87 (mil) 26 (mil) 6 5 4 96 (mil) 71 (mil) 48 (mil) 23 (mil) PIN-OUT Figure 1 shows the pin-out description and pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device. 61 (mil) 1 2 3 0.0 (mil) 8 (mil) 26 (mil) SOT-363 SC-70 (6-LEADS) 16 (mil) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View Fig. 1 For package dimensions see outline drawing SC-70 (6-Leads) (www.vishay.com/doc?71154) See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended. Increasing the drain pad pattern (figure 2) yields a reduction in thermal resistance and is a preferred footprint. Revision: 15-Apr-13 EVALUATION BOARD FOR THE DUAL-CHANNEL SC70-6 The 6-pin SC-70 evaluation board (EVB) shown in figure 3 measures 0.6 in. by 0.5 in. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows for examination from the outer pins to the 6-pin DIP connections, permitting test sockets to be used in evaluation testing. The thermal performance of the dual 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was then repeated using the 1-inch2 PCB with dual-side copper coating. A helpful way of displaying the thermal performance of the 6-pin SC-70 dual copper leadframe is to compare it to the traditional Alloy 42 version. Document Number: 75130 1 For technical questions, contact: powermosfettechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 APPLICATION NOTE BASIC PAD PATTERNS Fig. 2 SC-70 (6 leads) Dual Application Note AN917 www.vishay.com Vishay Siliconix Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part Front of Board SC70-6 Back of Board SC70-6 S1 D1 G1 G2 D2 S2 vishay.com SC70−6 DUAL Fig. 3 THERMAL PERFORMANCE COOPER LEADFRAME Junction-to-Foot Thermal Resistance (the Package Performance) ROOM AMBIENT 25 °C Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the drain lead of the device as it connects with the body. The junction-to-foot thermal resistance for this device is typically 80 °C/W, with a maximum thermal resistance of approximately 100 °C/W. This data compares favorably with another compact, dual-channel package - the dual TSOP-6 - which features a typical thermal resistance of 75 °C/W and a maximum of 90 °C/W. Power Dissipation for 175 °C Rated Part The typical RJA for the dual-channel 6-pin SC-70 with a copper leadframe is 224 °C/W steady-state, compared to 413 °C/W for the Alloy 42 version. All figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at varying ambient temperatures. Alloy 42 Leadframe ALLOY 42 LEADFRAME APPLICATION NOTE ROOM AMBIENT 25 °C PD T J(max.) - TA R JA T J(max.) - TA R JA PD T J(max.) - TA R JA PD 175 °C - 25 °C 224 °C/W PD 175 °C - 60 °C 224 °C/W PD 669 mW PD 513 mW Although they are intended for low-power applications, devices in the 6-pin SC-70 dual-channel configuration will handle power dissipation in excess of 0.5 W. TESTING To further aid the comparison of copper and Alloy 42 leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin SC-70 thermal performance on two different board sizes and pad patterns. The measured steady-state values of RJA for the dual 6-pin SC-70 with varying leadframes are as follows: LITTLE FOOT 6-PIN SC-70 ELEVATED AMBIENT 60 °C PD T J(max.) - TA R JA PD 175 °C - 25 °C 413 °C/W PD 175 °C - 60 °C 413 °C/W PD 363 mW PD 278 mW Revision: 15-Apr-13 PD ELEVATED AMBIENT 60 °C 1) Minimum recommended pad pattern on the EVB board (see fig. 3). 1-inch2 2) Industry standard PCB with maximum copper both sides. ALLOY 42 COPPER 518 °C/W 344 °C/W 413 °C/W 224 °C/W The results indicate that designers can reduce thermal resistance (JA) by 34 % simply by using the copper leadframe device as opposed to the Alloy 42 version. In this example, a 174 °C/W reduction was achieved without an increase in board area. If an increase in board size is feasible, a further 120 °C/W reduction can be obtained by utilizing a 1-inch2. PCB area. Document Number: 75130 2 For technical questions, contact: powermosfettechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note AN917 www.vishay.com Vishay Siliconix Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part Dual: Sx19xxEDH or Sx19xxEEH Compl.: Sx15xxEDH or Sx15xxEEH 500 500 400 400 Thermal Resistance (°C/W) Thermal Resistance (°C/W) The dual copper leadframe versions have the following suffix: 300 Alloy 42 200 Copper 100 300 Alloy 42 200 100 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 Time (s) APPLICATION NOTE Fig. 4 Dual SC70-6 Thermal Performance on EVB Revision: 15-Apr-13 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 Time (s) Fig. 5 Dual SC70-6 Comparison on 1-inch2 PCB Document Number: 75130 3 For technical questions, contact: powermosfettechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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