SQ2337ES
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Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® Power MOSFET
• AEC-Q101 Qualified c
D
3
• 100 % Rg and UIS Tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
S
1
G
Top View
G
PRODUCT SUMMARY
VDS (V)
- 80
RDS(on) (Ω) at VGS = - 10 V
0.290
RDS(on) (Ω) at VGS = - 6 V
0.314
ID (A)
- 2.2
Configuration
D
P-Channel MOSFET
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
SQ2337ES
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
- 80
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
- 2.2
- 1.3
IS
- 3.7
IDM
-9
IAS
- 11
EAS
6
PD
UNIT
3
1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
166
RthJF
50
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-foot (drain)
PCB mount b
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR-4 material)
c. Parametric verification ongoing
S21-1074-Rev. C, 15-Nov-2021
Document Number: 66717
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0, ID = - 250 μA
- 80
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
-
- 2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = - 80 V
-
-
-1
-
-
- 50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = - 80 V, TJ = 125 °C
VGS = 0 V
VDS = - 80 V, TJ = 175 °C
-
-
- 150
On-state drain current a
ID(on)
VGS = - 10 V
VDS ≥ 5 V
-8
-
-
VGS = - 10 V
ID = - 1.2 A
-
0.241
0.290
VGS = - 6 V
ID = - 1.1 A
-
0.261
0.314
-
3.5
-
-
495
620
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VDS = - 15 V, ID = - 1.2 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
-
40
55
Reverse transfer capacitance
Crss
-
30
38
Total gate charge c
Qg
-
11.5
18
-
1.9
-
-
3.3
-
2.2
4.43
7
-
5
8
-
10
15
-
18
27
-
8
12
Gate-source charge
c
Gate-drain charge c
Gate resistance
Rise time c
Fall time c
VDS = - 40 V, ID = - 1.2 A
f = 1 MHz
td(on)
tr
c
VGS = - 10 V
VDS = - 40 V, f = 1 MHz
Qgd
Rg
Turn-on delay time c
Turn-off delay time
Qgs
VGS = 0 V
td(off)
VDD = - 40 V, RL = 41.6 Ω
ID ≅ - 0.96 A, VGEN = - 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics
pF
nC
Ω
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = - 0.8 A, VGS = 0
-
-
-9
A
-
- 0.8
- 1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-1074-Rev. C, 15-Nov-2021
Document Number: 66717
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
7
7
VGS = 10 V thru 5V
6
ID - Drain Current (A)
ID - Drain Current (A)
6
VGS = 4 V
4
3
1
4
TC = 25 °C
3
1
TC = 125 °C
TC = - 55 °C
0
0
0
1
2
3
4
0
5
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
5
gfs - Transconductance (S)
4
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
TC = 25 °C
3
TC = 125 °C
2
0.8
0.6
0.4
VGS = 4.5 V
0.2
1
VGS = 10 V
0.0
0
0.0
0.4
0.8
1.2
1.6
0
2.0
1
ID - Drain Current (A)
Transconductance
4
6
7
On-Resistance vs. Drain Current
10
800
ID = 1.2 A
VGS - Gate-to-Source Voltage (V)
700
600
C - Capacitance (pF)
3
ID - Drain Current (A)
Ciss
500
400
300
200
8
V DS = 40 V
6
4
2
Coss
100
Crss
0
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
S21-1074-Rev. C, 15-Nov-2021
70
80
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 66717
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
5.0
ID = 1.2 A
2.1
4.0
VGS = 10 V
RDS(on) - On-Resistance (Ω)
RDS(on) - On-Resistance (Normalized)
2.5
1.7
VGS = 6 V
1.3
3.0
2.0
0.9
1.0
0.5
0.0
TJ = 150 °C
TJ = 25 °C
- 50 - 25
0
25
50
75
100
125
150
0
175
2
TJ - Junction Temperature (°C)
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 85
1
VDS - Drain-to-Source Voltage (V)
10
IS - Source Current (A)
4
TJ = 150 °C
0.1
TJ = 25 °C
0.01
ID = 1 mA
- 90
- 95
- 100
- 105
- 110
0.001
0.0
0.2
0.4
0.6
0.8
1.0
- 50 - 25
1.2
0
VSD - Source-to-Drain Voltage (V)
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs. Junction Temperature
1.0
IDM Limited
ID - Drain Current (A)
ID = 250 μA
0.7
VGS(th) Variance (V)
10
0.4
ID = 5 mA
0.1
100 µs
Limited by RDS(on)*
1
1 ms
10 ms
0.1
100 ms
- 0.2
BVDSS Limited
TA = 25 °C
Single Pulse
- 0.5
- 50 - 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S21-1074-Rev. C, 15-Nov-2021
125
150
175
0.01
0.01
0.1
1
10
1s
10 s, DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 66717
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 50 °C/W
0.02
3. TJM - TTf = PDMZthFf (t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66717.
S21-1074-Rev. C, 15-Nov-2021
Document Number: 66717
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25
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Revision: 01-Jan-2022
1
Document Number: 91000