SQ3989EV
www.vishay.com
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
TSOP-6 Dual
D1
6
S1
5
D2
4
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
1
G1
Top View
2
S2
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
G2
S1
S2
Marking code: 9B
G1
G2
PRODUCT SUMMARY
VDS (V)
-30
RDS(on) (Ω) at VGS = -10 V
-0.155
RDS(on) (Ω) at VGS = -4.5 V
-0.300
ID (A)
-2.32
Configuration
Dual
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ORDERING INFORMATION
Package
TSOP-6
Lead (Pb)-free and halogen-free
SQ3989EV
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-30
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C) a
TC = 25 °C
TC = 125 °C
Pulsed drain current
IDM
Continuous source current (diode conduction) a
Maximum power dissipation a
ID
IS
TC = 25 °C
TC = 125 °C
Unclamped inductive surge UIS
Operating junction and storage temperature range
PD
UNIT
V
-2.5
-1.5
-10.2
A
-2.1
1.67
0.56
W
IAV
-7
A
TJ, Tstg
-55 to +175
°C
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Maximum junction-to-ambient a
Steady state
RthJA
150
Maximum junction-to-foot (drain)
Steady state
RthJF
90
°C/W
Note
a. Surface mounted on 1" x 1" FR4 board
S22-0224-Rev. E, 07-Mar-2022
Document Number: 75059
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3989EV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VGS(th)
VDS = VGS, ID = -250 μA
-0.6
-
-1.5
V
Gate-body leakage
Gate threshold voltage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain
current
IDSS
On-state drain current a
ID(on)
Drain-source on-state
resistance a
RDS(on)
Forward
transconductance a
Diode forward voltage
a
VGS = 0 V
VDS = -30 V
-
-
-1
VGS = 0 V
VDS = -30 V, TJ = 55 °C
-
-
-5
VGS = -10 V
VDS ≤ -5 V
-4
-
-
VGS = -10 V
ID = -0.4 A
-
0.140
0.155
VGS = -4.5 V
ID = -0.2 A
-
0.265
0.300
μA
A
Ω
gfs
VDS = -5 V, ID = -1 A
-
2.2
-
S
VSD
IS = -0.5 A, VGS = 0 V
-
-0.83
-1.1
V
Dynamic b
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
8.6
11.1
-
1.2
-
-
3
-
f = 1 MHz
2.5
-
7.2
-
5.7
8
VDD = -10 V, RL = 10 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
-
3
4
-
13.8
18
-
2
3
VGS = -10 V
VDS = -15 V, ID = -3 A
td(on)
tr
td(off)
tf
nC
Ω
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0224-Rev. E, 07-Mar-2022
Document Number: 75059
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3989EV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
20
20
10000
10000
TC = -55 °C
VGS = 6 V
8
100
VGS = 5 V
4
TC = 125 °C
8
100
4
VGS = 4 V
VGS = 3 V
0
0
10
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
10
0
2
4
Output Characteristics
Transfer Characteristics
Axis Title
TC = 25 °C
100
0.4
4
TC = -55 °C
3
1000
TC = 25 °C
2
TC = 125 °C
100
1
TC = -55 °C
0.0
0
10
1
10000
1st line
2nd line
2nd line
gfs - Transconductance (S)
1st line
2nd line
2
3
4
5
10
0.0
0.4
0.8
1.2
1.6
VGS - Gate-to-Source Voltage (V)
2nd line
ID - Drain Current (A)
2nd line
Transfer Characteristics
Transconductance
Axis Title
2.0
Axis Title
0.5
10000
10000
600
VGS = 4.5 V
1000
1st line
2nd line
0.3
0.2
VGS = 10 V
100
0.1
0.0
10
0
3
6
9
12
15
2nd line
C - Capacitance (pF)
0.4
450
1000
Ciss
1st line
2nd line
2nd line
ID - Drain Current (A)
1000
1.2
TC = 125 °C
10
5
10000
1.6
2nd line
RDS(on) - On-Resistance (Ω)
8
VGS - Gate-to-Source Voltage (V)
2nd line
Axis Title
0
6
VDS - Drain-to-Source Voltage (V)
2nd line
2.0
0.8
1000
TC = 25 °C
12
1st line
2nd line
1000
VGS = 10 V thru 7 V
12
2nd line
ID - Drain Current (A)
16
1st line
2nd line
2nd line
ID - Drain Current (A)
16
300
Crss
100
150
Coss
0
10
0
6
12
18
24
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
S22-0224-Rev. E, 07-Mar-2022
30
Document Number: 75059
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3989EV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
Axis Title
Axis Title
1.0
10000
ID = -3 A
VDS = -15 V
10000
0.7
6
4
100
ID = 5 mA
0.1
100
ID = 250 μA
-0.2
2
0
-0.5
10
0
2
4
6
8
10
-50 -25
10
0
25
50
TJ - Temperature (°C)
2nd line
Gate Charge
Threshold Voltage
Axis Title
Axis Title
100
10000
10000
ID = 4 A
10
1000
1.4
1.1
VGS = 4.5 V
100
0.8
0.5
0
25
50
0.1
100
0.01
0.001
10
-50 -25
1000
TJ = 25 °C
TJ = 150 °C
1
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
75 100 125 150 175
Qg - Total Gate Charge (nC)
2nd line
2.0
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Axis Title
Axis Title
-32
1.0
10000
10000
-38
100
-40
-42
10
-50 -25
0
25
50
75 100 125 150 175
0.8
1000
0.6
1st line
2nd line
1000
-36
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 mA
-34
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
1000
0.4
1st line
2nd line
1000
2nd line
VGS(th) Variance (V)
8
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
10
0.4
100
TJ = 150 °C
0.2
TJ = 25 °C
0.0
10
0
2
4
6
8
10
TJ - Junction Temperature (°C)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
S22-0224-Rev. E, 07-Mar-2022
Document Number: 75059
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3989EV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 μs
1
1 ms
ID Limited
10 ms
0.1
BVDSS Limited
0.01
0.01
100 ms, 1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
t2
1. Duty cycle, D =
0.05
0.02
t1
t2
2. Per unit base = R thJA = 150 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface mounted
Single pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75059.
S22-0224-Rev. E, 07-Mar-2022
Document Number: 75059
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
INCHES
7 Nom
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1
PAD Pattern
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Vishay Siliconix
Recommended Land Pattern For TSOP-5L / TSOP-6L
5
1
2
4
6
5
4
3
1
2
3
TSOP 5L
TSOP 6L
0.036
[0.922]
0.136
[3.444]
0.064
[1.626]
0.095
[2.408]
0.037
[0.950]
0.020
[0.508]
0.017
[0.442]
Note
• All dimensions are in inches (millimeter)
ECN: C22-0860-Rev. B, 24-Oct-2022
DWG: 3010
Revision: 24-Oct-2022
Document Number: 72610
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
