SQ3585EV
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Vishay Siliconix
Automotive N- and P-Channel 20 V (D-S) MOSFET
FEATURES
TSOP-6 Dual
D1
6
• TrenchFET® power MOSFET
D2
4
S1
5
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
G1
Top View
3
G2
2
S2
D1
S2
G2
PRODUCT SUMMARY
N-CHANNEL
VDS (V)
20
-20
RDS(on) () at VGS = 4.5 V
0.077
0.166
RDS(on) () at VGS = ± 2.5 V
0.120
0.318
ID (A)
3.57
-2.5
Configuration
Package
G1
P-CHANNEL
Dual
S1
D2
N-Channel MOSFET
P-Channel MOSFET
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDS
20
-20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C) a
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
ID
TC = 25 °C
TC = 125 °C
Unclamped Inductive Surge UIS
IS
PD
IAV
Operating Junction and Storage Temperature Range
3.57
-2.5
2
-1.45
12
-10
2.1
-2.1
1.67
1.67
0.56
0.56
3.3
TJ, Tstg
3
-55 to +175
UNIT
V
A
W
A
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
MAX.
MAX.
Maximum Junction-to-Ambient a
Steady State
RthJA
150
150
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
90
90
UNIT
°C/W
Note
a. Surface mounted on 1" x 1" FR4 board.
S16-1516-Rev. A, 01-Aug-16
Document Number: 75126
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
SPECIFICATIONS (TJ = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
VGS(th)
ID(on)
RDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
N-Ch
0.6
-
1.5
P-Ch
-0.6
-
-1.5
N-Ch
-
-
± 100
P-Ch
-
-
± 100
VDS = 0 V, VGS = ± 12 V
IGSS
IDSS
VDS = VGS, ID = 250 μA
VDS = VGS, ID = -250 μA
VGS = 0 V
VDS = 30 V
N-Ch
-
-
1
VGS = 0 V
VDS = -30 V
P-Ch
-
-
-1
VGS = 0 V
VDS = 30 V, TJ = 55 °C
N-Ch
-
-
5
VGS = 0 V
VDS = -30 V, TJ = 55 °C
P-Ch
-
-
-5
VGS = 4.5 V
VDS 5 V
N-Ch
5
-
-
VGS = -4.5 V
VDS -5 V
P-Ch
-5
-
-
VGS = 4.5 V
ID = 1 A
N-Ch
-
0.049
0.077
VGS = -4.5 V
ID = -1 A
P-Ch
-
0.140
0.166
VGS = 2.5 V
ID = 1 A
N-Ch
-
0.066
0.120
VGS = -2.5 V
ID = -1 A
P-Ch
-
0.265
0.318
VDS = 5 V, ID = 1 A
N-Ch
-
10
-
VDS = -5 V, ID = -1 A
P-Ch
-
3
-
IS = 1.05 A, VGS = 0 V
N-Ch
-
0.80
1.10
IS = -1.05 A, VGS = 0 V
P-Ch
-
-0.83
-1.10
V
nA
μA
A
S
V
Dynamic b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 4.5 V
VDS = 10 V, ID = 1 A
N-Ch
-
1.8
2.5
VGS = -4.5 V
VDS = -10 V, ID = -1 A
P-Ch
-
2.4
3.5
VGS = 4.5 V
VDS = 10 V, ID = 1 A
N-Ch
-
0.3
-
VGS = -4.5 V
VDS = -10 V, ID = -1 A
P-Ch
-
0.4
-
VGS = 4.5 V
VDS = 10 V, ID = 1 A
N-Ch
-
0.4
-
VGS = -4.5 V
VDS = -10 V, ID = -1 A
f = 1 MHz
Rg
td(on)
tr
td(off)
N-Channel
VDD = 10 V, RL = 10
ID 1 A, VGEN = 10 V, Rg = 1 k
P-Channel
VDD = -10 V, RL = 10
ID -1 A, VGEN = -10 V, Rg = 1 k
tf
P-Ch
-
0.7
-
N-Ch
3.4
-
9.1
P-Ch
3.4
-
9.1
N-Ch
-
9
12
P-Ch
-
7
11
N-Ch
-
15
19
P-Ch
-
16
22
N-Ch
-
22
28
P-Ch
-
29
40
N-Ch
-
8
12
P-Ch
-
14
24
nC
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1516-Rev. A, 01-Aug-16
Document Number: 75126
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
10
10
10000
10000
VGS = 6 V thru 2.5 V
4
100
2
1000
6
TC = 25 °C
4
100
2
VGS = 1.5 V
TC = 125 °C
0
1
2
3
4
5
10
0
1
4
Output Characteristics
Transfer Characteristics
Axis Title
1000
9
6
TC = 125 °C
100
3
0
0.4
0.6
0.8
0.12
1000
0.09
VGS = 2.5 V
0.06
100
0.03
VGS = 4.5 V
0.00
10
0.2
10000
1.0
10
0.0
1.6
3.2
4.8
6.4
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
5
Ciss
1000
1st line
2nd line
150
100
100
Coss
50
Crss
0
10
12
16
20
10000
ID = 1 A
VDS = 10 V
4
1000
3
1st line
2nd line
200
2nd line
VGS - Gate-to-Source Voltage (V)
10000
8
2
100
1
0
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S16-1516-Rev. A, 01-Aug-16
8.0
Axis Title
250
4
1st line
2nd line
TC = 25 °C
2nd line
RDS(on) - On-Resistance (Ω)
TC = -55 °C
12
5
0.15
10000
1st line
2nd line
2nd line
gfs - Transconductance (S)
3
VGS - Gate-to-Source Voltage (V)
2nd line
Axis Title
0
2
VDS - Drain-to-Source Voltage (V)
2nd line
15
0.0
TC = -55 °C
0
10
0
2nd line
C - Capacitance (pF)
1st line
2nd line
1000
6
2nd line
ID - Drain Current (A)
8
VGS = 2 V
1st line
2nd line
2nd line
ID - Drain Current (A)
8
5
Document Number: 75126
