SQ4080EY
www.vishay.com
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
SO-8 Single
D
8
D
7
D
6
• TrenchFET® power MOSFET
D
5
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
1
S
2
S
3
S
4
G
D
PRODUCT SUMMARY
G
VDS (V)
150
RDS(on) (Ω) at VGS = 10 V
0.085
ID (A)
19
Configuration
Single
Package
SO-8
S
N-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
SQ4080EY
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
150
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
10
6.5
IDM
72
IAS
20
PD
V
18
IS
EAS
UNIT
20
7.1
2.4
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
85
RthJF
25
THERMAL RESISTANCE RATINGS
PARAMETER
Junction to ambient
Junction to case (drain)
PCB mount b
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
S22-0060-Rev. B, 24-Jan-2022
Document Number: 71158
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
150
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
4
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 150 V
-
-
1
VGS = 0 V
VDS = 150 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 150 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 10 A
-
0.070
0.085
VGS = 10 V
ID = 10 A, TC = 125 °C
-
-
0.167
VGS = 10 V
ID = 10 A, TC = 175 °C
-
-
0.220
-
51
-
-
1100
1590
-
75
130
VDS = 15 V, ID = 10 A
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
33
55
Total Gate Charge c
Qg
-
25
33
-
5.2
-
-
8.7
-
Gate-Source
Charge c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Qgs
VGS = 0 V
VDS = 75 V, f = 1 MHz
VGS = 10 V
VDS = 75 V, ID = 5 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tf
0.2
0.4
1
-
11.4
15
-
3.2
4.5
-
19.1
25
-
2.5
3.2
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 3.5 A, VGS = 0
-
-
72
A
-
0.75
1.1
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0060-Rev. B, 24-Jan-2022
Document Number: 71158
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
60
50
10000
10000
VGS = 10 V thru 7 V
40
24
100
12
1000
30
1st line
2nd line
VGS = 6 V
2nd line
ID - Drain Current (A)
1000
36
1st line
2nd line
20
TC = 25 °C
100
10
TC = 125 °C
0
0
10
0
5
10
15
20
10
0
25
2
4
8
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
10
Axis Title
Axis Title
2000
10000
10000
1600
1000
1st line
2nd line
0.9
0.6
TC = 25 °C
100
2nd line
C - Capacitance (pF)
1.2
2nd line
ID - Drain Current (A)
6
VDS - Drain-to-Source Voltage (V)
2nd line
1.5
1000
Ciss
1200
800
100
Crss
400
0.3
TC = 125 °C
Coss
TC = -55 °C
0.0
0
10
0
2
4
6
8
10
10
0
20
40
60
80
VGS - Gate-to-Source Voltage (V)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
Transfer Characteristics
Capacitance
0.5
TC = -55 °C
1000
1st line
2nd line
30
20
100
TC = 125 °C
10
10000
0.4
1000
0.3
1st line
2nd line
40
2nd line
RDS(on) - On-Resistance (Ω)
10000
TC = 25 °C
100
Axis Title
Axis Title
50
2nd line
gfs - Transconductance (S)
TC = -55 °C
1st line
2nd line
2nd line
ID - Drain Current (A)
48
0.2
100
VGS = 4.5 V
0.1
VGS = 10 V
0
10
0
4
8
12
16
20
0.0
10
0
12
24
36
48
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
S22-0060-Rev. B, 24-Jan-2022
60
Document Number: 71158
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
ID = 5 A
VDS = 75 V
4
100
2
0
12
18
24
0.1
100
0.01
0.001
10
6
30
10
0
0.2
0.4
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
2nd line
Gate Charge
Source Drain Diode Forward Voltage
Axis Title
Axis Title
1.0
10000
10000
ID = 5 A
0.4
1000
2.0
1.5
100
VGS = 6 V
1.0
ID = 5 mA
1000
-0.2
1st line
2nd line
VGS = 10 V
2nd line
VGS(th) Variance (V)
2.5
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
0.6
Qg - Total Gate Charge (nC)
2nd line
3.0
-0.8
100
ID = 250 μA
-1.4
0.5
-2.0
10
-50 -25
0
25
50
75 100 125 150 175
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
200
0.8
1000
1st line
2nd line
0.6
0.4
100
TJ = 150 °C
0.2
TJ = 25 °C
0.0
10
0
2
4
6
8
10
2nd line
VDS - Drain-to-Source Voltage (V)
10000
10000
ID = 1 mA
190
1000
180
1st line
2nd line
1.0
2nd line
RDS(on) - On-Resistance (Ω)
1000
TJ = 25 °C
TJ = 150 °C
1
1st line
2nd line
1000
6
0
10000
10
2nd line
IS - Source Current (A)
8
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
10
170
100
160
150
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
S22-0060-Rev. B, 24-Jan-2022
Document Number: 71158
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
1 ms
10
10 ms
100 ms
1
0.1
0.01
0.01
Limited by RDS(on)*
TC = 25 °C
Single Pulse
1 s, 10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71158.
S22-0060-Rev. B, 24-Jan-2022
Document Number: 71158
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
