SQ4005EY-T1_GE3

SQ4005EY www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET SO-8 Single D 8 D 7 D 6 D 5 • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S 4 G S Marking Code: Q4005 G PRODUCT SUMMARY VDS (V) -12 RDS(on) (Ω) at VGS = -4.5 V 0.016 RDS(on) (Ω) at VGS = -2.5 V 0.022 ID (A) Configuration P-Channel MOSFET D -15 Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4005EY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -12 Gate-source voltage VGS ±8 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -15 IS -5.4 -60 IAS -20 EAS 20 TJ, Tstg Soldering recommendations (peak temperature) V -8.7 IDM PD UNIT 6 2 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB Mount c SYMBOL LIMIT RthJA 92 RthJF 25 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. Parametric verification ongoing S21-0375-Rev. B, 23-Apr-2021 Document Number: 64454 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4005EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = -250 μA -12 - - VGS(th) VDS = VGS, ID = -250 μA -0.45 -0.6 -1 VDS = 0 V, VGS = ± 8 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -12 V - - -1 VGS = 0 V VDS = -12 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -12 V, TJ = 175 °C - - -150 VGS = -4.5 V VDS ≤ -5 V -20 - - VGS = -4.5 V ID = -13.5 A - 0.013 0.016 VGS = -4.5 V ID = -13.5 A - - 0.020 VGS = -4.5 V ID = -13.5 A - - 0.022 VGS = -2.5 V ID = -12 A VDS = -6 V, ID = -12 A - 0.018 0.022 - 34 - V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = -6 V, f = 1 MHz td(off) 2433 3600 922 1380 - 752 1120 - 29 38 - 4.2 - - 8.4 - f = 1 MHz 1.3 2.7 4 - 19 26 VDD = -6 V, RL = 0.6 Ω ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω - 33 44 - 73 97 - 30 40 VGS = -4.5 V VDS = -6 V, ID = -10 A td(on) tr - tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = -10 A, VGS = 0 V - - -60 A - -0.8 -1.1 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. B, 23-Apr-2021 Document Number: 64454 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4005EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 5 V thru 2 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 VGS = 1.5 V 12 18 TC = 25 °C 12 6 T = 125 °C C 6 TC = - 55 °C VGS = 1 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 5 50 4 40 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 3 TC = 25 °C 2 1 TC = 25 °C 30 TC = 125 °C 20 10 TC = 125 °C TC = - 55 °C 0 0 0 1.5 1 2.5 2 VGS - Gate-to-Source Voltage (V) 0 3 0.04 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 5000 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 0.01 9 12 15 3 6 9 VDS - Drain-to-Source Voltage (V) 12 Transconductance 0.05 0.02 6 ID - Drain Current (A) Transfer Characteristics 0.03 3 3000 Ciss 2000 Coss 1000 Crss 0 0.00 0 6 12 18 ID - Drain Current (A) 24 On-Resistance vs. Drain Current S21-0375-Rev. B, 23-Apr-2021 30 0 Capacitance Document Number: 64454 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4005EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.5 5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A 4 3 2 1 10 20 VGS = 2.5 V 1.1 0.9 VGS = 4.5 V 0.7 0.5 - 50 - 25 0 0 ID = 13 A 1.3 30 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 0.05 100 TJ = 150 °C 0.04 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) 25 TJ - Junction Temperature (°C) Gate Charge 1 TJ = 25 °C 0.1 0.01 0.001 0.03 TJ = 150 °C 0.02 TJ = 25 °C 0.01 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 2 3 4 5 On-Resistance vs. Gate-to-Source Voltage - 13 0.5 VDS - Drain-to-Source Voltage (V) ID = 600 μA 0.3 0.1 ID = 2mA - 0.1 - 0.3 - 0.5 - 50 - 25 1 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage VGS(th) Variance (V) 0 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0375-Rev. B, 23-Apr-2021 125 150 175 - 13 ID = 1 mA - 14 - 14 - 15 - 15 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Breakdown Voltage vs. Junction Temperature Document Number: 64454 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4005EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 ID - Drain Current (A) 10 100 µs IDM Limited 1 ms 1 0.1 0.01 0.01 10 ms Limited by RDS(on)a TC = 25 °C Single Pulse 100 ms 1 s, 10 s, DC BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. B, 23-Apr-2021 Document Number: 64454 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4005EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 84 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64454. S21-0375-Rev. B, 23-Apr-2021 Document Number: 64454 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000