SQ3987EV
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Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
TSOP-6 Dual
D1
6
S1
5
D2
4
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
1
G1
Top View
2
S2
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
G2
S2
S1
Marking code: 8X
PRODUCT SUMMARY
VDS (V)
-30
RDS(on) () at VGS = -10 V
-0.110
RDS(on) () at VGS = -4.5 V
-0.185
ID (A)
-2.75
Configuration
Package
G2
G1
Dual
D1
TSOP-6
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-30
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C) a
TC = 25 °C
TC = 125 °C
Pulsed drain current
IDM
Continuous source current (diode conduction) a
Maximum power dissipation a
ID
IS
TC = 25 °C
TC = 125 °C
Unclamped inductive surge UIS
Operating junction and storage temperature range
PD
UNIT
V
-3
-1.74
-11
A
-2.1
1.67
0.56
W
IAV
-5
A
TJ, Tstg
-55 to +175
°C
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Maximum junction-to-ambient a
Steady state
RthJA
150
Maximum junction-to-foot (drain)
Steady state
RthJF
90
°C/W
Note
a. Surface mounted on 1" x 1" FR4 board
S19-0398-Rev. B, 06-May-2019
Document Number: 75315
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3987EV
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Vishay Siliconix
SPECIFICATIONS (TJ = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-
-2.5
V
Gate-body leakage
Gate threshold voltage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain
current
IDSS
On-state drain current a
ID(on)
Drain-source on-state
resistance a
RDS(on)
Forward transconductance a
Diode forward voltage
a
VGS = 0 V
VDS = -30 V
-
-
-1
VGS = 0 V
VDS = -30 V, TJ = 175 °C
-
-
-50
VGS = -10 V
VDS -5 V
-4
-
-
A
VGS = -10 V
ID = -1.5 A
-
0.085
0.133
VGS = -4.5 V
ID = -2 A
-
0.135
0.185
μA
gfs
VDS = -5 V, ID = -1 A
-
4.2
-
S
VSD
IS = -0.5 A, VGS = 0 V
-
-0.83
-1.10
V
-
456
570
-
85
106
-
59
74
-
9.7
12.2
-
1.3
-
-
2
-
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VGS = 0 V
VGS = -10 V
Rg
VDS = -15 V
VDS = -15 V, ID = -3 A
f = 1 MHz
td(on)
VDD = -10 V, RL = 10
ID -1 A, VGEN = -10 V, Rg = 1
tr
td(off)
tf
9
-
24
-
6.6
8.3
-
2.4
3
-
18.4
23
-
2.2
2.8
pF
nC
ns
Source-Drain Diode Ratings and Characteristic b
Pulsed current
ISM
Forward voltage
VSD
IF = 0.5 A, VGS = 0 V
-
-
-11
A
-
-0.83
-1.1
V
Reverse recovery fall time
ta
-
9.1
-
ns
Reverse recovery rise time
tb
-
4.8
-
ns
Body diode reverse recovery
time
trr
-
14
28
ns
Body diode reverse recovery
charge
Qrr
-
9
18
μC
IRM(REC)
-
-1.4
-
A
Body diode peak reverse
recovery current
VDD = -24 V, IFM = -1.5 A, di/dt = 100 A/μs,
R = 160 , L = 1 mH, pulse W = 2 μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0398-Rev. B, 06-May-2019
Document Number: 75315
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3987EV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
VGS = 10 V thru 5 V
1000
1st line
2nd line
9
VGS = 4 V
6
100
3
0
2nd line
gfs - Transconductance (S)
12
2nd line
ID - Drain Current (A)
10
10000
10
0
1
2
3
4
10000
8
TC = 25 °C
TC = -55 °C
4
TC = 125 °C
100
2
0
5
10
0
1
2
3
VDS - Drain-to-Source Voltage (V)
2nd line
ID - Drain Current (A)
2nd line
Output Characteristics
Transconductance
4
5
Axis Title
Axis Title
15
600
10000
10000
TC = -55 °C
Ciss
480
1000
1st line
2nd line
TC = 25 °C
6
100
1000
360
1st line
2nd line
TC = 125 °C
9
2nd line
C - Capacitance (pF)
12
2nd line
ID - Drain Current (A)
1000
6
1st line
2nd line
15
240
100
Coss
120
3
Crss
0
0
10
0
2
4
6
8
10
0
10
6
24
VDS - Drain-to-Source Voltage (V)
2nd line
Transfer Characteristics
Capacitance
Axis Title
VGS = 4.5 V
100
0.1
VGS = 10 V
0
10
2
4
6
8
10
10000
ID = 1.5 A
VDS = 15 V
8
1000
6
1st line
2nd line
1000
0.3
2nd line
VGS - Gate-to-Source Voltage (V)
10
0.4
0.2
4
100
2
0
10
0
3
6
9
12
ID - Drain Current (A)
2nd line
Qg - Total Gate Charge (nC)
2nd line
On-Resistance vs. Drain Current
Gate Charge
S19-0398-Rev. B, 06-May-2019
30
Axis Title
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
18
VGS - Gate-to-Source Voltage (V)
2nd line
0.5
0
12
15
Document Number: 75315
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3987EV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 1.5 A
10
1000
1.4
1.1
VGS = 4.5 V
100
0.8
0.5
0
25
50
100
0.01
10
0
75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Axis Title
Axis Title
-30
1.0
10000
10000
-36
100
-38
0.8
1000
0.6
1st line
2nd line
1000
-34
2nd line
RDS(on) - On-Resistance (Ω)
ID = 1 mA
-32
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
1000
0.1
0.001
10
-50 -25
TJ = 25 °C
TJ = 150 °C
1
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
0.4
100
TJ = 150 °C
0.2
TJ = 25 °C
-40
0.0
10
-50 -25
0
25
50
10
75 100 125 150 175
0
2
4
6
8
10
TJ - Junction Temperature (°C)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.7
10000
IDM limited
ID = 250 μA
1000
0.3
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.5
ID = 5 mA
0.1
100
ID - Drain Current (A)
10
100 μs
Limited by RDS(on)*
1
1 ms
10 ms
0.1
-0.1
BVDSS limited
-0.3
10
-50 -25
0
25
50
75 100 125 150 175
0.01
0.01
100 ms, 1 s,
10 s, DC
TC = 25 °C
Single pulse
0.1
1
10
100
TJ - Temperature (°C)
2nd line
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Threshold Voltage
Safe Operating Area, Junction-to-Case
S19-0398-Rev. B, 06-May-2019
Document Number: 75315
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3987EV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty cycle, D =
0.02
t1
t2
2. Per unit base = R thJA = 150 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface mounted
Single pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75315.
S19-0398-Rev. B, 06-May-2019
Document Number: 75315
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
INCHES
7 Nom
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
0.064
(1.626)
0.028
(0.699)
(3.023)
0.119
(2.510)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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26
Document Number: 72610
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
