SQ2319ES
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Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
0.075
RDS(on) () at VGS = - 4.5 V
0.145
ID (A)
- 4.6
Configuration
Single
TO-236
(SOT-23)
G
S
1
3
S
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
- 40
D
G
2
Top View
D
SQ2319ES (8H)*
* Marking Code
P-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2319ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
IS
Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
- 4.6
- 2.6
- 3.7
IDM
- 18
IAS
- 12
EAS
7.2
PD
TC = 125 °C
UNIT
3
1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
166
RthJF
50
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountb
Junction-to-Foot (Drain)
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2111-Rev. C, 07-Nov-11
1
Document Number: 65735
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = - 250 μA
- 40
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = - 40 V
-
-
-1
-
-
- 50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 40 V, TJ = 125 °C
VGS = 0 V
VDS = - 40 V, TJ = 175 °C
-
-
- 150
On-State Drain Currenta
ID(on)
VGS = - 10 V
VDS- 5 V
- 10
-
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
VGS = - 10 V
ID = - 3 A
-
0.061
0.075
VGS = - 10 V
ID = - 3 A, TJ = 125 °C
-
-
0.116
VGS = - 10 V
ID = - 3 A, TJ = 175 °C
-
-
0.139
VGS = - 4.5 V
ID = - 2.4 A
gfs
VDS = - 5 V, ID = - 3 A
-
0.120
0.145
-
8
-
-
493
620
-
76
95
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
51
65
Total Gate Chargec
Qg
-
10.5
16
-
1.8
-
-
2.6
-
5
10
15
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 20 V, ID = - 3 A
f = 1 MHz
td(on)
tr
td(off)
VDD = - 20 V, RL = 6.7
ID - 3 A, VGEN = - 10 V, Rg = 1
tf
-
5
8
-
11
17
-
19
29
-
8
12
pF
nC
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 1.5 A, VGS = 0
-
-
- 18
A
-
- 0.8
- 1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2111-Rev. C, 07-Nov-11
2
Document Number: 65735
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
20
VGS = 10 V thru 6 V
16
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 5 V
12
8
4
TC = 25 °C
8
4
VGS = 4 V
TC = 125 °C
0
TC = - 55 °C
0
0
VDS - Drain-to-Source Voltage (V)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
4
6
8
0
10
2.0
15
1.6
12
gfs - Transconductance (S)
ID - Drain Current (A)
12
1.2
TC = 25 °C
0.8
0.4
10
TC = - 55 °C
TC = 25 °C
9
TC = 125 °C
6
3
TC = 125 °C
TC = - 55 °C
0
0.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0.0
10
1.6
3.2
4.8
6.4
8.0
ID - Drain Current (A)
Transfer Characteristics
Transconductance
1.0
800
600
0.6
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
700
0.8
VGS = 4.5 V
0.4
Ciss
500
400
300
200
Coss
0.2
VGS = 10 V
100
Crss
0.0
0
0
4
8
12
ID - Drain Current (A)
16
20
0
On-Resistance vs. Drain Current
S11-2111-Rev. C, 07-Nov-11
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
35
40
Capacitance
3
Document Number: 65735
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 3 A
VDS = 20 V
8
6
4
2
ID = 3 A
2.1
VGS = 10 V
1.7
1.3
VGS = 4.5 V
0.9
0.5
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
10
- 50 - 25
12
Gate Charge
150
175
On-Resistance vs. Junction Temperature
100
1.0
10
0.8
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.6
0.4
0.2
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
0.0
1.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
- 40
1.0
VGS(th) Variance (V)
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
0.7
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
- 42
- 44
- 46
- 48
- 50
- 50 - 25
175
TJ - Temperature (°C)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-2111-Rev. C, 07-Nov-11
4
150
175
Document Number: 65735
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
1s
10 s, DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2111-Rev. C, 07-Nov-11
5
Document Number: 65735
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65735.
S11-2111-Rev. C, 07-Nov-11
6
Document Number: 65735
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000