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 1 A
10
1000
1.4
1.1
100
VGS = 4.5 V
0.8
0.5
0
25
50
0.1
100
0.01
0.001
10
-50 -25
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Axis Title
Axis Title
0.5
0.5
10000
10000
0.2
0.2
TJ = 150 °C
100
0.1
ID = 5 mA
1000
-0.1
1st line
2nd line
1000
0.3
2nd line
VGS(th) Variance (V)
0.4
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1000
TJ = 25 °C
TJ = 150 °C
1
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
-0.4
100
ID = 250 μA
-0.7
TJ = 25 °C
0.0
-1.0
10
0
1
2
3
4
5
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
10
10000
IDM Limited
ID = 10 mA
Limited by RDS(on)*
1000
26
24
100
ID - Drain Current (A)
28
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
30
1
1 ms
10 ms
ID Limited
0.1
100 ms
1 s, 10 s, DC
22
BVDSS Limited
TC = 25 °C
Single Pulse
20
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S16-1516-Rev. A, 01-Aug-16
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 75126
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
100
10
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
S16-1516-Rev. A, 01-Aug-16
Document Number: 75126
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
10
10
10000
8
1000
1st line
2nd line
6
VGS = 3 V
4
100
VGS = 2.5 V
2
1
2
3
100
TC = 125 °C
TC = -55 °C
VGS = 1.5 V
0
10
4
10
0
5
1
Output Characteristics
Transfer Characteristics
Axis Title
1000
2
TC = 125 °C
100
1
2nd line
RDS(on) - On-Resistance (Ω)
TC = -55 °C
3
1st line
2nd line
2nd line
gfs - Transconductance (S)
4
TC = 25 °C
0.4
0.6
0.8
10000
0.40
1000
0.30
VGS = 2.5 V
0.20
100
VGS = 4.5 V
0.10
0.00
10
0.2
10
0
1.0
1.6
3.2
4.8
6.4
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
5
210
1st line
2nd line
1000
Ciss
140
100
Coss
70
Crss
0
10
12
16
20
10000
4
ID = 1 A
VDS = 10 V
2
100
1
0
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S16-1516-Rev. A, 01-Aug-16
1000
3
1st line
2nd line
280
2nd line
VGS - Gate-to-Source Voltage (V)
10000
8
8
Axis Title
350
4
5
0.50
10000
0
2nd line
C - Capacitance (pF)
4
VGS - Gate-to-Source Voltage (V)
2nd line
Axis Title
0
3
VDS - Drain-to-Source Voltage (V)
2nd line
5
0.0
2
1st line
2nd line
0
TC = 25 °C
4
2
VGS = 2.0 V
0
1000
6
1st line
2nd line
VGS = 10 V thru 3.5 V
2nd line
ID - Drain Current (A)
8
2nd line
ID - Drain Current (A)
10000
5
Document Number: 75126
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 1 A
10
1000
1.4
1.1
100
VGS = 4.5 V
0.8
0.5
0
25
50
1000
0.1
100
0.01
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Axis Title
Axis Title
1.0
0.5
10000
10000
0.3
0.6
0.4
TJ = 150 °C
0.2
100
0.0
2
-0.1
100
ID = 250 μA
-0.5
10
1
1000
0.1
-0.3
TJ = 25 °C
0
ID = 5 mA
1st line
2nd line
1000
2nd line
VGS(th) Variance (V)
0.8
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 25 °C
0.001
10
-50 -25
TJ = 150 °C
1
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
3
4
5
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
10000
IDM Limited
10
ID = 10 mA
-20
-21
-22
100
ID - Drain Current (A)
100 μs
1000
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
-19
Limited by RDS(on)*
1
1 ms
10 ms
ID Limited
0.1
100 ms, 1 s, 10 s, DC
-23
BVDSS Limited
-24
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S16-1516-Rev. A, 01-Aug-16
0.01
0.01
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 75126
7
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3585EV
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Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
100
10
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75126.
S16-1516-Rev. A, 01-Aug-16
Document Number: 75126
8
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
INCHES
7 Nom
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
0.064
(1.626)
0.028
(0.699)
(3.023)
0.119
(2.510)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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26
Document Number: 72610
Revision: 21-Jan-08
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
