SQ2364EES-T1_GE3

SQ2364EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET D 3 • AEC-Q101 qualified • 100 % Rg and UIS tested • Typical ESD protection 800 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S 1 G Top View D Marking code: 9Jxxx G PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 1.5 V 0.245 ID (A) Configuration Package 2 N-Channel MOSFET Single S SOT-23 ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free SQ2364EES-T1 (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ±8 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID V 2 1.3 IS 2 IDM 8 IAS 5 EAS 1.25 PD UNIT 3 1 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) S22-0167-Rev. B, 14-Feb-2022 Document Number: 75975 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2364EES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 0.46 0.6 1 VDS = 0 V, VGS = ± 3 V - - ± 100 VDS = 0 V, VGS = ± 8 V - - ± 5.5 Gate-source leakage IGSS VGS = 0 V VDS = 60 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 4.5 V VDS ≥ 5 V 2 - - Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = 4.5 V ID = 2 A, TJ = 25 °C - 0.190 0.240 VGS = 4.5 V ID = 2 A, TJ = 125 °C - - 0.460 VGS = 4.5 V ID = 2 A, TJ = 175 °C - - 0.600 VGS = 1.5 V ID = 2 A - 0.195 0.245 - 8.8 - VDS = -15 V, ID = 1 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Total gate charge c - 263 330 - 28 35 Crss - 15 19 Qg - 2 2.5 - 0.3 - - 0.6 - 2.5 4.1 6.6 - 6 7.2 - 11 14 - 26 32 - 13 16 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 4.5 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 1.5 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 15 Ω ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 2 A, VGS = 0 - - 8 A - 0.8 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0167-Rev. B, 14-Feb-2022 Document Number: 75975 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2364EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10-01 10000 10 TJ = 25 °C 0.00050 100 0.00025 2nd line IGSS - Gate Current (A) 1000 0.00075 1st line 2nd line 2nd line IGSS - Gate Current (A) 0.00100 10000 -02 10-03 10-04 1000 10-05 1st line 2nd line 0.00125 TJ = 150 °C 10-06 TJ = 25 °C 10-07 10 100 -08 10-09 0.00000 10-10 10 0 2 4 6 8 10 10 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage Axis Title Axis Title 5 10000 10000 3.0 VGS = 4 V thru 1.5 V 2 100 VGS = 1 V 1000 1.8 1st line 2nd line 1000 3 2nd line ID - Drain Current (A) 2.4 1st line 2nd line 2nd line ID - Drain Current (A) 4 1.2 100 TC = 25 °C TC = 125 °C 0.6 1 VGS = 0.5 V TC = -55 °C 0 0.0 10 0 1 2 3 4 10 0.0 5 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 15 3.0 0.45 10000 TC = 25 °C 1000 9 TC = 125 °C 6 100 3 0 10 0.0 0.5 1.0 1.5 ID - Drain Current (A) 2nd line Transconductance S22-0167-Rev. B, 14-Feb-2022 2.0 2nd line RDS(on) - On-Resistance (Ω) 12 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 0.36 0.27 VGS = 1.5 V 0.18 0.09 0.00 0.0 0.8 1.6 2.4 3.2 4.0 ID - Drain Current (A) 2nd line On-Resistance vs. Drain Current Document Number: 75975 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2364EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 4.5 Ciss 1000 240 1st line 2nd line 160 100 Crss 80 Coss 0 12 24 36 48 ID = 1.5 A VDS = 30 V 3.6 1000 2.7 1.8 100 0.9 0 10 0 10000 60 10 0 1 2 Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge Axis Title 5 Axis Title 10000 10000 1 VGS = 1.5 V 1.2 100 0.8 0.4 0 25 50 TJ = 150 °C 0.1 100 TJ = 25 °C 0.01 10 -50 -25 1000 1st line 2nd line 1000 1.6 2nd line IS - Source Current (A) ID = 2 A 2.0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 4 VDS - Drain-to-Source Voltage (V) 2nd line 2.4 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Axis Title Axis Title 0.4 10000 0.70 10000 0.2 1000 0.42 TJ = 125 °C 0.28 100 0.14 0.00 10 0.9 1.8 2.7 1000 0.0 ID = 5 mA -0.2 100 ID = 250 μA -0.4 TJ = 25 °C 0 2nd line VGS(th) Variance (V) 0.56 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 3.6 4.5 -0.6 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-Source Voltage Threshold Voltage S22-0167-Rev. B, 14-Feb-2022 1st line 2nd line 2nd line C - Capacitance (pF) 320 2nd line VGS - Gate-to-Source Voltage (V) 10000 1st line 2nd line 400 Document Number: 75975 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2364EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title ID = 1 mA IDM limited 1st line 2 d li 80 75 2nd line ID - Drain Current (A) 85 70 10 Limited by RDS(on) (1) 1000 1 1 ms 100 0.1 10 ms BVDSS limited 100 ms, 1 s, 10 s, DC TC = 25 °C Single pulse 0.01 0.01 65 -50 -25 0 25 50 75 100 125 150 175 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 10000 100 90 TJ - Junction Temperature (°C) 2nd line (1) 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Drain-Source Breakdown vs. Junction Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0167-Rev. B, 14-Feb-2022 Document Number: 75975 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2364EES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75975. S22-0167-Rev. B, 14-Feb-2022 Document Number: 75975 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000