SQ4153EY-T1_GE3

SQ4153EY www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET FEATURES SO-8 Single D 8 D 7 D 6 • TrenchFET® power MOSFET D 5 • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 4 G 3 S S PRODUCT SUMMARY G VDS (V) -12 RDS(on) (Ω) at VGS = -4.5 V 0.00832 RDS(on) (Ω) at VGS = -2.5 V 0.01000 RDS(on) (Ω) at VGS = -1.8 V 0.01430 ID (A) Configuration D -25 P-Channel MOSFET Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4153EY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -12 Gate-source voltage VGS ±8 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -14 -6.5 IDM -100 IAS -19 PD V -25 IS EAS UNIT 18 7.1 2.3 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 21 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB Mount c °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) S21-0375-Rev. C, 23-Apr-2021 Document Number: 66897 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4153EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = -250 μA -12 - - VGS(th) VDS = VGS, ID = -250 μA -0.4 -0.6 -0.9 VDS = 0 V, VGS = ± 8 V - - ± 100 - - -1 UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage IGSS Zero gate voltage drain current On-state drain current a Drain-source on-state Forward resistance a transconductance a IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = -12 V VGS = 0 V VDS = -12 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -12 V, TJ = 175 °C - - -150 VGS = -4.5 V VDS ≥ -5 V -30 - - VGS = -4.5 V ID = -14 A - VGS = -4.5 V ID = -14 A, TJ = 125 °C - - 0.00900 VGS = -4.5 V ID = -14 A, TJ = 175 °C - - 0.01100 VGS = -2.5 V ID = -13 A - 0.00650 0.01000 VGS = -1.8 V ID = -12 A - 0.00940 0.01430 VDS = -6 V, ID = -10.5 A V nA μA A 0.00510 0.00832 - 54 - - 7500 11 000 Ω S Dynamic b Input capacitance Ciss Output capacitance Coss - 2800 4200 Reverse transfer capacitance Crss - 2400 3600 Total gate charge c Qg - 101 151 Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay Qgs Fall time c Source-Drain Diode Ratings and VGS = -4.5 V VDS = -6 V, f = 1 MHz VDS = -6 V, ID = -10.5 A Qgd Rg f = 1 MHz td(on) tr time c VGS = 0 V td(off) VDD = -6 V, RL = 15 Ω ID ≅ -10.5 A, VGEN = -4.5 V, Rg = 6 Ω tf pF - 15 - - 45 - nC 1.1 2.2 3.2 - 31 42 - 168 224 - 310 412 - 283 376 - - -100 A - -0.8 -1.2 V Ω ns Characteristics b Pulsed current a ISM Forward voltage VSD IF = -10.5 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. C, 23-Apr-2021 Document Number: 66897 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4153EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 5 V thru 2 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 VGS = 1.5 V 10 30 TC = 25 °C 20 10 TC = 125 °C TC = - 55 °C VGS = 1 V 0 0 0 3 6 9 12 15 0 1 VDS - Drain-to-Source Voltage (V) 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) 5 Transfer Characteristics Output Characteristics 6 TC = 25 °C 4 2 3 4 VGS - Gate-to-Source Voltage (V) 2 TC = 125 °C TC = - 55 °C TC = 25 °C 60 40 TC = 125 °C 20 TC = - 55 °C 0 0 0 1 1.5 2 2.5 0 3 VGS - Gate-to-Source Voltage (V) 6 9 ID - Drain Current (A) 12 15 Transconductance Transfer Characteristics 12000 0.025 10000 0.020 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 0.015 VGS = 1.8 V 0.010 VGS = 2.5 V 0.005 Ciss 8000 6000 4000 Coss 2000 VGS = 4.5 V Crss 0 0.000 0 8 16 24 ID - Drain Current (A) 32 On-Resistance vs. Drain Current S21-0375-Rev. C, 23-Apr-2021 40 0 3 6 9 VDS - Drain-to-Source Voltage (V) 12 Capacitance Document Number: 66897 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4153EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.5 5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10.5 A VDS = 6 V 4 3 2 1 0 0 30 60 90 ID = 14 A 1.3 1.1 VGS = 4.5 V 0.9 0.7 0.5 - 50 - 25 120 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 100 0.05 TJ = 150 °C 0.04 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) VGS = 2.5 V 1 TJ = 25 °C 0.1 0.01 0.03 0.02 TJ = 150 °C 0.01 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage - 15 1.0 VDS - Drain-to-Source Voltage (V) ID = 1 mA VGS(th) Variance (V) 0.7 ID = 600 μA 0.4 ID = 2 mA 0.1 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0375-Rev. C, 23-Apr-2021 125 150 175 - 16 - 17 - 18 - 19 - 20 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Breakdown Voltage vs. Junction Temperature Document Number: 66897 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4153EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 1 ms 10 1 10 ms Limited by RDS(on)a 100 ms 1 s, 10 s, DC 0.1 0.01 0.01 TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. C, 23-Apr-2021 Document Number: 66897 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4153EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 84 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66897. S21-0375-Rev. C, 23-Apr-2021 Document Number: 66897 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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